EPC社の特許

EPC社は、EPC社のFETおよびICがパワーMOSFETやLDMOSのソリューションに広く置き換わることを可能にする独自のエンハンスメント・モードGaN技術を開発しています。 EPC社は、中国、日本、韓国、台湾、および米国で取得した特許を含む包括的なIPポートフォリオを構築し、拡大し続けています。

発行日 国／地域 特許番号 タイトル  
11/08/2022 US 11496134 DIFFERENTIAL ACTIVATED LATCH FOR GaN BASED LEVEL SHIFTER
10/19/2022 Republic of Korea 10-2458233 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
06/08/2022 Germany 3596835 LARGE AREA SCALABLE HIGHLY RESONANT WIRELESS POWER COIL
06/08/2022 European Patent Office 3596835 LARGE AREA SCALABLE HIGHLY RESONANT WIRELESS POWER COIL
05/26/2022 Japan 7080185 ENHANCEMENT MODE FET GATE DRIVER IC
04/29/2022 China ZL201780033921.X. MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHODS FOR FABRICATING SAME
03/01/2022 Taiwan I756906 FLYING CAPACITOR CHARGING METHOD FOR MULTILEVEL CONVERTERS
01/31/2022 Japan 7017525 MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHOD TO FABRICATE THE SAME
12/21/2021 China ZL201880030156.0 LARGE AREA SCALABLE HIGHLY RESONANT WIRELESS POWER COIL
12/10/2021 Germany DE112017006120 BOOTSTRAP CAPACITOR OVER-VOLTAGE MANAGEMENT CIRCUIT FOR GaN TRANSISTOR BASED POWER CONVERTERS
12/01/2021 Taiwan I748233 LATERAL POWER DEVICE WITH REDUCED ON-RESISTANCE
12/01/2021 Italy 3205021 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
12/01/2021 Germany 3205021 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
12/01/2021 European Patent Office 3205021 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
11/05/2021 Japan 6983355 CURRENT PULSE GENERATOR WITH INTEGRATED BUS BOOST CIRCUIT
11/01/2021 Taiwan I744713 MAGNETIC FIELD PULSE CURRENT SENSING FOR TIMING-SENSITIVE CIRCUITS
10/21/2021 Germany 112014004142.4 HIGH EFFICIENCY VOLTAGE MODE CLASS D TOPOLOGY
10/11/2021 Taiwan I742403 POWER PULSE GENERATOR WITH INTEGRATED BUS BOOST CIRCUIT
09/30/2021 Hong Kong 1242058 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
09/17/2021 Korea 10-2306073 CURRENT PULSE GENERATOR WITH INTEGRATED BUS BOOST CIRCUIT
09/14/2021 US 11121245 FIELD PLATE STRUCTURES WITH PATTERNED SURFACE PASSIVATION LAYERS AND METHOD OF MANUFACTURING THEREOF
08/24/2021 US 11101349 LATERAL POWER DEVICE WITH REDUCED ON-RESISTANCE
07/01/2021 Taiwan I732280 CASCADED BOOT-STRAPPNG GaN POWER SWITCH AND DRIVER
06/29/2021 US 11050339 INTEGRATED CIRCUIT WITH MULTIPLE GALLIUM NITRIDE TRANSISTOR SETS
06/15/2021 US 11038503 GaN DRIVER USING ACTIVE PRE-DRIVER WITH FEEDBACK
06/10/2021 Germany 112013006313 PARASITIC INDUCTANCE REDUCTION CIRCUIT BOARD LAYOUT DESIGNS FOR MULTILAYERED SEMICONDUCTOR DEVICES
05/25/2021 US 11019718 LOW PARASITIC INDUCTANCE STRUCTURE FOR POWER SWITCHED CIRCUITS
04/30/2021 Korea 10-2249390 INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME
04/13/2021 China ZL01780073908.7 BOOTSTRAP CAPACITOR OVER-VOLTAGE MANAGEMENT CIRCUIT FOR GaN TRANSISTOR BASED POWER CONVERTERS
04/11/2021 Taiwan I724559 MULTI-CHANNEL PULSE CURRENT GENERATOR WITH CHARGING
03/30/2021 Korea 10-2236287 BOOTSTRAP CAPACITOR OVER-VOLTAGE MANAGEMENT CIRCUIT FOR GaN TRANSISTOR BASED POWER CONVERTERS
02/23/2021 US 10931244 COMMON GATE AMPLIFIER WITH HIGH ISOLATION FROM OUTPUT TO INPUT
