11 12, 2019
Alex Lidow, Ph.D., CEO and Co-founder
シリコンの時代は、十分すぎるほど長過ぎます。若くてより適切な挑戦者が半導体材料の主役を引き継ぐ時です。
5 04, 2017
Gallium nitride (GaN) power transistors designed for efficient power conversion have been in production for seven years. New markets, such as light detection and ranging, envelope tracking, and wireless charging, have emerged due to the superior switching speed of GaN. These markets have enabled GaN products to achieve significant volumes, low production costs, and an enviable reliability reputation. All of this provides adequate incentive for the more conservative design engineers in applications such as dc–dc converters, ac–dc converters, and automotive to start their evaluation process. So what are the remaining barriers to the conversion of the US$12 billion silicon power metal–oxide–semiconductor field-effect transistor (MOSFET) market? In a word: confidence. Design engineers, manufacturing engineers, purchasing managers, and senior management all need to be confident that GaN will provide benefits that more than offset the risk of adopting a new technology. Let’s look at three key risk factors: supply chain risk, cost risk, and reliability risk.
設計例について、質問がありますか? GaNのエキスパートに聞く
GaN FEとIC
評価基板
eGaN FETの電力変換向けに拡張するエコシステム (How2AppNote005)
eGaN FETベースのパワー段を最適なレイアウトで設計する方法 (How2AppNote007)