EPC90122: 80 V, 40 A Development Board
The EPC90122 development board is a 80 V maximum device voltage, 40 A maximum output current, half bridge
with onboard gate drives, featuring the EPC2206
enhancement mode (eGaN®) field effect transistor (FET).
The EPC90122 development board is 2” x 2” and contains two EPC2206 eGaN FETs in a half bridge configuration using
the Texas Instruments LMG1205 gate driver.
To simplify the evaluation process of the EPC2206 GaN FET,
all the critical components and layout for optimal switching performance are implemented. Video: How to Turn an EPC Development Board
into a Prototype