02/16/2021 Japan 6839280 BOOTSTRAP CAPACITOR OVER-VOLTAGE MANAGEMENT CIRCUIT FOR GaN TRANSISTOR BASED POWER CONVERTERS
02/08/2021 Japan 6835581 INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME
01/26/2021 Korea 10-2210449 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
01/26/2021 US 10901011 MAGNETIC FIELD PULSE CURRENT SENSING FOR TIMING-SENSITIVE CIRCUITS
01/22/2021 China 201580056930.1 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
01/21/2021 Germany 112014003169.0 Isolation Structure in Gallium Nitride Devices and Integrated Circuits
01/21/2021 Taiwan I716980 GaN DRIVER USING ACTIVE PRE-DRIVER WITH FEEDBACK
01/13/2021 Korea 10-2204777 ISOLATION STRUCTURE AND METHOD TO FABRICATE THE SAME IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
01/12/2021 US 10892650 MULTI-COIL LARGE AREA WIRELESS POWER SYSTEM
01/01/2021 Taiwan I715167 GaN BASED FAIL-SAFE SHUT-DOWN OF HIGH-CURRENT DRIVERS
01/01/2021 Taiwan I715249 LEVEL SHIFTER FOR HALF-BRIDGE GaN DRIVER APPLICATIONS
12/14/2020 Korea 10-2193085 METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
12/14/2020 Korea 10-2193086 GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
12/14/2020 Korea 10-2193087 GATE WITH SELF-ALIGNED LEDGE FOR ENHANCEMENT MODE GaN TRANSISTORS
12/08/2020 US 10862337 LARGE AREA SCALABLE HIGHLY RESONANT WIRELESS POWER COIL
12/03/2020 Germany 112014003175B4 METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
12/01/2020 Taiwan I684278 MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHOD TO FABRICATE THE SAME
11/24/2020 US 10847947 GaN LASER DIODE DRIVE FET WITH GATE CURRENT REUSE
11/17/2020 US 10840742 WIRELESS POWER RECEIVER SYNCHRONIZATION DETECTION CIRCUIT
10/22/2020 Germany 11 2014 003 481 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
10/06/2020 US 10797601 CURRENT PULSE GENERATOR WITH INTEGRATED BUS BOOST CIRCUIT
09/29/2020 US 10790811 CASCADED BOOTSTRAPPNG GaN POWER SWITCH AND DRIVER
09/22/2020 US 10784794 GaN FET GATE DRIVER FOR SELF-OSCILLATING CONVERTERS
08/27/2020 Korea 10-2151200 PARASITIC INDUCTANCE REDUCTION CIRCUIT BOARD LAYOUT DESIGNS FOR MULTILAYERED SEMICONDUCTOR DEVICES
08/25/2020 Korea 10-2150007 MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHOD TO FABRICATE THE SAME
08/25/2020 Republic of Korea 10-2150007 MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHOD TO FABRICATE THE SAME
08/18/2020 US 10749514 GaN BASED ADJUSTABLE DRIVER CURRENT CIRCUIT
08/18/2020 US 10749514 GaN BASED ADJUSTABLE DRIVER CURRENT CIRCUIT
08/13/2020 Germany 11 2010 001 560.0 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRONICALLY ISOLATED BACK SURFACE
07/30/2020 Germany 102013202972.1 ENHANCEMENT MODE GaN HEMT DEVICE WITH A GATE SPACER AND METHOD FOR FABRICATING THE SAME
07/28/2020 US 10727834 LEVEL SHIFTER IN HALF BRIDGE GaN DRIVER APPLICATIONS
07/01/2020 Taiwan I698065 LARGE AREA SCALABLE HIGHLY RESONANT WIRELESS POWER COIL
06/09/2020 US 10680589 GAN BASED FAIL-SAFE SHUTDOWN OF HIGH-CURRENT DRIVERS
05/13/2020 Japan 6703983 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
05/06/2020 Korea 10-2109851 ENHANCEMENT MODE FET GATE DRIVER IC
