欢迎您与氮化镓（GaN）技术专家一起在CES的EPC虚拟展台中，探索基于更高效、更小尺寸和更低成本的氮化镓场效应晶体管和集成电路的解决方案，如何增强消费电子产品的功能和性能。

宜普电源转换公司（EPC）宣布在1月11日至14日举行的全数字国际消费电子展（CES）展示其eGaN^®技术如何改变了消费电子应用的游戏规则并提高产品性能，包括全自动驾驶汽车、电动交通、无人机、机器人和48 V功率转换等应用。

Gallium nitride (GaN) transistors have been in mass production for over 10 years. In their first few years of availability, the fast switching speed of the new devices – up to 10 times faster than the venerable Si MOSFET – was the main reason for designers to use GaN FETs. As the pricing of GaN devices normalized with the MOSFET, coupled with the expansion of a broad range of devices with different voltage ratings and power handling capabilities, much wider acceptance was realized in mainstream applications such as DC-DC converters for computers, motor drives for robots, and e-mobility bikes and scooters. The experience gained from the early adopters has led the way for later entrants into the GaN world get into production faster. This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their GaN-based designs at the lowest cost. The three topics are: (1) layout considerations; (2) thermal design for maximum power handling; and, (3) EMI reduction techniques for lowest cost.

Bodo’s Power Systems
January, 2021
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Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles. The goal of qualification testing is to have zero failures out of a large group of parts tested. By testing parts to the point of failure, an understanding of the amount of margin between the data sheet limits can be developed, but more importantly, an understanding of the intrinsic failure mechanisms of the semiconductor can be found.

IEEE Power Electronics Magazine
December, 2020
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An automotive application using GaN power devices in high volume is lidar(light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discus a novel testing mechanism developed by EPC to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

Power Systems Design
December, 2020
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EPC introduces the 40 V, 3 milliohm EPC2055 eGaN^® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — December 2020 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. 

EL SEGUNDO, Calif. — December 2020 — BrightLoop Converters has greatly reduced the size, cost and improved reliability of its latest BB SP DC-DC buck converters thanks to Efficient Power Conversion Corporation’s (EPC) EPC2029 enhancement-mode gallium nitride (eGaN^®) FET transistors. By switching from silicon (Si) transistors to gallium nitride (GaN), BrightLoop was able to increase the switching frequency of their design from 200 kHz to 600 kHz, while keeping the same efficiency. This design change increased the power density of the solution by a factor of approximately two and this resulted in lower cost by enabling the implementation of a smaller enclosure.

EPC’s EPC2029 is an 80 V, 48 A eGaN^® FET featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

面向高功率密度且低成本的DC/DC转换，EPC9151功率模块利用EPC2152 ePower™功率级实现性能更高和尺寸更小的解决方案。

宜普电源转换公司（EPC）宣布推出EPC9151，这是一款300 W、双向、超小尺寸的1/16砖型DC/DC降压转换器模块，其尺寸仅为33 mm x 22.9 mm (1.3”x 0.9”)。EPC9151采用Microchip公司的数字信号控制器（dsPIC33CK）和EPC公司的 ePower™ 功率级集成电路（EPC2152），于300 W、48 V/12 V的转换器中，可以实现95％以上的效率，而且可以在这个可扩展的两相设计中增加相数，使得功率可以更高。

Gallium nitride power device technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than everachievable before. GaN power devices can also exhibit superior radiation tolerance compared with Silicon MOSFETs depending upon their device design.

Power Electronics Europe
December, 2020
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宽禁带（WBG）半导体诸如碳化硅（SiC）和氮化镓（GaN）是功率转换的技术前沿。它们为设计工程师带来具有全新的频谱、功率密度和外形尺寸的器件。

EDN Editorial Advisory Board
2020年12月
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宜普电源转换公司（EPC）是增强型硅基氮化镓（eGaN^®）功率场效应晶体管和集成电路的全球行业领先供应商，其首席执行官兼共同创办人Alex Lidow博士于2020全球电子成就奖（WEAA）评选中，荣获年度杰出贡献人物奖。

全球电子成就奖旨在评选并表彰对推动全球电子产业创新做出杰出贡献的企业和管理者，以及在业界处于领先地位的产品。由ASPENCORE全球资深产业分析师组成的评审委员会以及各地区（亚洲、美国、欧洲）网站用户群进行综合评定共同评选出得奖者。

宜普电源转换公司（EPC）推出170 V、6.8毫欧的EPC2059氮化镓场效应晶体管(eGaN^®FET），相比目前用于高性能48 V同步整流的器件，EPC为设计工程师提供更小型化、更高效、更可靠且成本更低的器件。

