EPC’s inverter reference design is based around a GaN chip to reduce powertrain sizes

E-mobility Engineering
September, 2022
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New Motor Drive Center of Excellence (CoE) design center in Turin, Italy, to help customers exploit the power of GaN for growing motor drive applications

EL SEGUNDO, Calif.— September, 2022 —   EPC has opened a new design application center near Turin, Italy, to focus on growing motor drive applications based on GaN technology in the e-mobility, robotics, drones, and industrial automation markets.  The specialist team will support customers in accelerating their design cycles and define future Integrated Circuits for power management with state-of-the art equipment to test applications from 400 W to 10’s of kW.

GaN FETs in thermally enhanced QFN packages offer higher performance and smaller solution size for high power density applications, including DC-DC conversion, AC/DC chargers, solar optimizers and microinverters, motor drives, and Class D Audio

Power Electronics News
September, 2022
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宜普电源转换公司(EPC)新推100 V、3.8 mΩ 的氮化镓场效应晶体管EPC2306，为高功率密度应用提供性能更高和更小的解决方案，包括 DC/DC 转换、AC/DC 充电器、太阳能优化器和微型逆变器、电机驱动器和D类音频放大器等应用。

宜普电源转换公司是增强型氮化镓(eGaN^®)功率FET和IC领域的全球领导者，新推100 V、采用耐热增强型QFN封装的EPC2306，用于高密度计算应用的48 V DC/DC转换、电动汽车和机器人的48 V BLDC 电机驱动器、太阳能优化器和微型逆变器，以及 D 类音频放大器。

BRC Solar公司的新型M500/14功率优化器采用EPC公司的100 V 氮化镓器件（EPC2218)，它的占板面积小，可实现更高的频率和额定功率。

BRC Solar公司凭借其功率优化器彻底改变了光伏市场的发展、提高了光伏电站和系统的发电量和性能。其新一代M500/14 功率优化器采用了宜普电源转换公司的EPC2218（100 V的场效应晶体管），实现了更高的功率密度，因为GaN FET的低功耗和小尺寸使关键负载电路更加紧凑。而GaN FET的小寄生电容和电感可实现没有杂讯的开关和良好的EMI特性。GaN FET的另一个优点是没有反向恢复损耗。

宜普电源转换公司（EPC）推出ePower™功率级集成电路，它集成了整个半桥功率级，可在1 MHz工作时实现高达35 A的输出电流，为高功率密度应用提供更高的性能和更小型化的解决方案，包括DC/DC转换、电机驱动和D类音频放大器等应用。

宜普电源转换公司（EPC）宣布推出100 V、35 A的集成电路，专为48 V DC/DC转换而设计，用于高密度计算应用和面向电动汽车、机器人和无人机的48 V BLDC电机驱动器。

EPC23102 eGaN集成电路可实现100 V的最大耐受电压、实现高达35 A的负载电流和高于1 MHz的开关速度。

宜普电源转换公司(EPC)扩展了其耐辐射氮化镓产品系列，新推的100 V产品用于要求严格的机载和其他高可靠性环境下的电源转换解决方案，进一步为这个产品系列添加第五个成员。

EPC公司宣布推出100 V、7 mΩ、160 A_Pulsed的耐辐射GaN FET EPC7004。尺寸小至6.56 mm²，其总剂量等级大于1 Mrad，线性能量转移（LET）的单一事件效应（SEE）抗扰度为85 MeV/(mg/cm²)。EPC7004与EPC7014、EPC7007、EPC7019和EPC7018器件都是采用芯片级封装，这与其他商用的氮化镓场效应晶体管（eGaN^® FET）和IC相同。封装器件将由EPC Space提供。

宜普电源转换公司(EPC)扩展了其耐辐射氮化镓产品系列，新推的100 V器件用于要求严格的机载和其他高可靠性环境的电源转换解决方案，与目前市场上的任何100 V耐辐射晶体管相比，它具有最低的导通电阻。

EPC公司宣布推出100 V、3.9 mΩ、345 A_Pulsed的耐辐射GaN FETEPC7018，尺寸为13.9 mm²，其总剂量等级大于1 Mrad，线性能量转移（LET）的单一事件效应（SEE）抗扰度为85 MeV/(mg/cm²)。与EPC7014、EPC7007和EPC7019耐辐射产品系列相同，都是采用芯片级封装。封装器件由EPC Space.提供。

宜普电源转换公司（EPC）新推线上论坛，为工程师提供产品信息、答疑解难和分享採用氮化镓技术的应用现状和发展趋势。

宜普电源转换公司宣布新推"GaN Talk支持论坛"，为工程师提供产品信息和技术支持，从而了解氮化镓（GaN）技术的应用现状和发展趋势。该论坛专为工程师、工程专业学生和所有氮化镓技术爱好者而设，为用户答疑解难和提供互相交流的平台。提问可以用主题类别、热门话题或最新帖子搜索。除了提问外，用户还可以在论坛使用帖子中的"分享"链接参看所有之前的提问和反馈。

Join host Dr. Sanjay Gupta and guest Alex Lidow, CEO of Efficient Power Conversion – or EPC – in episode 5 as they explore the ways GaN is advancing the future of wireless charging. As wireless power increases in maturity and adoption, the industry needs solutions that improve performance, efficiency, and user experience. Gallium Nitride is essential to enabling higher power applications than can be achieved with traditional silicon, opening the door for charging multiple devices and more diverse devices, such as laptops, drones, robots, power tools, eBikes, and industrial equipment. Wireless charging circuits employing GaN transistors are also five to ten times smaller than silicon devices able to handle the same power levels.