04/28/2020 US 10637456 LOW VOLTAGE DROP CASCADED SYNCHRONOUS BOOTSTRAP SUPPLY CIRCUIT
04/14/2020 US 10622455 ENHANCEMENT-MODE GaN TRANSISTOR WITH SELECTIVE AND NONSELECTIVE ETCH LAYERS FOR IMPROVED UNIFORMITY IN GaN SPACER THICKNESS
03/24/2020 US 10600674 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
03/24/2020 US 10601300 INTEGRATED GALLIUM NITRIDE BASED DC-DC CONVERTER
03/04/2020 Korea 10-2087283 HIGH EFFICIENCY VOLTAGE MODE CLASS D TOPOLOGY
12/11/2019 Taiwan I679687 E-MODE GaN TRANSISTOR WITH SELECTIVE AND NONSELECTIVE ETCH LAYERS FOR IMPROVED UNIFORMITY IN GaN SPACER THICKNESS
12/11/2019 Taiwan I679823 MULTI-COIL LARGE AREA WIRELESS POWER SYSTEM, AMPLIFIER CIRCUIT AND SYNCHRONIZATION CIRCUT
10/22/2019 US 10454472 BOOTSTRAP CAPACITOR OVER-VOLTAGE MANAGEMENT CIRCUIT FOR GaN TRANSISTOR BASED POWER CONVERTERS
09/11/2019 Taiwan I671907 LOW DISTORTION RF SWITCH
06/14/2019 China ZL201480020252.9 ISOLATION STRUCTURE IN GALLIUM NITRIDE DEVICES AND INTERGRATED CIRCUITS
06/13/2019 Korea 10-1991036 ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GAN TRANSISTORS
06/04/2019 US 10312131 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
06/04/2019 US 10312260 GAN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONAL COMPONENTS
06/04/2019 US 10312335 GATE WITH SELF-ALIGNED LEDGE FOR ENHANCEMENT MODE GaN TRANSISTORS
04/01/2019 Taiwan I655835 BOOTSTRAP CAPACITOR OVER-VOLTAGE MANAGEMENT CIRCUIT FOR GaN TRANSISTOR BASED POWER CONVERTERS
03/26/2019 US 10243546 ENHANCEMENT MODE FET GATE DRIVER IC
03/12/2019 US 10230341 HIGH EFFICIENCY VOLTAGE MODE CLASS D TOPOLOGY
03/01/2019 Japan 6486938 HIGH EFFICIENCY VOLTAGE MODE CLASS D TOPOLOGY
02/26/2019 US 10218353 LOW DISTORTION RF SWITCH
02/22/2019 Japan 6483116 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
02/22/2019 China ZL201480042237.4 GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
01/22/2019 China ZL201480042752.2 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
11/11/2018 Taiwan I641218 ENHANCEMENT MODE FET GATE DRIVER IC
11/06/2018 China ZL201480020258.6 METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
11/02/2018 China ZL201480043093.4 INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME
11/02/2018 China ZL201480049293.0 HIGH EFFICIENCY VOLTAGE MODE CLASS D TOPOLOGY
10/09/2018 US 10096702 MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHODS FOR FABRICATING SAME
10/02/2018 US 10090274 FLIP CHIP INTERCONNECTION WITH REDUCED CURRENT DENSITY
09/25/2018 US 10084445 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
08/31/2018 Japan 6393758 GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
08/10/2018 Japan 6381639 ISOLATION STRUCTURE AND METHOD TO FABRICATE THE SAME IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
07/21/2018 Taiwan I543368 ISOLATION STRUCTURE AND METHOD TO FABRICATE THE SAME IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
07/20/2018 Japan 6371309 PARASITIC INDUCTANCE REDUCTION CIRCUIT BOARD LAYOUT DESIGNS FOR MULTILAYERED SEMICONDUCTOR DEVICES
06/15/2018 Japan 6351718 METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
02/21/2018 Taiwan I615977 INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME
