Application Briefs

GaN technology is changing the way we live and challenging power systems design engineers to incorporate the high performance of gallium nitride FETs and ICs into their next generation power system designs.

Find out more about applications using EPC eGaN® technology by reading the application briefs listed below:

面向无线电源应用的氮化镓场效应晶体管(eGaN®)及集成电路 (AB001)

无数由电池供电的设备已经渗透进日常生活里。无线能量传输的技术可以远距离驱动这些设备,并且对设备进行充电。

面向包络跟踪应用的eGaN FET 及集成电路 (AB002)

包络跟踪是一种电源技术,可改善射频功率放大器的能效,因为它可以追踪所需功率,有别于目前的固定功率系统。对于手机来说,包络跟踪技术可以支持更长通话时间;而对于基站来说,它可使得基站能够采用体积更小、成本更低的放大器,使得耗电量可以更低及营运成本更低。

面向D类音频放大器应用的氮化镓场效应晶体管(eGaN FET) (AB003)

音频放大器所播放的音质受到功率晶体管的特性所影响,我们用总谐波失真(THD)、阻尼系数(DF)及交互调变失真(IMD) 来测量。

面向基于LiDAR 技术的应用的氮化镓场效应晶体管 (eGaN FET) (AB005)

光学遥感技术 (LiDAR) 使用镭射脉冲快速制成三维图像或为周围环境制作电子地图。

面向网络负载点转换器的eGaN FET 及集成电路 (AB006)

由于市场对小型、高效、具备快速瞬态响应性能的负载点(POL)转换器的需求日益增加,我们需要更快速及更高效的功率开关器件。

面向扩增实境应用的氮化镓场效应晶体管(eGaN FET)及集成电路 (AB008)

光学遥感技术(LiDAR)在扩增实境(augmented reality)应用可以构建三维图像或为周围环境制作电子地图。

面向48 V降压转换器的eGaN FET及集成电路 (AB009)

数据中心消耗大量的电能,它们的功耗高达数兆瓦(megawatt)至数十兆瓦。现今的数据中心的功率转换设计专注于改善能源效率及降低营运成本。

eGaN FETs and ICs for Medical Technology (AB010)

Resolution is a critical attribute of all medical imaging devices, such as sonograms, CAT scans, and MRI. eGaN FETs and ICs increase the speed and precision with which imaging equipment can conduct scanning measurements. The small size and efficiency of eGaN® FETs improves resolution of data collected, while lowering operating power resulting in faster imagery.

面向DC/DC轉換的eGaN® FET及積體電路 (AB013)

採用氮化鎵場效應電晶體(eGaN FET)例如EPC2045,可實現最小型化、最具成本效益及最高效的48 V – 12 V非隔離型轉換器,適用於高效運算及電信應用。

面向高可靠性功率解决方案的eGaN FET及IC (AB015)

在严峻环境工作的功率转换器必需是耐辐射,从而减少由辐射引致的器件损坏及失效情况,包括宇航、高空飞行及高可靠性军事应用。

針對面向汽車DC/DC電源轉換的氮化鎵場效應電晶體及積體電路 (AB016)

車載應用受惠於增強型氮化鎵(eGaN)器件的優勢 - 更高效、更快速開關、更小型化及成本更低。目前已經有多種新興應用採用氮化鎵元件,其性能比採用老化的矽MOSFET更高,例如汽車所採用的氮化鎵基48 V輸入電源轉換應用。

面向無刷直流(BLDC)馬達的氮化鎵場效應電晶體(eGaN FET)及積體電路 (AB017)

Key applications including e-mobility, cobots and robots, DC servo drives, drones, and automotive use GaN devices to enable smaller, lighter, and more precise motor drives.

面向無人機的eGaN FET和IC (AB018)

氮化鎵技術為工業用無人機的多種應用提供了高效的解決方案。 該技術可提高工業用無人機所使用的馬達控制器、DC/DC電源和光達/飛行時間系統的性能、縮小其尺寸、減輕重量和節省成本。

eGaN FETs and ICs for USB-C PD Quick Chargers (AB019)

USB-C PD quick chargers and adaptors for smart phones and laptops require the highest power density for fast charging and small size. eGaN FETs and ICs enable miniaturization, very high efficiency, and excellent thermal characteristics.

eGaN FETs and ICs for Synchronous Rectification (AB020)

Key applications including Synchronous Rectification, AC/DC for multi-kW Servers, Netcom and Telecom systems, Adaptors and SMPS for LED and OLED TV, home theater systems, gaming & graphic PCs, Computing, LED lighting

eGaN FETs and ICs for 1 kW – 3 kW Universal Input Power Factor Correction (PFC) (AB021)

Why GaN for PFC? High efficiency (greater than 99%), Small size, Low harmonic distortion, 4-level flying capacitor multi-level (FCML) totem-pole bridgeless PFC topology utilizes 200 V GaN devices

Wireless power applications
Envelope tracking applications
LiDAR applications
Data center power applications
Motor Drive Applications