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eGaN® FET-Silicon Power Shoot-Out Part 10: High Frequency Resonant Converters
Posted 2012年9月1日
The advantages provided by eGaN FETs in hard switching isolated and non-isolated applications have been addressed previously. Here, we demonstrate the ability of the eGaN FET to improve efficiency and output power density in a soft switching application, compared to what is achievable with existing power MOSFET devices.
By David Reusch, Ph.D., Director of Applications, EPC
Power Electronics Technology
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