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How2GaN夏季研討會

瞭解死區時間、QRR和COSS的影響

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How2GaN夏季研討會系列的第三個主題是瞭解死區時間、QRR和COSS的影響。涵蓋的內容包括:

  • 死區時間損耗如何影響開關損耗
  • 體二極體壓降和反向恢復
  • COSS 的作用
  • 考慮這些損耗的設計技巧

註册後,您將收到一封確認電子郵件,通知您如何取得網上研討會的錄製視頻。

對未來研討會題目提出建議

網路研討會時間表 - 請點擊這裡

Mark Gurries

Speaker: Mark Gurries is a FAE providing EPC technical support to the western half of the USA. Mark works directly with customers providing all forms of technical support from education to doing designs for large customers to help them realize the full benefits of GaN FETs over silicon based solutions in multiple different type of applications.

Prior to joining EPC in 2016, Mark was a senior design engineer with 31 years of experience in product design and IC’s in the DC-DC market. Notable companies that Mark has worked for are Apple designing notebook power supplies and Linear Technology defining IC functions and specifications while designing IC demoboards and datasheet application notes. Since then Mark has moved on to smaller startup companies. Mark started his career in 1985 working for a couple of mil spec product manufactures designing and/or manufacturing power supplies. Mark has 5 patents and written over 11 technical articles in multiple electronic publications.

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瞭解死區時間、QRR和COSS的影響

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