EPC9003:開發板

EPC Development Board

VDS(最大值)、200 V
ID(RMS最大值)、5 A
帶板載驅動器的半橋配置

The EPC9003 development board is 2” x 1.5” and contains not only two EPC2010 eGaN FET in a half bridge configuration using Texas Instruments LM5114 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

產品狀況:停產產品
面向新設計,EPC 氮化鎵專家推薦EPC90124
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對EPC公司的
eGaN FET及集成电路
有任何問题嗎?
向GaN技術專家請教