By Jason Zhang, Vice President of DC-DC Marketing and System Engineering, EPC
Power delivery has become a critical design challenge in AI data centers. As GPU power requirements continue to increase, designers face growing demands to improve power conversion efficiency while reducing converter size and thermal losses. These requirements are driving the adoption of wide-bandgap semiconductor technologies, particularly gallium nitride (GaN), in the intermediate bus conversion stages of modern AI power architectures.
In this context, Efficient Power Conversion (EPC) has introduced the EPC2378, a 25 V GaN FET, and the EPC2370, an 18 V GaN FET. Both are part of the company's latest Gen 7 product family, optimized for secondary-side synchronous rectification in high-current DC-DC converters. The EPC2378 features a typical RDS(on) of 410 µΩ and a gate charge of 34 nC, while the EPC2370 offers a typical RDS(on) of 280 µΩ and a gate charge of 26 nC. Both devices are housed in a compact, thermally enhanced 3.3 × 3.3 mm PQFN package with an exposed substrate that supports dual-sided cooling. In addition to minimizing conduction losses, the devices are designed with low gate charge to reduce switching losses at a switching frequency of 1 MHz, improving overall efficiency and power density.
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