VDS（最大值）, 65 V
ID（RMS最大值）, 1.6 A
半橋並配有驅動器
The development board is in a half bridge topology with onboard gate drives, featuring the EPC8000 family of
high frequency enhancement mode (eGaN®) field effect transistors (FETs).
The purpose of these development boards is to simplify the evaluation process of the EPC8000 family of eGaN
FETs by including all the critical components on a single board that can be easily connected into any
existing converter.
產品狀況:停產產品
組裝好的參考設計是非賣品，僅用作測試和驗證性能。
如需進一步協助，可聯繫氮化鎵專家。