EPC23103: 100 V, 25 A, QFN Package, ePower™ Stage IC

Integrated high side and low side eGaN^® FET with internal gate driver, level shifter, bootstrap charging, and gate drive buffer circuits
功率級負載電流爲1 MHz、輸出電流爲25 A
最大輸入電壓爲100 V

封裝尺寸：3.5 mm x 5 mm

特點

Integrated high side and low side eGaN FET with internal gate driver and level shifter
5 V external bias supply
3.3 V or 5 V CMOS input logic levels
Independent high side and low side control inputs
Logic lockout commands both FETs off when inputs are both high at same time
External resistors to tune SW switching times and over-voltage spikes above rail and below ground
Robust level shifter operating for hard and soft switching conditions
False trigger immunity from fast switching transients
Synchronous charging for high side bootstrap supply
Disable input engages low quiescent current mode from V_DRV supply
Power on reset for low side V_DD supply
Power on reset for high side V_BOOT supply
Active gate pull-down for HS FET and LS FET with loss of V_DRV supply
Thermally enhanced QFN package with exposed top for low thermal resistance from junction to top-side heatsink