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The eGaN FET-Silicon Power Shoot-Out: Part 2 – Drivers, Layout
Posted 2011年1月19日
eGaN FETs differ from silicon MOSFETs in part because of their significantly faster switching speeds. In the second article of this series, we explore the different requirements for gate drive, layout, and thermal management.
By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
January 1, 2011
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