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Projecting eGaN^® Device Lifetime

Download this ebook for insights into the strategy underlying eGaN devices’ remarkable field reliability record.

This ebook contains five key takeaways leading to a better understanding of the conditions leading to failure in eGaN devices and uses the information to create models to predict reliability.

These five key takeaways are:

1. Gate stress test to fail and projecting the lifetime of eGaN devices
2. Drain stress test to fail and projecting the lifetime of eGaN devices while virtually eliminating dynamic R_DS(on)
3. Lidar pulse stress test to assess long-term reliability
4. Thermo-mechanical stress and the selection of underfill for ultra-long-term device operation under severe temperature excursions
5. eGaN device field reliability over 226 billion hours of operation