EPC9035 - Development Board

EPC9035 : 100 V 半橋開發板

EPC Development Board

The EPC9035 development board is a 100 V maximum device voltage, 30 A maximum output current, half bridge with onboard gate drives, featuring the EPC2022 enhancement mode (eGaN®) field effect transistor (FET).

The purpose of this development board is to simplify the evaluation process of the EPC2022 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

面向新設計,EPC 氮化鎵專家推薦EPC90123