雜談GaN技術

Modern data centers’ power requirements are changing dramatically due to the rapid growth of AI workloads. As GPU platforms such as NVIDIA’s Vera Rubin push rack power from 200 kW toward the 1-MW level, traditional 48-V busbar power distribution becomes physically and economically impractical because of massive conduction losses. Current can exceed 4,000 A in the 48-V busbar before reaching the server boards.

To address these increasing current levels, the industry is transitioning to an 800-Vdc power distribution architecture. This approach enables high-voltage dc to be delivered directly to server boards, significantly increasing power capacity while reducing copper requirements and improving overall efficiency. One of the major challenges in the new 800-V ecosystem is the efficient conversion of high-voltage dc to the intermediate bus voltages of 12.5 V or 6 V required by POL voltage regulators powering AI processors, without needing an additional 800-V to 48-V conversion stage. Traditional single-stage topologies with such high stepdown ratios result in transformer complexity and limited efficiency.

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GaN FET 與任何其他類型的電晶體一樣，在開關過程中會耗散 功率 ，並以熱量的形式表現出來。如果超過特定的溫度限制，可能會損壞這些元件。因此，熱管理是轉換器設計中的重要環節。

作者：Maurizio Di Paolo Emilio，《Data Centre Digest》特約編輯

氮化鎵（GaN）正進入一個新的發展階段。在光達、衛星電源、快速充電器和AI電源供電等應用中確立自身地位之後，這項技術正越來越多地邁向低電壓、大電流應用領域，而在這些應用中，切換速度、低導通損耗和功率密度至關重要。

Encouraging developers to design high-performance Class-D audio amplifiers leveraging GaN FETs, Efficient Power Conversion (EPC) has launched the new EPC9192 reference design, enabling high power and high efficiency Class-D audio amplifiers in a modular design. audioXpress reviews the EPC9192 to confirm the performance capabilities of EPC’s 200V, EPC2307 eGaN FETs in a ground-referenced, split dual supply single-ended (SE) design, rated to deliver 700W per channel into a 4Ω load.

Qian Luo, Author, WBG TechnoBite

In humanoid robot wrists and dexterous hands, as well as compact drone propulsion systems, motor drives are moving from external controller boards into the actuator itself. At that point, the inverter is no longer an independent unit that simply delivers three-phase current to the motor; it must share a tightly constrained space with the motor, position sensor, mechanical structure, and thermal path.

This changes the design priorities for compact motor drives. Continuous current and torque capability certainly depend on the power devices, but where the DC-link capacitors can be placed, whether heat can be transferred into the housing or airflow, and how sensing and protection signals are routed all shape the final system performance.

As AI infrastructure, humanoid robots, drones, autonomous machines and space systems push power electronics toward higher efficiency and power density, gallium nitride (GaN) is moving into increasingly demanding applications. At PCIM Asia 2026 in Shenzhen, Efficient Power Conversion (EPC) will showcase its latest GaN technology while offering a preview of where the company believes the technology is heading next. The event, taking place August 26–28, will be particularly relevant for designers working on AI power delivery and intelligent motion systems. EPC will demonstrate its GaN portfolio across the power-conversion chain, from 800 VDC distribution to point-of-load conversion, while its roadmap points toward two developments with potentially broader implications: Gen 8 GaN for ultra-high-frequency, low-voltage power conversion and Trinity, EPC’s approach to highly integrated GaN motor drives.

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氮化鎵（GaN）正在推動功率電子技術變革，應用範圍從低電壓馬達驅動擴展至百萬瓦級人工智慧資料中心。在本次訪談中，EPC 詳細介紹了第七代以及即將推出的第八代氮化鎵元件如何在電容、面積和功率密度等方面實現相較矽元件最高達 5 倍的優勢，從而開拓 40 V 及以下市場，並為 GPU 實現先進的負載點電源轉換。討論內容涵蓋採用 48 V 匯流排的高效能機器人、面向 800 V 系統的多電平 ISOP 拓撲、透過參考設計實現快速原型開發，以及氮化鎵在太空應用中日益重要的作用。