EPC9002C : 100 V Half Bridge with Gate Drive

The EPC9002C development board is a 100 V maximum device voltage, 10 A maximum output current, half bridge with onboard gate drives, featuring the EPC2001C enhancement mode (eGaN®) field effect transistor (FET).

The purpose of this development board is to simplify the evaluation process of the EPC2001C eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

面向新設計,EPC 氮化鎵專家推薦EPC9097


EPC Development Board
* 假設電感式負載,最大電流取決於晶片的溫度--實際最大電流取決於開關頻率、匯流排電壓及散熱效率。
# 受限于需要“更新”高側自舉電源電壓的時間

* Assumes inductive load, maximum current depends on die temperature – actual maximum current will be subject to switching frequency, bus voltage and thermal cooling.

# Dependent on time needed to ‘refresh’ high side bootstrap supply voltage.