中压氮化镓场效应晶体管（eGaN FET）的成本在三年前已经比等效额定功率MOSFET器件的成本更低。当时，EPC公司决心利用氮化镓场效应晶体管的性能及成本效益优势，积极研发及支持48 V输入或输出的应用。车用及计算机应用的48 V 转换逐渐成为全新的架构，也成为了功率系统的全新标准。

Power Systems Design
2020年3月31日
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继第一至第十阶段可靠性测试报告后，EPC公司的第十一阶段可靠性测试报告进一步丰富知识库。此报告对受测器件进行超过1230亿元件-小时应力测试，并且展示氮化镓器件的稳定性是硅功率器件所不能实现的。

EPC公司发布第十一阶段可靠性测试报告，与工程师分享受测器件如何实现优越的现场可靠性的策略 - 在广阔测试条件下，采用失效性测试器件（test-to-fail）的反复测试方法，从而知道如何构建更稳固的产品以达到应用所需，例如面向全自动驾驶车辆的激光雷达、LTE通信基站、汽车的车头灯及卫星等应用。

宜普电源转换公司（EPC）依据《氮化镓晶体管–高效功率转换器件》第三版教科书的增订内容，更新了首7个、合共14个教程的视频播客，与工程师分享采用氮化镓场效应晶体管及集成电路的理论、设计基础及应用，例如激光雷达、DC/DC转换及无线电源等应用。

宜普电源转换公司（EPC）更新了其广受欢迎的“如何使用氮化镓器件”的视频播客系列。该视频系列的内容是依据最新出版的《氮化镓晶体管–高效功率转换器件》.第三版教科书的内容制作。合共14个教程的视频播客系列旨在为功率系统设计工程师提供技术基础知识及针对专有应用的工具套件，从而让工程师学习如何采用氮化镓晶体管及集成电路，设计出更高效的功率转换系统。

An integrated circuit made using GaN-on-Si substrates has been in production for over five years. The ultimate goal is to achieve a single component IC that merely requires a simple digital input from a microcontroller and produces a power output that drives a load efficiently, reliably under all conditions, in the smallest space possible, and economically. Discrete power transistors, whether silicon-based or GaN-on-Si, are entering their final chapter. Integrated GaN-on-Si can offer higher performance in a smaller footprint with significantly reduced engineering required.

IEEE Power Electronics Magazine
March 2020
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硅功率MOSFE追不上目前功率电子业界的演进步伐 -- 业界需要具备高效、高功率密度及细小的外型尺寸的器件。业界看到硅MOSFET已经达到它的理论极限，从而需要找出全新器件。氮化镓（GaN）是一种HEMT器件，具备附加增值的优势，被证明为可以支持全新应用的要求。

Power Electronics News
2020年3月25日
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宜普电源转换公司（EPC）推出全新集成电路(IC)系列的首个产品，为高功率密度应用诸如DC/DC转换、电机驱动及D类放大器，提供更高性能及更小型化的解决方案。

宜普电源转换公司（EPC）宣布推出80 V、12.5 A的功率级集成电路，专为48 V DC/DC转换而设计，用于具有高功率密度的运算应用及针对电动车的电机驱动器。

A recent design for an ultra-high speed, low-impedance pulse generator to evaluate oscilloscope probe performance and for determining the feasibility of an in-socket load for ASIC emulation using EPC eGaN™ FET, EPC2037 reveals just how fast these power devices are.

Signal Integrity
March 12, 2020
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从2010年3月起，氮化镓（GaN）功率器件已经实现高可靠性并进行量产。本章详细阐析如何测试出器件在何时开始失效，从而了解数据手册给出的器件工作条件，距离其工作极限值还有多少余量。而最重要的是，找出器件固有的失效机理，了解其失效的根本原因、恒常操作情况、温度、电气应力或机械应力等，从而找出产品在一般工作条件下，它的安全使用寿命。

Power Systems Design
2020年3月
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著名企业领袖 - 宜普电源转换公司（EPC）首席执行官Alex Lidow于2009年在市场推出第一个氮化镓晶体管。 经过了10年的氮化镓产品销售，DESIGN & ELEKTRONIK 杂志编辑Ralf Higgelke与Alex会面并谈论氮化镓技术的最新发展。

DESIGN & ELEKTRONIK杂志
2020年2月20日
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EPC9144演示板内的车规级EPC2216氮化镓场效应晶体管（eGaN^® FET）可支持大電流納秒脈衝的應用，提供高速的大电流脉冲 – 电流可高达28 A、脉宽则可低至1.2纳秒，从而使得飞行时间及flash激光雷达系统更准确、更精确及更快速。

