GaN Wine Lounge. GaN stories, insights, and people

GaNワイン・ラウンジ

GaNワイン・ラウンジは、当社のユーザー、学術パートナー、編集者、そしてEPCのチーム・メンバーと、仮想のワイン・グラスを囲みながら、GaNをはじめとするさまざまな話題について語り合うリラックスしたビデオ会話シリーズです。カジュアルでフレンドリーな雰囲気の中で、実社会での経験、学んだ教訓、そして斬新なアイデアを共有します。短いラボ・エピソードでは、実験の舞台裏やEPCソリューションの実際の応用例も含まれます。共に繋がりを築き、コラボレーションを促し、GaNの未来を形作る人々と技術を称えましょう。

A New Era of GaN Power: How EPC’s GaN Leads the Way with PCIM Asia Coming

A New Era of GaN Power: How EPC’s GaN Leads the Way with PCIM Asia Coming

In this episode, Alex Lidow explains why power is the real bottleneck in AI. He outlines how GaN reshapes data center power delivery and motor drives for robots and autonomous machines. Ahead of PCIM Asia, he previews Gen 8 for ultra‑efficient point-of-load conversion and Trinity for highly integrated motor control, supported by EPC’s reference designs and tools.
EPC at PCIM Asia: GaN Leadership for Future Data Centers and Humanoids

EPC at PCIM Asia: GaN Leadership for Future Data Centers and Humanoids

This episode features EPC’s Nick Cataldo on the company’s role at PCIM Asia, where Gen 8 GaN and Trinity motor control will be demonstrated. He explains GaN’s advantages over silicon, EPC’s long-term reliability data, and why Asian AI and robotics markets are pivotal for next-generation power and motion control designs.
How GaN is Challenging Silicon: Insights from TDK’s Ralf Higgelke at PCIM

How GaN is Challenging Silicon: Insights from TDK’s Ralf Higgelke at PCIM

In this GaN Wine Lounge episode at PCIM Nuremberg, EPC’s Maurizio Di Paolo Emilio interviews TDK’s Ralf Higgelke about his journey from power supply design engineer to technology journalist and corporate communications leader. Higgelke explains how this background gives him a holistic view of power electronics and wide bandgap technologies. He argues that GaN and silicon carbide are complementary but that GaN is rapidly encroaching on higher-power domains, highlighting applications in AI data centers, robotics, and future solid-state transformers.
QSpice Meets GaN: Accurate Models for Real-World Designs

QSpice Meets GaN: Accurate Models for Real-World Designs

At PCIM Europe in Nuremberg, Maurizio Di Paolo Emilio interviewed Mike Engelhardt, inventor of QSPICE, about the latest advances in GaN power electronics. They discussed how GaN enables faster, more efficient power designs, common simulation pitfalls, and the importance of accurate device models for reliable circuit design. Mike also previewed the 2026 GaN FET model for QSPICE and shared insights into future integration with test equipment and vector network analyzers.
From Room Temperature to 4 Kelvin: EPC’s GaN Journey for Quantum Computing

From Room Temperature to 4 Kelvin: EPC’s GaN Journey for Quantum Computing

This interview with Shengke Zhang, Vice President of Reliability at EPC, explores the development of a fully functional GaN power converter operating at 4 Kelvin. Zhang explains why 4 K is a critical temperature for superconducting and quantum computing research and why GaN HEMTs outperform silicon MOSFETs in cryogenic conditions. He details key engineering challenges, especially wiring and peripherals, and outlines future work on monolithic power stages, system-level reliability for AI, and short-circuit robustness in low-voltage GaN devices.
Advances in GaN Power Electronics: A System‑Level and Multidisciplinary Design Perspective

Advances in GaN Power Electronics: A System‑Level and Multidisciplinary Design Perspective

Gallium nitride (GaN) is reshaping power electronics from USB‑C chargers and telecom supplies to emerging automotive and industrial applications. Building on the collaboration between Politecnico di Torino and EPC, this session highlights the shift from component‑level to system‑level design, where efficiency, reliability, cost, and scalability are co‑optimized. We discuss GaN motor control, reduction of EMI and motor aging, AI‑aided 3D design, digital twins, predictive maintenance, and cryogenic operation, illustrating how intelligent, highly integrated converters will enable the next wave of innovation.
GaN vs. Silicon: Powering the Next Wave of AI Servers and Humanoids 2026年7月23日0

GaN vs. Silicon: Powering the Next Wave of AI Servers and Humanoids

This interview with Alex Lidow, CEO of EPC, explores how gallium nitride (GaN) is transforming power architectures in AI data centers, humanoid robots, and space systems. Lidow explains the shift to 800 V DC buses, challenges of megawatt racks, and the impact of Gen 7 and Gen 8 GaN on low‑voltage, high‑current conversion for advanced GPUs. He also addresses reliability misconceptions, thermomechanical design practices, and regional adoption trends across China, Japan, South Korea, and Taiwan.
GaN’s Maturity and Future: A Conversation with EPDT Editor Mike Green 2026年7月17日0

GaN’s Maturity and Future: A Conversation with EPDT Editor Mike Green

Gallium nitride (GaN) has moved from emerging technology to a multibillion‑dollar, rapidly scaling market. In this interview from the PCIM show in Nuremberg, EPC’s Maurizio Di Paolo Emilio talks with EPDT editor Mike Green about GaN’s maturation, its competitive dynamics with silicon, and key high‑value applications in AI data centers, automotive lidar, robotics, and space. Green highlights EPC’s role, technology advantages, and roadmap, and shares personal insights on his passions beyond publishing and the pioneers who shaped semiconductors.
Scaling AI Power with GaN: Inside the Renesas–EPC Alliance 2026年7月10日0

Scaling AI Power with GaN: Inside the Renesas–EPC Alliance

This session explores how the second‑source and licensing agreement between Renesas and EPC is accelerating GaN adoption in AI data centers, automotive, robotics, and industrial applications. The speakers examine the shift to new “grid‑to‑core” 800 V DC architectures and show how low‑voltage GaN enables higher efficiency and power density. They discuss multi‑sourcing strategies, internal wafer fabrication for low‑voltage GaN, and the crucial role of advanced packaging and thermo‑mechanical reliability. The panel closes with a clear outlook on how this partnership will shape the next generation of GaN‑based power systems.

1234