GaNの話

This technical article analyzes the design and performance of the EPCSC401 demonstration board, evaluating its radiation tolerance, thermal efficiency, and high-frequency switching topology.

Aerospace power system design faces a growing demand for power density and efficiency that exceeds the physical limits of traditional silicon MOSFETs, whose thermal losses and restricted switching frequencies heavily penalize payload weight. Consequently, GaN technology emerges as a disruptive necessity for NewSpace architectures, thanks to its wider bandgap and superior electron mobility. The EPCSC401 demonstration board facilitates this transition, allowing engineers to evaluate synchronous GaN power stages under extreme radiation conditions.