宜普电源转换公司（EPC）宣布推出15 V、28 A大电流脉冲激光二极管驱动电路板（EPC9144）。

当硅技术已经到了性能极限，采用氮化镓器件的全新设计使得氮化镓技术得以继续普及。氮化镓器件的发展还是刚刚起步，它的性能将得以继续提升、集成电路也将会更具优势，以及将有更多全新的氮化镓产品推出市场。

Electronics Weekly
2019年12月
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于Venetian酒店的hospitality suite现场，EPC将为工程师展示改变世界的创新应用与氮化镓（GaN）技术如何共创全新领域。基于氮化镓器件的解决方案具备更高效、更小尺寸及更低成本等优势。

宜普电源转换公司（EPC）将在2020年1月7日至10日，于美国拉斯维加斯举行的国际消费电子展（CES 2020）为工程师展示eGaN^®技术的庞大潜力，它可以推动多种消费电子应用的发展，从而改变市场的游戏规则，包括全自动驾驶汽车、机器人、无人机、无线电源、世界第一流的音频系统及车载解决方案。

于CES 2020 展览，欢迎莅临Venetian酒店内的EPC演示套房，与氮化镓专家一起参观、学习及讨论氮化镓技术如何推动改变世界的创新设计的发展。

Smaller, faster, lower cost, and more integrated, GaN-on-Silicon devices have the confidence of designers across a spectrum of power conversion applications. In this article, Alex Lidow explains why it’s getting harder to avoid using GaN power transistors and ICs.

Electronic Specifier
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宜普电源转换公司首席执行官Alex Lidow 在是次硏讨会讨论氮化镓技术如何大大改善系統的效率、尺寸及成本，从而加快磁共振及AirFuel共振技术的普及。

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It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow. There are many reasons to use GaN-on-Si power transistors such as eGaN FETs, in telecoms, vehicles, healthcare and computing. Smaller, faster, lower cost, and more integrated, GaN-on-Si devices have spent a decade gaining the confidence and trust of designers across the spectrum of power conversion applications.

Electronic Specifier
November 20, 2019
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It’s okay to start using gallium-nitride (GaN) devices in your new designs. GaN transistors have become extremely popular in recent years. These wide-bandgap devices have been replacing LDMOS transistors in many power applications. For example, GaN devices are broadly being adopted for new RF power amplifiers used in cellular base stations, radar, satellites, and other high-frequency applications. In general, their ability to endure higher voltages and operate at frequencies well into the millimeter-wave (mmWave) range have them replacing traditional RF power transistors in most amplifier configurations.

Electronic Design
November, 2019
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This article discussed an oft forgotten or little-noticed part of the spacecraft enabling travel into outer space---power management in the space vehicle. Wide bandgap semiconductors like gallium nitride (GaN), silicon carbide (SiC), as well as diamond, are looking to be the most promising materials for future electronic components since the discovery of silicon. These technologies, depending upon their design, offer huge advantages in terms of power capability (DC and microwave), radiation insensitivity, high temperature and high frequency operation, optical properties and even low noise capability. Therefore, wide bandgap components are strategically important for the development of next generation space-borne systems. eGaN devices are quickly gaining momentum in the space industry and we will see many more applications for them by NASA and commercial contractors in future programs like Artemis and other programs in countries around the globe pursuing efforts into Space.

Power Systems Design
November, 2019
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Ahead of December’s Power Conference in Munich, Bodo Arlt took the opportunity to get an insight into Alex Lidow’s thoughts on where the GaN market is now and where he sees the potential applications for the future. Dr. Lidow is the CEO and Co-founder of Efficient Power Conversion (EPC).

Bodo’s Power Systems
November, 2019
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In support of a widening customer base in Europe, Efficient Power Conversion Corporation has expanded its technical leadership team to assist customers in the adoption of eGaN^® FETs and Integrated circuits for applications including DC-DC, Lidar, motor control, and beyond.

EL SEGUNDO, Calif. — October, 2019 — To support its accelerating design activity, and to provide local technical support to EPC’s customers in Europe, Efficient Power Conversion Corporation (EPC) is proud to announce that Marco Palma, a seasoned expert, has joined the EPC technical leadership team as Senior FAE Manager for Europe. 

氮化镓（GaN）及碳化硅（SiC）器件的价格下调，对客户而言，更为吸引。多家供应商推出基于氮化镓及碳化硅的功率半导体，摩拳擦掌，正在爆发新一轮的半导体大战，全速进攻传统硅基器件的市场份额。

Semiconductor Engineering
2019年10月
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