EPC2619: 80 V, 3.3 mΩ Enhancement Mode GaN Power Transistor

VDS, 80 V
Typical RDS(on), 3.3 mΩ
ID, 29 A
Pulsed ID, 164 A

EPC2619 Enhancement Mode GaN Power Transistor
Package Size: 2.5 mm x 1.5 mm

Applications

  • DC-DC Converters
  • Sync rectification applications to 12 V / 20 V DC
  • Motor Drive
    • Power Tools
    • eBikes and eScooters
    • Robots
    • DC Servo
    • Medical robotics
  • Solar optimizers
  • Class-D Audio
  • Lidar
  • USB PD 3.1 chargers

Benefits

  • High efficiency
    • Lower conduction and switching losses
  • No reverse recovery (QRR)
  • Ultra-small footprint
  • Excellent thermal performance
Status: Engineering
Engineering devices, designated with an ENG* suffix at point of purchase, are on engineering status and should not be used for reliability stress testing or other qualification testing without contacting your local field application engineer for the latest status.
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