雜談GaN技術

eGaN® FET 的切換速度比矽 MOSFET 快得多，因此需要更仔細地考慮 PCB 佈局設計，以盡量減少寄生電感。寄生電感會導致更高的過衝電壓和較慢的切換過渡。本應用說明回顧了設計最佳功率級佈局的關鍵步驟，以避免這些不良影響並最大化轉換器性能。

Class-D audio amplifiers have traditionally been looked down upon by audiophiles, and in most cases, understandably so. Switching transistors for Class-D amplifiers have never had the right combination of performance parameters to produce an amplifier with sufficient open-loop linearity to satisfy the most critical listeners. This restricted the classical analog modulator Class-D systems to lower-power, lower-quality sound systems.

To accomplish the required headline marketing THD+N performance targets, Class-D amplifiers have had to resort to using large amounts of feedback to compensate for their poor open-loop performance. By definition, large amounts of feedback introduce transient intermodulation distortion (TIM), which introduces a ‘harshness’ that hides the warm subtleties and color of the music that were intended for the listening experience.