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氮化鎵的雷霆威力及演變

氮化鎵的雷霆威力及演變

從2010年開始,自矽基氮化鎵(GaN)電晶體商用化後,低壓氮化鎵電晶體推動了很多全新應用的發展。氮化鎵元件具備超快速開關,推動全新市場諸如雷射雷達、波峰追蹤及無線電源市場的出現。這些全新應用進一步實現更強大的供應鏈、低製造成本及元件前所未有的高可靠性。這些優勢使得比較保守的設計工程師在DC/DC轉換器、AC/DC轉換器及車載等各種應用開始對氮化鎵元件進行評估。在本文章系列,我們將討論多種發揮氮化鎵元件優勢的應用,實現最終產品差異化的競爭優勢。首先,我們會探討是甚麼因素加快了氮化鎵元件的普及。

Power Systems Design
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Characterization of Wide Bandgap Power Semiconductor Devices Published by The Institution of Engineering and Technology

Characterization of Wide Bandgap Power Semiconductor Devices Published by The Institution of Engineering and Technology

Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization.

EL SEGUNDO, Calif. – September 2018 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication by the Institution of Engineering and Technology of Characterization of Wide Bandgap Power Semiconductor Devices co-authored by EPC Senior Applications Engineer, Dr. Edward A. Jones. This textbook provides essential tools to assist researchers, advanced students, and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications and includes examples of applying the described methodology.

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宜普電源轉換公司(EPC)產品榮獲《今日電子》雜誌/21IC中國電子網 2018年度“Top10電源產品–技術突破獎”

宜普電源轉換公司(EPC)產品榮獲《今日電子》雜誌/21IC中國電子網 2018年度“Top10電源產品–技術突破獎”

宜普电源转换公司(EPC)的两个车规级氮化镓晶体管(EPC2202及EPC2203)成功通过了国际汽车电子协会所制定的AEC Q101分立器件应力测试认证,推动一系列面向车用及其它严峻环境的应用的发展。

宜普電源轉換公司(EPC)的第一批通過國際汽車電子協會所制定的AEC Q101分立器件應力測試認證的氮化鎵場效應電晶體(EPC2202EPC2203),榮獲《今日電子》雜誌與21IC中國電子網頒發2018年度“Top-10電源產品獎—技術突破獎”。該獎項在2018年9月13日於北京舉行的21iC電源技術研討會上頒發。

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宜普電源轉換公司(EPC)推出100 V、尺寸比等效矽元件小30倍及工作在500 kHz頻率時可實現97%效率的氮化鎵(eGaN)功率電晶體

宜普電源轉換公司(EPC)推出100 V、尺寸比等效矽元件小30倍及工作在500 kHz頻率時可實現97%效率的氮化鎵(eGaN)功率電晶體

專為功率系統設計師而設的EPC2051功率電晶體是一種100 V、25 mΩ並採用超小型晶片級封裝的電晶體,可實現37 A脈衝輸出電流。EPC2051是多種應用的理想元件,包括48 V功率轉換器、雷射雷達及LED照明等應用。

宜普電源轉換公司(EPC)宣佈推出100 V的EPC2051氮化鎵場效應電晶體,其佔板面積只是1.1平方毫米、最大導通阻抗(RDS(on))為25 mΩ及脈衝輸出電流高達37 A 以支援高效功率轉換。

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Spirit/EPC Tech Talk

Spirit/EPC Tech Talk

Spirit公司的Marti McCurdy及EPC公司首席執行長Alex Lidow分享氮化鎵元件如何在性能及成本方面比矽元件優越,以及分享全球領導廠商如何與EPC公司合作,利用氮化鎵元件的優勢,開發出他們新一代的技術。

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設計雷射雷達應用及進一步應用於全自動電動車方程式E賽車

設計雷射雷達應用及進一步應用於全自動電動車方程式E賽車

eGaN FET(及目前的積體電路)之可以應用於全自動車輛的雷射雷達系統,以及全自動電動賽車,是因為這些元件可以實現高很多的解析度(由於具備超短雷射脈衝)、更快速的圖像速度(由於短雷射脈衝),及可以準確地看得更遠(由於在超高電流時可以實現快速雷射脈衝)。