02/06/2018 US 9887677 HIGH EFFICENCY VOLTAGE MODE CLASS D TOPOLOGY
01/30/2018 China ZL201380068885.2 PARASITIC INDUCTANCE REDUCTION CIRCUIT BOARD LAYOUT DESIGNS FOR MULTILAYERED SEMICONDUCTOR DEVICES
12/08/2017 Hong Kong 1188514 ENHANCEMENT MODE GaN HEMT DEVICE WITH A GATE SPACER AND METHOD FOR FABRICATING THE SAME
12/05/2017 US 9837438 GAN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONAL COMPONENTS
12/01/2017 Taiwan I607626 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
08/29/2017 US 9748347 GATE WITH SELF-ALIGNED LEDGE FOR ENHANCEMENT MODE GaN TRANSISTORS
08/21/2017 Taiwan I596893 HIGH EFFICIENCY VOLTAGE MODE CLASS D TOPOLOGY
07/07/2017 Hong Kong HK1189427 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
05/30/2017 US 9667245 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
05/26/2017 Japan 6147018 ENHANCEMENT MODE GaN HEMT DEVICE WITH A GATE SPACER AND METHOD FOR FABRICATING THE SAME
04/25/2017 US 9634555 METHOD FOR OPERATING A NON-ISOLATED SWITCHING CONVERTER HAVING SYNCHRONOUS RECTIFICATION CAPABILITY SUITABLE FOR POWER FACTOR CORRECTION APPLICATIONS
03/28/2017 US 9607876 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
02/28/2017 US 9583480 INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME
02/21/2017 Taiwan I572037 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
01/18/2017 China ZL201310057366.8 ENHANCEMENT MODE GAN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FABRICATING THE SAME
01/11/2017 Taiwan I566328 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
01/11/2017 Taiwan I566402 ENHANCEMENT MODE GaN HEMT DEVICE WITH A GATE SPACER AND METHOD FOR FABRICATING THE SAME
01/04/2017 Korea 10-1694883 BACK DIFFUSION SUPRESSION STRUCTURES
12/02/2016 Japan 6051168 ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GAN TRANSISTORS
11/16/2016 China ZL201280005518.3 ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GAN TRANSISTORS
11/01/2016 US 9484862 DEVICE AND METHOD FOR BIAS CONTROL OF CLASS A POWER RF AMPLIFIER
10/21/2016 Taiwan I555209 GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
10/21/2016 Taiwan I555197 PARALLEL CONNECTION METHODS FOR HIGH PERFORMANCE TRANSISTORS
10/11/2016 Korea 10-1666910 ENHANCEMENT MODE GAN HEMT DEVICE AND METHOD TO FABRICATING THE SAME
09/22/2016 Korea 10-1660871 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRONICALLY ISOLATED BACK SURFACE
09/22/2016 Korea 10-1660870 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
09/21/2016 China ZL201180060404.4 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
08/01/2016 Taiwan I544606 PARASITIC INDUCTANCE REDUCTION CIRCUIT BOARD LAYOUT DESIGNS FOR MULTILAYERED SEMICONDUCTOR DEVICES
06/11/2016 Taiwan I538208 ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GaN TRANSISTORS
05/09/2016 Korea 10-1620987 DOPANT DIFFUSION MODULATION IN GaN BUFFER LAYERS
05/03/2016 US 9331061 PARALLEL CONNECTION METHODS FOR HIGH PERFORMANCE TRANSISTORS
05/03/2016 US 9331191 GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
03/11/2016 Taiwan I525765 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRICALLY ISOLATED BACK SURFACE