AirFuel Alliance
May, 2022
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基于氮化镓器件的逆变器参考设计EPC9173无论是在尺寸、性能、续航里程、精度和扭矩方面，优化了电机系统且简化设计和加快产品推出市场的时间。我们可以把这种微型逆变器放进电机外壳中，从而把电磁干扰减到最小、实现最高的功率密度和最轻的重量。

宜普电源转换公司（EPC）宣布推出EPC9173，它是一款三相无刷直流电机驱动逆变器，采用具备嵌入式栅极驱动器功能的EPC23101 eGaN^®集成电路和一个3.3 mΩ导通电阻的浮动功率氮化镓场效应晶体管。EPC9173在20 V和85 V之间的输入电源电压下工作，峰值电流可高达50 Apk（35 A_RMS）。这种电压范围和功率水平使该解决方案成为各种电机驱动应用的理想器件，包括电动自行车、滑板车、城市汽车、无人机和机器人。

宜普电源转换公司（EPC）新推40 V、1.1 mΩ的氮化镓场效应晶体管（EPC2066），为设计工程师提供比硅MOSFET更小、更高效的器件，用于高性能、占板面积受限的应用。

全球行业领先供应商宜普电源转换公司 为业界提供增强型氮化镓（eGaN^®）功率场效应晶体管和集成电路，新推40 V、典型值为0.8 mΩ的EPC2066氮化镓场效应晶体管，为客户提供更多可选的低压氮化镓晶体管和可以立即发货。

Easy Engineering媒体采访了宜普电源转换公司（EPC）的市场营销总监Renee Yawger，了解目前氮化镓器件应用的情况和氮化镓技术的未来。

Easy Engineering
2022年5月
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Sensitron introduces the SPG025N035P1B GaN half-bridge module using the 350 V EPC2050 eGaN^® FET from Efficient Power Conversion (EPC)

EL SEGUNDO, Calif.— May 2022, Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s 350 V, EPC2050 GaN FET, Sensitron was able to reduce the size of their solution by 60% while also improving the module’s already excellent junction-to-case thermal conduction. The SPG025N035P1B from Sensitron is a high-power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500 khz. Rated at 20 A, the module can be used to control over 3 kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10" x 0.70" x 0.14") allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.

One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status quo. The more conservative voices tend to cite older information that, given the fast change of trajectory that occurs at a tipping point, can lead to poor decisions for new designs. In the world of GaN power devices the tipping point occurred in the past two years when the rate of new GaN-based designs started to double year-on-year, and the legacy MOSFET designs started to face critical supply shortages due to their finely tuned, but less flexible supply chains. GaN devices, on the other hand, have remained in stock at most major distributors due to their relatively new and flexible supply chains utilizing older silicon foundries, but affording these foundries a new and vibrant future. In this article we will address some of the common misconceptions still showing up in articles and at conferences, usually presented by advocates of the status quo.

Bodo’s Power Systems
May, 2022
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宜普电源转换公司(EPC)扩展了其耐辐射氮化镓产品系列，新推的200 V产品用于要求严格的机载和其他高可靠性环境下的电源转换解决方案，它具备超低的导通电阻和极小型化等优势。

EPC公司宣布推出200 V、25 mΩ、80 A_Pulsed的耐辐射GaN FET EPC7007。尺寸小至5.76 mm²，其总剂量等级大于1 Mrad，线性能量转移（LET）的单一事件效应（SEE）抗扰度为85 MeV/(mg/cm²)。与商用eGaN FET和IC系列相同，采用芯片级封装。 封装器件将由EPC Space提供。

氮化镓场效应晶体管和集成电路的用户现在有了一个工具来确定应用中需要的降额和降额设计中应考虑的因素。宜普公司开发了一个基于第一原理的物理模型，以解释氮化镓晶体管在硬开关时，导通电阻如何上升。本文提供了两个同步整流应用实例的演示。

Electronic Specifier
2022年5月
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EPC公司的氮化镓专家将在PCIM 欧洲展会分享多项现场演示以阐释卓越的氮化镓技术如何为许多应用的功率转换带来革命性突破，包括计算、通信和e-mobility。

宜普电源转换公司（EPC）团队将于5月10日至12日在德国纽伦堡举行的PCIM 欧洲2022展览进行多场关于氮化镓技术的演讲和专业研讨会，详请如下。 此外，我们将在展位（9号厅、113号展台）展出采用新型eGaN^®FET 和 IC的客户的最新终端产品。

In this video, Alex Lidow shares thoughts on his career, his family, his time at university, and his Ph.D. course, but also about energy trends, the shift to GaN that the power electronics ecosystem is ready to make, and the following weekend, with the finest wine!

Power Electronics News
April 22, 2022
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The EPC2050 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor. It has a drain-source voltage of over 350 V, a drain-source on-resistance of 55 milliohms, and a gate threshold voltage of 1.3 V.

everything PE
April, 2022
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