Planet Analog
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EPC公司於PCIM Asia 2018 與功率設計工程師交流無線電源及雷射雷達技術的發展和應用

EPC公司於PCIM Asia 2018 與功率設計工程師交流無線電源及雷射雷達技術的發展和應用

矽基增強型氮化鎵場效應電晶體及積體電路的領先供應商宜普電源轉換公司(EPC)於中國上海與功率管理工程師會面並討論關於1)針對大於30 W功率高度諧振無線功率接收器、內建同步整流FET的E類整流器; 及2)採用eGaN® FET、120 A、少於10納秒脈衝及佔板面積小於3平方釐米的千瓦級雷射驅動器。

我們誠摯邀請工程師蒞臨中國上海,出席我們於2018年6月26日(星期二)上午10時至10時50分、在1099號國展路上海世博展覽館1層2號展館內舉行的PCIM Asia 2018研討會的演講。

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How eGaN FETs power LIDAR

How eGaN FETs power LIDAR

LIDAR is presently a subject of great interest, primarily due to its widespread adoption in autonomous navigation systems for vehicles, robots, drones, and other mobile machines. eGaN devices are one of the main factors in making affordable, high performance LIDAR possible in a small form factor thus further fueling the LIDAR revolution.

EDN
By John Glaser
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The Growing Ecosystem for eGaN FET Power Conversion

The Growing Ecosystem for eGaN FET Power Conversion

In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs.

Power Systems Designs
By Edward A. Jones, Michael de Rooij, and David Reusch
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eGaN FET-Based Synchronous Rectification

eGaN FET-Based Synchronous Rectification

As GaN-on-Si becomes more common in DC-DC converter designs, questions often arise from experienced designers about the impact of the unique characteristics of GaN transistors when used as synchronous rectifiers (SRs). In particular, the third quadrant off-state characteristics, better known as “body diode” conduction in Si MOSFETs, which is activated during converter dead-time, is of interest. For this article, the focus will be on the similarities and differences of Si MOSFETs and eGaN® FETs when operated as a “body diode” and outline their relative advantages and disadvantages.

Bodo’s Power Systems
By David Reusch & John Glaser
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Simultaneously Power (or Charge) Cell Phones to Laptops Wirelessly with EPC’s Complete Class 4 Transmitter Paired with A Regulated Category 5 AirFuel Alliance Compatible Wireless Power Demo Kit

Simultaneously Power (or Charge) Cell Phones to Laptops Wirelessly with EPC’s Complete Class 4 Transmitter Paired with A Regulated Category 5 AirFuel Alliance Compatible Wireless Power Demo Kit

Superior characteristics of eGaN® FETs and integrated circuits, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, AirFuel™ wireless power transfer systems.

EL SEGUNDO, Calif.— May 2018 — Efficient Power Conversion Corporation (EPC) today announces the availability of a complete class 4 wireless power kit, the EPC9129. The system can transmit up to 33 W while operating at 6.78 MHz (the lowest ISM band). The kit comes complete with two receivers, each with a regulated output − one capable of 5 W capable and a second capable of delivering 27 W at 19 V.

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Efficient Power Conversion (EPC) Announces Spirit Electronics as Distribution Partner for Defense and Aerospace Market

Efficient Power Conversion (EPC) Announces Spirit Electronics as Distribution Partner for Defense and Aerospace Market

Spirit Electronics now provides distribution support to assist customers in adopting eGaN® FETs and ICs for leading-edge power conversion systems in the defense and aerospace market.

EL SEGUNDO, Calif.— May 2018 — To support its accelerating growth in the defense and aerospace markets, Efficient Power Conversion Corporation (EPC) is proud to announce the appointment of Spirit Electronics as a distribution partner focusing on these key market segments.  Spirit Electronics, in operation since 1979 and located in Phoenix, Arizona and Irvine, California, supplies products and services to the Department of Defense, aerospace, and telecommunication industries.  

