雜談GaN技術

At PCIM Asia 2026, EPC presented its Gen 8 monolithic GaN power stage for AI processor power delivery.

Developed by EPC for high-frequency multiphase POL / IVR applications on next-generation AI processors, Gen 8 integrates half-bridge power switches, high-speed gate drivers, bootstrap circuitry, level shifting, and logic on the same GaN die. With lower charge, faster switching, and stronger overvoltage capability, it targets operation from a 6 V input at frequencies approaching the 10 MHz class. The system-level significance is not simply a lower component count: integration reduces drive-loop parasitics and noise sensitivity, while allowing the control side to use high-speed processes better suited to extensive digital functionality, enabling more phases and denser processor-side placement.

在持續演進的電力電子世界中，效率、尺寸與可靠性始終是最重要的關鍵指標。EPC 以其最新創新產品 EPC2366 樹立了全新的產業標竿。這款 40 V GaN FET 採用超緊湊的 3.3 × 2.6 毫米 QFN 封裝，充分展現了功率半導體技術的最前沿。

在接受 MakerPROTW 特約編輯 Judith Cheng 的專訪時，Efficient Power Conversion（EPC）共同創辦人暨執行長 Alex Lidow 介紹了公司目前已投入量產的第七代氮化鎵（GaN）技術，以及該技術對傳統上由矽 MOSFET 主導的低電壓應用所帶來的影響。隨著 40 V 的 EPC2366 等元件已進入大量生產，EPC 正將 GaN 定位為 40 V 及以下電壓範圍內的主流選項——此市場規模甚至超過 GaN 最初取得突破的 100 V 區段。