宜普电源转换公司是增强型硅基氮化镓（eGaN）功率场效应晶体管和集成电路的全球领先供应商，旨在提高产品性能而同时降低可发货的氮化镓晶体管的成本，推出EPC2059(6.8 mΩ、170 V)氮化镓场效应晶体管，是100 V ~ 200 V解决方案系列的最新产品，该系列适用于广阔的功率级并备有不同价格的器件可供选择，满足市场对48 V ~ 56 V服务器和数据中心产品，以及一系列用于高端计算的消费类电源应用（包括游戏PC，LCD / LED电视和LED照明）不断增长的需求。

Stefan Werkstetter appointed as New Director of Sales for EMEA to focus on assisting customers in the adoption of eGaN^® FETs and Integrated Circuits for applications including DC-DC, lidar, motor control, and other leading-edge power conversion systems

EL SEGUNDO, Calif. — November 2020 — To support the continued adoption of gallium nitride (GaN) FETs and Integrated Circuits in the European market, Efficient Power Conversion Corporation (EPC) is pleased to announce the appointment of Stefan Werkstetter as Director, Sales EMEA.

氮化镓（GaN）技术已实现重大改进，而且它极具成本效益，可以替代MOSFET器件。 从2017年开始，采用氮化镓器件的48 V DC/D转换器开始成为市场上重要的应用。 各种拓扑诸如多相和多级降压转换器，实现具备更高效率的全新解决方案，可以满足IT和车载市场的能源需求。

Power Electronics News
2020年11月
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Gallium nitride FETs have continued to gain traction in many power electronic applications, but GaN technology is still in the early part of its life cycle. While there is much room to improve basic FET performance figures of merit an even more promising avenue is the development of GaN power ICs.

Bodo’s Power Systems
November, 2020
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The ultimate aim of Artificial Intelligence is to provide machines the ability to operate autonomously. One such area which is projected to grow exponentially over the next decade is Autonomous Vehicles. With Artificial Intelligence coupled with the rapid advances in electronics and computer technology, the word driverless will soon take over the roads.

AI Time Journal
October, 2020
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THIEF RIVER FALLS, Minnesota, USA – Digi-Key Electronics, the leading global electronic components distributor, announced that it has partnered with Efficient Power Conversion Corporation (EPC) to host a webinar on how to harness the power of eGaN FETS and ICs for motor drives. The webinar will take place on October 28 at 8 a.m. PST.

Register for the Harness the Power of GaN for Smaller, Lighter, More Precise Motor Drives webinar at EPC’s webinar page

基于宜普电源转换公司（EPC）超高效eGaN^® FET的两种高功率密度DC/DC转换器，推动超薄笔记本电脑、显示器、高端游戏系统和其它纤薄型消费电子产品实现高效解决方案

宜普电源转换公司（EPC）宣布推出用于48 V DC/DC转换的EPC9148和EPC9153演示板。 EPC9153是一款250 W超薄电源模块，采用简单且低成本的同步降压配置，峰值效率高达98.2％，其元件的最大厚度为6.5 毫米。EPC9148使用多电平拓扑结构，元件的最大厚度小于4 毫米，峰值效率为98％。

分立式功率晶体管，无论它是硅基还是硅基氮化镓，都进入了最后发展阶段。 硅基氮化镓集成电路可以在较小的占板面积内实现更高的性能，并且显著降低成本和减少所需的器件工程。 本文详细阐析氮化镓器件的崛起和硅基氮化镓集成电路如何重新定义功率转换。

Bodo’s Power Systems
2020年10月
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新一代100 V 氮化镓场效应晶体管（eGaN^® FET）是48 V_OUT同步整流、D类音频放大器、汽车信息娱乐及激光雷达系统的理想功率器件。

增强型硅基氮化镓（eGaN）功率场效应晶体管和集成电路的全球领导厂商宜普电源转换公司（EPC）最新推出的两款100 V eGaN FET（EPC2218及EPC2204），性能更高并且成本更低，可立即发货。采用这些先进氮化镓器件的应用非常广阔，包括同步整流器、D类音频放大器、汽车信息娱乐系统、DC/DC转换器（硬开关和谐振式）和面向全自动驾驶汽车、机械人及无人机的激光雷达系统。

Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles, with the goal of demonstrating zero failures. By testing parts to the point of failure, an understanding of the amount of margin beyond the data sheet limits can be developed, but more importantly, an understanding of the intrinsic failure mechanisms of the semiconductor can be found.

Bodo’s Power Systems
September, 2020
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