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Using GaN FETs to Burst Through 5 kW/in3 in a 48 V to 12 V LLC Converter

Using GaN FETs to Burst Through 5 kW/in3 in a 48 V to 12 V LLC Converter

LLC resonant converters have emerged as the preferred topology for an intermediate 48 V to 12 V conversion due to their high efficiency, high power density and good dynamic response. The outstanding performance resulting from the combination of this topology with GaN transistors has been demonstrated in the past. This article presents how the newest generation of GaN devices, such as those from EPC, continues to push the envelope even further.

Bodo’s Power Systems
November, 2023
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GaN FET可实现5130 W/in3 的基准功率密度,支持人工智能和先进计算应用

GaN FET可实现5130 W/in3 的基准功率密度,支持人工智能和先进计算应用

EPC9159是一款1 kW、48 V/12 V的LLC转换器,占板面积仅为17.5 mm x 22.8 mm,可实现5130 W/in3最先进的功率密度。

宜普电源转换公司(EPC)宣布推出EPC9159参考设计。这是一款48 V/12 V的LLC转换器,专为高功率密度48 V服务器电源和DC/DC转换器而设计。该参考设计可在17.5 mm x 22.8 mm的微小封装内提供高达1 kW的功率,其功率密度为5130 W/in3。这是在初级侧和次级侧电路中采用于高开关频率工作的氮化镓(GaN)功率器件才可以实现的。

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基于氮化镓器件的功率转换解决方案着眼于下一代应用

基于氮化镓器件的功率转换解决方案着眼于下一代应用

宜普电源转换公司(EPC)是增强型氮化镓 (GaN) FET 和 IC产品的领导者,在纽伦堡举行的 PCIM Europe 2023展会上分享了关于氮化镓技术的发展和其应用的演示。 我们与该公司的联合创始人兼首席执行官 Alex Lidow 就电力电子行业和氮化镓技术对行业的影响进行了深度交流。

Electronic Design
2023年5月
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GaN-based Design of a 2 kW 48 V/12 V Bi-directional Power Module for 48 V Mild Hybrid Electric Vehicles

GaN-based Design of a 2 kW 48 V/12 V Bi-directional Power Module for 48 V Mild Hybrid Electric Vehicles

With the increase in government mandates to combat climate change, automakers are moving quickly to leverage new technology to respond by switching from the internal combustion engine to electric-drive vehicles. This article presents the design of a 2 kW, two-phase 48 V/12 V bi-directional converter using GaN FETs that achieves 96% efficiency and is targeted for the 48 V mild hybrid system.

PSD North America
March, 2023
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EPC新推200 V、10 mΩ 、采用QFN封装的GaN FET, 实现高效灵活设计

EPC新推200 V、10 mΩ 、采用QFN封装的GaN FET, 实现高效灵活设计

宜普电源转换公司(EPC)推出 200 V、10 mΩ的EPC2307,完善了额定电压为 100V、150 V和200 V的6个GaN晶体管系列,提供更高的性能、更小的解决方案和易于设计的DC/DC 转换、AC/DC SMPS和充电器、太阳能优化器和微型逆变器,以及电机驱动器。

全球增强型氮化镓FET和IC领导者EPC推出 200 V、10 mΩ的EPC2307,采用耐热增强型QFN封装,占位面积仅为3 mm x 5 mm。

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GaN’s Evolution from Science Project to Mainstream Power Conductor

GaN’s Evolution from Science Project to Mainstream Power Conductor

Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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Lowest On-resistance 150 V and 200 V Transistors on the Market Now Shipping from GaN Leader EPC

Lowest On-resistance 150 V and 200 V Transistors on the Market Now Shipping from GaN Leader EPC

Efficient Power Conversion (EPC) introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs offering higher performance and smaller solution size and cost for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— December 2022 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.

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eGaN FETs Enable More Than 4-kW/in3 Power Density for 48 V to 12 V Power Conversion

eGaN FETs Enable More Than 4-kW/in3 Power Density for 48 V to 12 V Power Conversion

Growing computational power and miniaturization of electronics in computing and data centers is increasingly putting pressure on 48-V power delivery and conversion systems. High-efficiency and high-power–density converters enable a reduction in power losses at the system level while allowing smaller form factors. In this context, LLC resonant topologies combined with GaN technology succeed to deliver outstanding performance, as it has been demonstrated with multiple examples. This article will show the key design parameters and components to achieve beyond 4 kW/in3 of power density in a 48-V to 12-V LLC converter using eGaN® FETs.

Power Electronics News
December, 2022
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New Automotive Qualified GaN FETs for Vehicle Electronics and Advanced Autonomy from EPC

New Automotive Qualified GaN FETs for Vehicle Electronics and Advanced Autonomy from EPC

EPC introduces two new 80 V AEC-Q101 qualified GaN FETs, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive 48 V- 12 V DC-DC conversion, infotainment, and lidar for autonomous driving.