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EPC to Showcase High Power Density DC-DC Conversion for Computers and Cars, as well as Multiple High Frequency Applications Using eGaN FETs and Integrated Circuits at PCIM Europe 2018

EPC to Showcase High Power Density DC-DC Conversion for Computers and Cars, as well as Multiple High Frequency Applications Using eGaN FETs and Integrated Circuits at PCIM Europe 2018

Efficient Power Conversion (EPC) will exhibit live demonstrations at PCIM Europe 2018 showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.

EL SEGUNDO, Calif. — May 2018 — The EPC team will be delivering five technical presentations on gallium nitride (GaN) technology and applications at PCIM Europe 2018 in Nuremberg, Germany from June 5th through the 7th. In addition, in Hall 7, Stand 539, the company will exhibit its latest eGaN® FETs and ICs in customers’ end products that are enabled by eGaN technology.

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Evaluation of measurement techniques for high speed GaN transistors

Evaluation of measurement techniques for high speed GaN transistors

The increase in switching speed offered by GaN transistors requires good measurement technology, as well as good techniques to capture important details of high-speed waveforms. This article focuses on how to leverage the measurement equipment for the user’s requirement and measurement techniques to accurately evaluate high performance GaN transistors. The article also evaluates high bandwidth differential probes for use with non-ground-referenced waveforms.

EDN Network
By Suvankar Biswas , David Reusch & Michael de Rooij
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宜普電源轉換公司(EPC)於2018年WiPDA寬能隙功率半導體元件及應用論壇與工程師作技術交流

宜普電源轉換公司(EPC)於2018年WiPDA寬能隙功率半導體元件及應用論壇與工程師作技術交流

EPC公司的“2018年中國路演”繼續展開行程,於5月17至19日在西安舉行的首次亞太區WiPDA研討會中與工程師分享最新的氮化鎵技術發展。

宜普電源轉換公司“2018年中國路演”於3月14日在深圳舉行的首屆AirFuel無線充電大會暨開發者論壇出發,繼而由其首席執行官兼共同創辦人Alex Lidow於3月15日在上海由中國SEMI舉辦的功率及功率暨化合物半導體論壇作開幕專題演講。路演的下一站是於5月17-19日在西安舉行的首次亞太區WiPDA論壇,與工程師作技術交流並展示其最新的eGaN®元件。之後,我們將於6月26–28日在上海舉行的亞太區PCIM會議演講,與工程師分享採用氮化鎵元件的無線電源傳送應用和面向全自動汽車的雷射雷達系統。

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基於氮化鎵(eGaN)技術的汽車應用即將到來

基於氮化鎵(eGaN)技術的汽車應用即將到來

宜普電源轉換公司(EPC)的兩個車用氮化鎵電晶體成功通過了國際汽車電子協會所制定的AEC Q101離散元件可靠度驗證測試

宜普電源轉換公司宣佈其兩個車用氮化鎵(eGaN®)元件成功通過AEC Q101測試認證,可在車用及其他嚴峻環境實現多種全新應用。EPC2202EPC2203是採用晶圓級晶片尺寸封裝、80 VDS 的離散電晶體。面向嚴峻的車用環境的多個離散電晶體及積體電路也將在不久的未來推出。

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EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon

EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon

The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package.  These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives.

EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.

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EPC at APEC 2018 by EE Online

EPC at APEC 2018 by EE Online

EPC CEO & Co-Founder, Alex Lidow gives Lee Teschler from EE World Online a tour of the EPC booth at APEC 2018 where EPC demonstrations included a high-power density 48 V – 12 V non-isolated converter capable of delivering over 700 W. In addition, a range of 3-D real-time LiDAR imaging sensors used in autonomous vehicles were displayed. Also, a single desktop implementing a high power resonant wireless charging solution capable of generating 300 W to wirelessly power a wide range of devices including cell phones, notebook computers, monitors, wireless speakers, smart watches, and table lamps.

View videos below.

How eGaN Transistor Technology Improves LiDAR Performance
Why Gate Drivers are Joining eGaN Transistors on the Same Chip
Graphics-Intensive Applications Benefit From Power-Dense eGaN® DC-DC Converters
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