宜普电源转换公司(EPC)的车规级并通过AEC Q101认证的氮化镓晶体管系列增添全新成员 -- 经过优化的15 V EPC2216，实现不昂贵的高性能激光雷达系统。

宜普公司宣布15 V的EPC2216成功通过AEC Q101认证，专为需要高准确性的激光雷达应用而设计，例如全自动驾驶汽车，以及其它的飞行时间（ToF）应用，包括人面识别、自动化仓库、无人机及地图制作。

GaN theory and applications, such as lidar, DC-DC conversion, and wireless power using gallium nitride FETs and ICs, form the focus of this third edition of “GaN Transistors for Efficient Power Conversion”

EL SEGUNDO, CA – October 2019 – Efficient Power Conversion Corporation (EPC) announce the publication of the third edition of “GaN Transistors for Efficient Power Conversion,” a textbook written by power conversion industry experts and published by John Wiley and Sons. 

Efficient Power Conversion (EPC) provides gallium nitride-based power devices for Solace Power’s 250 W wireless power platforms to enable higher power solutions and faster design cycle times.

EL SEGUNDO, Calif.— September 2019 — EPC announces collaboration with Solace Power, a leading wireless power, sense and data company, to enable 250-watt wireless power solutions designed for 5G, aerospace, automotive, medical, and industrial applications. Solace Power’s intelligent wireless platform use EPC’s 200 V enhancement-mode gallium nitride (eGaN^®) power transistors. This modular platform shares the same Equus™ architecture and enables up to 250 Watts of transmitted power with superior six degrees of spatial freedom.

氮化镓技术为业界实现以前不可能达到的目标。EPC公司的Alex Lidow阐析医疗护理如何更好地利用氮化镓技术，实现重大的改进。

Electronic Specifier
2019年8月
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Alex Lidow has deep roots in the electronics industry. His father and grandfather founded International Rectifier in 1947. Alex eventually ran the company himself for 12 years. He is currently the CEO of EPC, a company that manufactures gallium nitride-based power transistors and integrated circuits. These products are now found in lidar systems for autonomous vehicles, in 4G/LTE base stations, in DC-DC converters for servers and satellites, and in a wide variety of medical products.

EE Times on Air
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GaN transistors, with favorable figures of merit (FOM) for 48 V applications, can provide a reduction in size, weight, and bill of material costs. This article presents a five-phase, fully regulated, bidirectional 48 V to 12 V DC-DC converter. An advancedthermalmanagement solution suitable for use with eGaN FETs results in a system that can provide 3kW of power at an efficiency exceeding 97.5% into a 14.5 V battery.

Power Systems Design
July, 2019
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Small satellites bring a more cost-effective approach to low-Earth-orbit (LEO) missions, helping to deliver low-cost internet access across the globe. For this application, GaN FETs partnered with a radiation tolerant pulse width modulation controller and GaN fet driver allow more efficient switching, higher frequency operation, reduced gate drive voltage and smaller solution sizes compared to the traditional silicon counterparts.

Electronics Weekly
July, 2019
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根据预测，到2025年，我们的数据将会超过175 zettabyte。当发明了 5G并将最早于2020年在日本举行的奥运采用、以及通过人工智能（AI）及机器学习（ML）的发展，建立数据中心和其部署、以及提升目前较旧的数据中心的效能，将进入突飞猛进的时代。

我深信氮化镓（GaN）功率晶体管是数据中心功率架构的最理想元件，因为需要小型化、高效及快速开关的元件。氮化镓器件在具48 VIN的所有拓扑，都可以实现最高的效率。

EDN
2019年6月
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EPC及Spirit Electronics公司携手为客户提供领导业界的氮化镓功率器件的特定制造批次的数据服务。

宜普电源转换公司（EPC）宣布与Spirit Electronics公司携手为客户提供一系列氮化镓功率器件的特定批次的数据。

宜普公司首席执行官及共同创办人Alex Lidow说,”Spirit Electronics具备与国防及宇航客户的丰富合作经验，我们携手为严峻应用环境所需，为客户增值而提供氮化镓（eGaN）功率半导体的特定批次的数据包。”