EL SEGUNDO, Calif. — November 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 mm footprint, offering designers significantly smaller and more efficient devices than silicon MOSFETs for automotive DC-DC for 48V-12V conversion, infotainment, and lidar for autonomous driving.

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EPC Launches a New Generation of eGaN Technology that Doubles Performance

EPC Launches a New Generation of eGaN Technology that Doubles Performance

Efficient Power Conversion (EPC) introduces the 80 V, 4 mOhm EPC2619 GaN FET in tiny 1.5 mm x 2.5 mm footprint, offering higher performance and smaller solution size than traditional MOSFETs for high power density applications, including DC-DC conversion, motor drives, and synchronous rectification for 12 V – 20 V.

EL SEGUNDO, Calif.— November 2022 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 80 V, 4 mOhm EPC2619. This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC’s prior-generation products.

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GaN Power Behind Mild Hybrid Vehicle Electrification

GaN Power Behind Mild Hybrid Vehicle Electrification

With increasing legislation aimed at higher fuel efficiency standards, vehicle manufacturers are searching for cost-effective solutions to meet these demands while still providing the power required for ever-increasing electronically driven functions.  This article details a bi-directional high power converter for mild-hybrid cars and battery backup units using GaN FETs to achieve efficiency exceeding 96% when converting from 48 V to 14.3 V at 500 kHz switching frequency.

Power Electronics Europe
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基于GaN FET封装兼容的解决方案可实现性能和成本优化并同时提高功率密度和热性能

基于GaN FET封装兼容的解决方案可实现性能和成本优化并同时提高功率密度和热性能

宜普电源转换公司(EPC)新推100 V、3.8 mΩ 的氮化镓场效应晶体管EPC2306,为高功率密度应用提供性能更高和更小的解决方案,包括 DC/DC 转换、AC/DC 充电器、太阳能优化器和微型逆变器、电机驱动器和D类音频放大器等应用。

宜普电源转换公司是增强型氮化镓(eGaN®)功率FET和IC领域的全球领导者,新推100 V、采用耐热增强型QFN封装的EPC2306,用于高密度计算应用的48 V DC/DC转换、电动汽车和机器人的48 V BLDC 电机驱动器、太阳能优化器和微型逆变器,以及 D 类音频放大器

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EPC新推最小型化的100 V、2.2 mΩ 氮化镓场效应晶体管

EPC新推最小型化的100 V、2.2 mΩ 氮化镓场效应晶体管

宜普电源转换公司(EPC)新推100 V、2.2 mΩ的氮化镓场效应晶体管(EPC2071),为设计工程师提供比硅MOSFET更小、更高效的器件,用于高性能、占板面积受限的应用。

全球行业领先供应商宜普电源转换公司为业界提供增强型氮化镓(eGaN®)功率场效应晶体管和集成电路,最新推出100 V、典型值为1.7 mΩ 的EPC2071氮化镓场效应晶体管,为客户提供更多可选的低压氮化镓晶体管和可以立即发货。

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从氮化镓器件的行为确定其性能的模型

从氮化镓器件的行为确定其性能的模型

氮化镓场效应晶体管和集成电路的用户现在有了一个工具来确定应用中需要的降额和降额设计中应考虑的因素。宜普公司开发了一个基于第一原理的物理模型,以解释氮化镓晶体管在硬开关时,导通电阻如何上升。本文提供了两个同步整流应用实例的演示。

Electronic Specifier
2022年5月
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High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

Automotive 48 V/12 V converters are essential in modern hybrid electric vehicles, as the energy is exchanged between the 48 V and 12 V buses. This two-voltage system accommodates legacy 12 V systems and provides higher power for 48V to loads such as vacuum and water pumps, electric super chargers, steering, and audio systems. Among all the requirements for the 48 V/12 V converter, efficiency, power density, size and cost are on the top of the list. This article addresses these design criteria by employing the GaN ePower™ Stage, EPC23101, and compares it with a previous design using discrete EPC2206 devices.

Bodo’s Power Systems
March, 2022
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EPC在APEC 2022展会上展示GaN技术如何 为48 V应用带来革命性

EPC在APEC 2022展会上展示GaN技术如何 为48 V应用带来革命性

EPC公司的氮化镓专家将在APEC展会分享多项现场演示以阐释氮化镓技术如何为许多行业的功率转换带来革命性突破,包括计算、通信和e-mobility。

宜普电源转换公司(EPC)团队将于3月20日至24日在休斯顿举行的IEEE应用电力电子会议和博览会(APEC 2022)上进行多场关于氮化镓技术的演讲和专业研讨会,详请如下。 此外,我们将在1302号展位展出采用新型eGaN®FET 和 IC的客户的最新产品。

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