National Semiconductor Corp. (NYSE:NSM) today introduced the industry’s first 100V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presents significant new challenges. National’s LM5113 driver integrated circuit (IC) eliminates these challenges, enabling power designers to realize the benefits of GaN FETs in a variety of popular power topologies.

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宜普电源转换公司(www.epc-co.com) 宣布其硅基增强型氮化镓(eGaN®)功率FET系列器件获得声望很高的《电子工程专辑》颁发年度电子创新(ACE)奖项的能源技术大奖。ACE奖项旨在表彰在全球产业中展现领先和创新精神并使我们生活更加美好的技术创造者。

“我们非常荣幸能够获得ACE奖项。这个奖项证明宜普的增强型GaN功率晶体管为电源转换技术领域带来重大突破。我们相信硅基MOSFET的表现已经走到了尽头，eGaN技术将引领电源管理解决方案的表现持续改进。” 宜普公司合伙创始人、首席执行官Alex Lidow表示。

Microsemi公司正在与宜普电源转换公司(www.epc-co.com)合作开发一系列用于高可靠性宇航与军事应用中的高性能FET产品。两家公司在2011年3月21至24日于佛罗里达州奥兰多市举行的政府微电路应用与关键技术会议(GOMAC)上发表了题为“在长期应力下的增强型氮化镓产品特性”的联合研究论文。这份研究报告提供了可靠性测试结果，并展示了在高温和暴露在辐射环境下器件的稳定性能。

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宜普电源转换公司(www.epc-co.com)宣布推出EPC2001和EPC2015两种无铅且符合RoHS(有害物质限制条例)要求的增强型氮化镓 (eGaN™) FET。

EPC2001 FET是一种100 V_DS器件，R_DS(ON) 最大值是7mΩ，栅极电压为5V。EPC2015是一种40 V_DS器件，RDS(ON) 最大值是4mΩ。与同样先进的硅基功率MOSFET相比，这两种eGaN FET都具有更卓越的性能优势。两种器件都具有低导通电阻，体积比相同电阻的硅器件更小，并且具有卓越许多倍的开关性能。

Efficient Power Conversion Corporation (EPC) Market Leading eGaN™ FET Named Finalist in Prestigious 2010 EDN Innovation Awards Competition

EL SEGUNDO, Calif-February 23, 2011 - Efficient Power Conversion Corporation’s EPC1010 enhancement-mode gallium nitride on silicon (eGaN™) power FET has been named a finalist in EDN’s 21st annual Innovation Awards http://innovation.edn.com/) within the Power IC’s category.

EL SEGUNDO, Calif-January 6, 2011 — Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN™) power FETs have been honored with an Electronic Products’ Product of the Year award.

The editors of Electronic Products — a leading trade publication for electronic design engineers — evaluated thousands of products launched in 2010. The winning products were selected on the basis of innovative design, significant advancement in technology or application and substantial achievement in price and performance. The eGaN FETs demonstrated success in the category of discrete semiconductors.

EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9002 development board to make it easier for users to get started designing with EPC’s 100V enhancement-mode GaN transistor products.

The EPC9002 development board is a 50 V maximum input voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC1001 100V GaN Power Transistor. The purpose of this development board is to simplify the evaluation process of the EPC1001 GaN power transistor by including all the critical components on a single board that can be easily connected into any existing converter. The EPC9002 development board is 2” x 1.5” and contains not only two EPC1001 GaN transistors in a half bridge configuration with gate drivers, but also an on board gate drive supply and all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced that the company has made available on its web site SPICE models for all of its enhancement mode GaN transistors.

TSPICE, PSPICE, and LTSPICE device models have been developed to help the designer of advanced GaN-based power conversion circuits and systems understand the value of this new power transistor family and reduce their time-to-market with benchmark products. These free downloads are available at:

EL SEGUNDO, Calif-March 8, 2010 -Efficient Power Conversion Corporation (EPC) today introduced a family of enhancement mode power transistors based on its proprietary Gallium Nitride on Silicon technology.

Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, these power transistors demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance. Applications that benefit from this newly available performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits, telecom base stations, and cell phones, to name just a few.

EL SEGUNDO, Calif. - March 8, 2010 -Efficient Power Conversion Corporation (EPC) today announced that Digi Key Corporation will be the exclusive global distributor for EPC’s line of enhancement-mode Gallium Nitride power transistors.

Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, these power transistors demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance. Applications that benefit from this newly available performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits, telecom base stations, and cell phones, to name just a few.