EPC90140: 200 V, 30 A GaN-based half-bridge development board


The EPC90140 is a half-bridge development board with onboard gate drive featuring the 200 V rated EPC2304 eGaN®FET. The purpose of this development board is to simplify the evaluation process of the EPC2304 by including all the critical components on a single board that can be easily connected into most existing converter topologies.

The EPC90140 development board measures 2” x 2” and contains two EPC2304 GaN FETs in a half bridge configuration. The EPC90140 features the Onsemi NCP51820AMNTWG gate driver. The board contains all critical components, and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

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eGaN FET及集成电路