目前的氮化镓场效应晶体管在尺寸及性能方面以飞快的速度发展，而目前为业界树立基准的氮化镓器件的性能还可以提升多300倍。

最早采用氮化镓器件的应用是利用氮化镓的超快速开关速度，例如面向全自动驾驶汽车和无人机的激光雷达系统、机械人，以及4G/LTE基站。氮化镓器件的产量一直在增加，而其价格跟开关速度更慢、尺寸更大型和日益陈旧的MOSFET器件相约。因此，目前正是氮化镓器件正面攻击MOSET的时候！。

Bodo’s Power System
2019年6月
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为了使得客户易于集成功率系统，宜普电源转换公司（EPC）为客户提供领导业界的氮化镓功率器件的晶圆。

EPC公司宣布推出领导业界的增强型氮化镓器件的晶圆，使得客户易于集成功率系统。EPC公司的氮化镓场效应晶体管（eGaN^® FET）及集成电路一直以来都是以单个并包含锡条或锡球的芯片级器件出售。

EPC proudly announces the induction of Dr. Alex Lidow, CEO and co-founder into the ISPSD Hall of Fame 2019

El Segundo, Calif. – May 2019 – Efficient Power Conversion (EPC) Corporation proudly announces that Dr. Alex Lidow, CEO and co-founder, is inducted into the ISPSD Hall of Fame 2019. This prestigious honor is bestowed upon an honored contributor to advancing power semiconductor technology and sustaining the success of ISPSD. This Hall of Fame award was announced on May 20^th, 2019 at 31^st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2019 at the Marriott Parkview Hotel, Shanghai, China.

Unleash the full potential of your solutions with jjPlus wireless technologies!

TAIPEI, Taiwan, May 21, 2019 — jjPLus Corp. a Taiwan design manufacturer of high quality wireless communications and wireless power embedded solutions, will showcase the next generation Wireless Power Transfer as well as new WiFi solutions at COMPUTEX 2019 in Nangang Exhibition Center, Hall 1, at K1024 booth during May 28 - June 1 in Taipei, Taiwan..

eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters.

EDN
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From the heart of Silicon Valley comes a new buzzword. Gallium nitride is the future of power technology. Tech blogs are touting gallium nitride as the silicon of the future, and you are savvy enough to get in on the ground floor. Knowing how important gallium nitride is makes you a smarter, better consumer. You are at the forefront of your peer group because you know of an up and coming technology, and this one goes by the name of gallium nitride.

HACKADAY
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EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.

For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.

Compound Semiconductor
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This year’s PCIM Europe was attended by a record number of visitors, over 12,000. Over half (54%) were from outside Germany. They came to see over 500 exhibitors and while the subject matter was diverse and wide-ranging, there were some themes that emerged. GaN and SiC jostled for attention at this year’s PCIM Europe. Showing the potential that GaN has already realised, Efficient Power Conversion (EPC) had a stand that was well-stocked with examples of the eGaN FET technology that the company introduced in 2009.

Electronic Specifier
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宜普电源转换公司（EPC）将于欧洲PCIM展会现场演示优越的氮化镓技术如何提升多种应用所需的电源供电效率，包括运算、通信及运输行业。

EPC团队将于5月7日至9日在德国的Nuremberg、欧洲PCIM展览及研讨会的会场，进行7场关于氮化镓（GaN^® ）技术及应用的演讲，并于7号馆、335展览摊位与工程师会面并分享最新的、基于eGaN FET及集成电路的终端客户产品。

宜普电源转换公司（EPC）进一步扩大车规级氮化镓产品系列 – 全新成员是面向具有高分辨率的激光雷达系统、80 V的EPC2214氮化镓场效应晶体管，该元件成功通过国际汽车电子协会所制定的AEC Q101应力测试认证。

宜普电源转换公司（EPC）宣布再多一个车用氮化镓(eGaN)器件（80 V的EPC2214）成功通过AEC Q101测试认证，可在车用及其它严峻环境支持多种全新应用。

宜普电源转换公司（EPC）推出两个全新100 V氮化镓器件，可以支持服务器及汽车应用的48 V转换的要求。 我将在处理器、车用及能量存储系统等方面探讨48 V服务器的功率转换解决方案（可参考我的文章 “双向DC/DC电源供电: 我们应该如何取向？”），未来将在EDN文章中看到。氮化镓功率晶体管必需是这些不同架构的一部分 -- 我相信没有其它更优越的元件可以替代氮化镓器件了 。

Planet Analog
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