GaNワインラウンジ

How GaN is Challenging Silicon: Insights from TDK’s Ralf Higgelke at PCIM

In this GaN Wine Lounge episode at PCIM Nuremberg, EPC’s Maurizio Di Paolo Emilio interviews TDK’s Ralf Higgelke about his journey from power supply design engineer to technology journalist and corporate communications leader. Higgelke explains how this background gives him a holistic view of power electronics and wide bandgap technologies. He argues that GaN and silicon carbide are complementary but that GaN is rapidly encroaching on higher-power domains, highlighting applications in AI data centers, robotics, and future solid-state transformers.

QSpice Meets GaN: Accurate Models for Real-World Designs

At PCIM Europe in Nuremberg, Maurizio Di Paolo Emilio interviewed Mike Engelhardt, inventor of QSPICE, about the latest advances in GaN power electronics. They discussed how GaN enables faster, more efficient power designs, common simulation pitfalls, and the importance of accurate device models for reliable circuit design. Mike also previewed the 2026 GaN FET model for QSPICE and shared insights into future integration with test equipment and vector network analyzers.

From Room Temperature to 4 Kelvin: EPC’s GaN Journey for Quantum Computing

This interview with Shengke Zhang, Vice President of Reliability at EPC, explores the development of a fully functional GaN power converter operating at 4 Kelvin. Zhang explains why 4 K is a critical temperature for superconducting and quantum computing research and why GaN HEMTs outperform silicon MOSFETs in cryogenic conditions. He details key engineering challenges, especially wiring and peripherals, and outlines future work on monolithic power stages, system-level reliability for AI, and short-circuit robustness in low-voltage GaN devices.

Advances in GaN Power Electronics: A System‑Level and Multidisciplinary Design Perspective

Gallium nitride (GaN) is reshaping power electronics from USB‑C chargers and telecom supplies to emerging automotive and industrial applications. Building on the collaboration between Politecnico di Torino and EPC, this session highlights the shift from component‑level to system‑level design, where efficiency, reliability, cost, and scalability are co‑optimized. We discuss GaN motor control, reduction of EMI and motor aging, AI‑aided 3D design, digital twins, predictive maintenance, and cryogenic operation, illustrating how intelligent, highly integrated converters will enable the next wave of innovation.

GaN vs. Silicon: Powering the Next Wave of AI Servers and Humanoids

This interview with Alex Lidow, CEO of EPC, explores how gallium nitride (GaN) is transforming power architectures in AI data centers, humanoid robots, and space systems. Lidow explains the shift to 800 V DC buses, challenges of megawatt racks, and the impact of Gen 7 and Gen 8 GaN on low‑voltage, high‑current conversion for advanced GPUs. He also addresses reliability misconceptions, thermomechanical design practices, and regional adoption trends across China, Japan, South Korea, and Taiwan.

GaN’s Maturity and Future: A Conversation with EPDT Editor Mike Green

Gallium nitride (GaN) has moved from emerging technology to a multibillion‑dollar, rapidly scaling market. In this interview from the PCIM show in Nuremberg, EPC’s Maurizio Di Paolo Emilio talks with EPDT editor Mike Green about GaN’s maturation, its competitive dynamics with silicon, and key high‑value applications in AI data centers, automotive lidar, robotics, and space. Green highlights EPC’s role, technology advantages, and roadmap, and shares personal insights on his passions beyond publishing and the pioneers who shaped semiconductors.

2026年7月10日0

Scaling AI Power with GaN: Inside the Renesas–EPC Alliance

This session explores how the second‑source and licensing agreement between Renesas and EPC is accelerating GaN adoption in AI data centers, automotive, robotics, and industrial applications. The speakers examine the shift to new “grid‑to‑core” 800 V DC architectures and show how low‑voltage GaN enables higher efficiency and power density. They discuss multi‑sourcing strategies, internal wafer fabrication for low‑voltage GaN, and the crucial role of advanced packaging and thermo‑mechanical reliability. The panel closes with a clear outlook on how this partnership will shape the next generation of GaN‑based power systems.

2026年7月2日0

モーター駆動に対するGaNの力

このインタビューでは、ニュースレターのWBG TechnoBiteの創設者であるQian Luo氏が、EPCのChen Huと共に、なぜGaNがモーター駆動においてゲーム・チェンジャとなりつつあるのかを話します。両氏は、GaNの高速スイッチング、高効率、小型な統合性が、産業自動化やロボットから、イーモビリティ、家電製品に至るまで、いかにモーター・システムの小型化、静音化、高精度化を可能にするかを探ります。設計上のトレードオフや熱特性の利点、そして中国のエコシステムがいかにGaNの採用を加速させているかといった話題にも触れ、ワイド・バンドギャップ半導体を使ったモーター駆動技術の今後の展望について、技術者にとって有益な知見を提供します。

2026年6月24日0

NexperiaとEPCが語るGaN：性能、信頼性、そして業界の連携

ドイツのニュルンベルクで開催されたPCIMでGaNワイン・ラウンジを実施し、Maurizio Di Paolo Emilioが、EPCのCEO（最高経営責任者）で共同創立者であるAlex Lidow（アレックス・リドウ）と、オランダの半導体メーカーNexperiaのGaNマーケティングとアプリケーション部門責任者であるRoberto Crisafulli氏と対談しました。GaNが、その優れた効率、電力密度、スイッチング周波数によって、AI（人工知能）の電源供給、モーター駆動、ロボット、データセンターといった分野でシリコンMOSFETに急速に取って代わりつつある理由を説明しました。GaNの信頼性が十分に理解され、本格的な採用が可能になったことを踏まえ、エコシステムにおける連携や適切な品質認定基準の必要性についても強調しました。