02/11/2016 Taiwan I521641 METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
12/21/2015 Taiwan I514567 BACK DIFFUSION SUPRESSION STRUCTURES
12/21/2015 Taiwan I514568 ENHANCEMENT MODE GAN HEMT DEVICE AND METHOD TO FABRICATE THE SAME
12/15/2015 US 9214528 METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
12/15/2015 US 9214461 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
12/15/2015 US 9214399 INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME
10/27/2015 US 9171911 ISOLATION STRUCTURE IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
10/16/2015 Hong Kong HK1165614 DOPANT DIFFUSION MODULATION IN GAN BUFFER LAYERS
10/16/2015 Hong Kong HK1165616 BACK DIFFUSION SUPRESSION STRUCTURES
09/01/2015 Taiwan I499054 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
07/31/2015 Japan 2012-504807 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
07/31/2015 Japan 5785153 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
06/21/2015 Taiwan I489751 METHOD FOR OPERATING A NON-ISOLATED SWITCHING CONVERTER HAVING SYNCHRONOUS RECTIFICATION CAPABILITY SUITABLE FOR POWER FACTOR CORRECTION APPLICATIONS
05/19/2015 US 9035417 PARASITIC INDUCTANCE REDUCTION CIRCUIT BOARD LAYOUT DESIGNS FOR MULTILAYERED SEMICONDUCTOR DEVICES
04/22/2015 China 201080014928.5 DOPANT DIFFUSION MODULATION IN GAN BUFFER LAYERS
04/22/2015 China 201080015360.9 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRONICALLY ISOLATED BACK SURFACE
04/08/2015 China 201080015469.2 BACK DIFFUSION SUPRESSION STRUCTURES
03/03/2015 US 8969918 ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR WITH IMPROVED GATE CHARACTERISTICS
02/06/2015 Japan 5689869 ENHANCEMENT MODE GAN HEMT DEVICE AND METHOD TO FABRICATING THE SAME
01/23/2015 Japan 5684230 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRONICALLY ISOLATED BACK SURFACE
12/26/2014 Japan 5670427 DOPANT DIFFUSION MODULATION IN GaN BUFFER LAYERS
12/12/2014 Japan 5663000 BACK DIFFUSION SUPRESSION STRUCTURES
11/21/2014 Hong Kong 1165615 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
11/18/2014 US 8890168 ENHANCEMENT MODE GAN HEMT DEVICE
10/07/2014 US 8853749 ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GaN TRANSISTORS
09/02/2014 US 8823012 ENHANCEMENT MODE GaN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FABRICATING THE SAME
07/30/2014 China ZL201080015425.X COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
07/22/2014 US 8785974 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRICALLY ISOLATED BACK SURFACE
05/07/2014 China ZL201080015388.2 ENHANCEMENT MODE GAN HEMT DEVICE AND METHOD FOR FABRICATING THE SAME
04/11/2014 Taiwan I434414 ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR WITH IMPROVED GATE CHARACTERISTICS
09/21/2013 Taiwan I409859 DOPANT DIFFUSION MODULATION IN GaN BUFFER LAYERS
05/07/2013 US 8436398 BACK DIFFUSION SUPRESSION STRUCTURES
04/30/2013 US 8431960 DOPANT DIFFUSION MODULATION IN GaN BUFFER LAYERS
03/26/2013 US 8404508 ENHANCEMENT MODE GAN HEMT DEVICE AND METHOD TO FABRICATING THE SAME
01/08/2013 US 8350294 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME