The EPC9017 development board features the 100 V EPC2001 enhancement mode (eGaN®) field effect transistor (FET) operating up to a 20 A maximum output current in a half bridge configuration with onboard gate drives. The purpose of this development board is to simplify the evaluation process of the EPC2001 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.