GaNワインラウンジ

From Room Temperature to 4 Kelvin: EPC’s GaN Journey for Quantum Computing

This interview with Shengke Zhang, Vice President of Reliability at EPC, explores the development of a fully functional GaN power converter operating at 4 Kelvin. Zhang explains why 4 K is a critical temperature for superconducting and quantum computing research and why GaN HEMTs outperform silicon MOSFETs in cryogenic conditions. He details key engineering challenges, especially wiring and peripherals, and outlines future work on monolithic power stages, system-level reliability for AI, and short-circuit robustness in low-voltage GaN devices.

Advances in GaN Power Electronics: A System‑Level and Multidisciplinary Design Perspective

Gallium nitride (GaN) is reshaping power electronics from USB‑C chargers and telecom supplies to emerging automotive and industrial applications. Building on the collaboration between Politecnico di Torino and EPC, this session highlights the shift from component‑level to system‑level design, where efficiency, reliability, cost, and scalability are co‑optimized. We discuss GaN motor control, reduction of EMI and motor aging, AI‑aided 3D design, digital twins, predictive maintenance, and cryogenic operation, illustrating how intelligent, highly integrated converters will enable the next wave of innovation.

GaN vs. Silicon: Powering the Next Wave of AI Servers and Humanoids

This interview with Alex Lidow, CEO of EPC, explores how gallium nitride (GaN) is transforming power architectures in AI data centers, humanoid robots, and space systems. Lidow explains the shift to 800 V DC buses, challenges of megawatt racks, and the impact of Gen 7 and Gen 8 GaN on low‑voltage, high‑current conversion for advanced GPUs. He also addresses reliability misconceptions, thermomechanical design practices, and regional adoption trends across China, Japan, South Korea, and Taiwan.

GaN’s Maturity and Future: A Conversation with EPDT Editor Mike Green

Gallium nitride (GaN) has moved from emerging technology to a multibillion‑dollar, rapidly scaling market. In this interview from the PCIM show in Nuremberg, EPC’s Maurizio Di Paolo Emilio talks with EPDT editor Mike Green about GaN’s maturation, its competitive dynamics with silicon, and key high‑value applications in AI data centers, automotive lidar, robotics, and space. Green highlights EPC’s role, technology advantages, and roadmap, and shares personal insights on his passions beyond publishing and the pioneers who shaped semiconductors.

Scaling AI Power with GaN: Inside the Renesas–EPC Alliance

This session explores how the second‑source and licensing agreement between Renesas and EPC is accelerating GaN adoption in AI data centers, automotive, robotics, and industrial applications. The speakers examine the shift to new “grid‑to‑core” 800 V DC architectures and show how low‑voltage GaN enables higher efficiency and power density. They discuss multi‑sourcing strategies, internal wafer fabrication for low‑voltage GaN, and the crucial role of advanced packaging and thermo‑mechanical reliability. The panel closes with a clear outlook on how this partnership will shape the next generation of GaN‑based power systems.

The Power of GaN for Motor Drives

In this interview, WBG TechnoBite founder Qian Luo talks with EPC's Chen Hu about why GaN is becoming a game-changer for motor drives. They explore how GaN's fast switching, high efficiency, and compact integration enable smaller, quieter, and more precise motor systems—from industrial automation and robotics to e-mobility and appliances. The conversation also covers design trade-offs, thermal benefits, and how China's ecosystem is accelerating GaN adoption, offering engineers a practical look at where wide-bandgap motor drive technology is headed.

2026年6月24日0

Nexperia & EPC on GaN: Performance, Reliability, and Industry Collaboration

At the GaN Wine Lounge at PCIM Nuremberg, Maurizio Di Paolo Emilio moderated a discussion with Alex Lidow, CEO and Co-Founder of EPC, and Roberto Crisafulli, Head of GaN Marketing and Applications at Nexperia. They explained how GaN is rapidly displacing silicon MOSFETs in AI power delivery, motor drives, robotics, and data centers due to its higher efficiency, power density, and switching frequency. They also stressed the need for ecosystem collaboration and proper qualification standards, noting that GaN reliability is now well understood, enabling mainstream adoption.

2026年6月19日0

Advancing Power Electronics: EPC’s GaN with Microchip’s Digital Controllers

This video features Maurizio Di Paolo Emilio, Marcom Director at EPC, interviewing Alex Lidow, CEO of EPC, and Fanie Duvenhage, Senior Vice President at Microchip Technology, about their collaboration on a 5 kW PFC converter. They discuss how EPC’s GaN devices and Microchip’s advanced digital control enable multilevel topologies that deliver higher power density, improved efficiency, and compact form factors for AI and other demanding power applications. The speakers also share key lessons from their joint projects and outline future directions in low‑voltage, high‑frequency GaN and high‑voltage wide‑bandgap systems.

2026年6月5日0

GaNパワー設計の内側：回路構成、磁気部品、信頼性に関するFinepowerとEPC

このビデオでは、Maurizio Di Paolo Emilioが、販売代理店の独Finepowerのパワー・エレクトロニクスのエキスパートであるTobias Fuhr氏と、EPCの窒化ガリウム（GaN）技術が、いかに現代の電力変換を変えつつあるかについて話しました。シリコンではなく、EPCのeGaN FETを採用すべき時期や理由、GaNがコンバータの回路構成や磁気部品の設計に与える影響、さらには自動車や航空宇宙機器からAIデータセンターに至る実際のアプリケーションにおいて、効率、信頼性、電力密度にどのような意味があるかについて議論しました。双方向GaNや、マルチレベル・アーキテクチャ、コンバータの今後の展望についても考察します。

GaNワイン・ラウンジ