By Maurizio Di Paolo Emilio, Marcom Director, EPC
Gallium nitride (GaN) power technology is entering a new phase. After gaining traction in fast chargers, automotive power conversion, and other higher-voltage applications, GaN devices rated at 40 V and below are opening a new competitive front against silicon MOSFETs. According to Paul Pickering, Research Director at Omdia, low-voltage GaN could become one of the most disruptive developments in power semiconductors over the next several years.
Speaking on the GaN Talk podcast, Paul Pickering, Omdia Research Director, explained that the market opportunity is particularly significant because low-voltage GaN directly targets applications traditionally dominated by silicon. “Low-voltage GaN below 40 volts has the potential to be one of the most disruptive developments we've seen in recent years,” he said.
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