Microinverters and power optimizers are widely utilized in modern solar panels to maximize energy efficiency and conversion. Such topologies and implementations usually require a minimum of 25 years of lifetime, which is becoming a critical challenge for market adoption. Low-voltage gallium nitride (GaN) power devices (VDS rating < 200 V) are a promising solution and are being used extensively by an increasing number of solar manufacturers.

In this article, a test-to-fail approach is adopted and applied to investigate the intrinsic underlying wear-out mechanisms of GaN transistors. The study enables the development of physics-based lifetime models that can accurately project the lifetimes under the unique demands of various mission profiles in solar applications.

How2Power
August, 2023
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宜普電源轉換公司 (EPC) 推出150 V、6 mΩ EPC2308 GaN FET，讓高功率密度應用實現更高的性能和更小的解決方案，包括 DC/DC轉換、AC/DC SMPS和充電器、太陽能優化器和微型逆變器，以及馬達控制器。

EPC是增强型氮化鎵 (eGaN®)功率FET和IC領域的全球領導者，新推採用更耐熱的QFN封裝且可立即發貨的150 V EPC2308氮化鎵元件，用於電動工具和機器人的馬達控制器、用於工業應用的80 V/100 V高功率密度 DC/DC轉換器、用於充電器、適配器和電源供電的28V~54V同步整流器、智能手機USB快速充電器，以及太陽能優化器和微型逆變器。

GaN FETs in thermally enhanced QFN packages offer higher performance and smaller solution size for high power density applications, including DC-DC conversion, AC/DC chargers, solar optimizers and microinverters, motor drives, and Class D Audio

Power Electronics News
September, 2022
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