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APEC 2019视频

APEC 2019视频

宜普电源转换公司的基于氮化镓的器件乃前沿技术。在本视频,宜普公司的首席执行官Alex Lidow于APEC展会现场与 Alix Paultre分享多个design in项目,从而展示基于氮化镓的器件的各种优势。

EPC partners with Würth Elektronik eiSos to present Trilogy of Wireless Power Transfer

EPC partners with Würth Elektronik eiSos to present Trilogy of Wireless Power Transfer

The Trilogy of Wireless Power Transfer consists of three parts: Basics Principles of Wireless Power Transmission, Wireless Power Transfer Systems and Applications. The first part of the book explains the basic physical principles and the different methods of contactless power transmission. Furthermore, the leading standards are presented in this part. The second part describes wireless power transfer systems, the different topologies of wireless power transmission, the right selection of transmitter and receiver coils required to increase efficiency, and the selection of transistors, for instance. The third part is dedicated to practical applications. This includes applications within the scope of the Qi standard, as well as examples of proprietary solutions. An overview of EMI-relevant topics for closely and loosely coupled systems, as well as an example of a multimode wireless power transmission system round out the practical part. The authors of the "Trilogy of Wireless Power Transfer" are Cem Som, Division Manager Wireless Power Transfer at Würth Elektronik eiSos; and Dr. Michael de Rooij, Vice President Applications Engineering at Efficient Power Conversion Corporation, Inc. The book costs 19 euros and can be ordered from Würth Elektronik eiSos or through bookstores.

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硅已经死亡

硅已经死亡

宜普电源转换公司首席执行官兼共同创办人Alex Lidow于APEC 2019展览会的Ridley Engineering展览摊位进行演讲,题目是“硅已经死亡”。

PSDtv - EPC on Why Silicon is Dead at APEC 2019

PSDtv - EPC on Why Silicon is Dead at APEC 2019

In this episode of PSDtv Alex Lidow, Chief Executive Officer and Co-Founder of Efficient Power Conversion (EPC) is at APEC 2019 in Anaheim and discusses why their GaN on Silicon devices make Silicon now dead.

PSDtv
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Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion

Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion

EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion.

EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET.

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宜普电源转换公司(EPC)推出面向48 V DC/DC电源转换、马达控制及激光雷达应用的100 V氮化镓(eGaN)功率晶体管

宜普电源转换公司(EPC)推出面向48 V DC/DC电源转换、马达控制及激光雷达应用的100 V氮化镓(eGaN)功率晶体管

专为功率系统设计师而设的EPC2052功率晶体管是一种100 V、13.5 mΩ并采用超小型芯片级封装的晶体管,可实现74 A脉冲输出电流。面向48 V-12 V DC/DC功率转换器,这些新一代氮化镓场效应晶体管工作在500 kHz频率下,可实现超过97%的效率。如果工作在1 MHz时,则实现超过96%的效率。

宜普电源转换公司(EPC)宣布推出100 V的EPC2052氮化镓场效应晶体管,其占板面积只是2.25平方毫米、最大导通阻抗(RDS(on))为13.5 mΩ及脉冲输出电流高达74 A 以支持高效功率转换。

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It's Time to Rethink Power Semiconductor Packaging

It's Time to Rethink Power Semiconductor Packaging

When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall into six categories:

1. Can you make the package smaller?
2. Can you reduce the package inductance?
3. Can you make the product with lower conduction losses?
4. Can you make the package more thermally efficient?
5. Can you sell the product at a lower price?
6. Can you make the package more reliable?

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Powering graphics processors from a 48-V bus

Powering graphics processors from a 48-V bus

New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 VIN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions.

Power Electronic Tips
March, 2019
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Efficient Power Conversion (EPC) to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High-Frequency Applications Using eGaN Technology at APEC 2019

Efficient Power Conversion (EPC) to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High-Frequency Applications Using eGaN Technology at APEC 2019

EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.

EL SEGUNDO, Calif. — March 2019 — The EPC team will be delivering eleven technical presentations on gallium nitride (GaN) technology and applications at APEC 2019 in Anaheim, California from March 17th through the 21st. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology.

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The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
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宜普电源转换公司(EPC)的第十阶段可靠性测试报告的亮点是 车规级氮化镓器件超越AEC-Q101应力测试的认证标准

宜普电源转换公司(EPC)的第十阶段可靠性测试报告的亮点是 车规级氮化镓器件超越AEC-Q101应力测试的认证标准

第一至第九阶段可靠性测试报告后,EPC公司的 第十阶段可靠性测试报告进一步丰富知识库。此报告对超过30,000个元件进行了超过1,800万小时的应力测试后,没有器件发生故障。在过去的两年间,我们所付运的数百万个元件没有发生现场失效的情况。

宜普电源转换公司(EPC)发布第十阶段可靠性测试报告,成功通过车规级AEC-Q101应力测试认证。AEC-Q101认证要求功率场效应晶体管符合最高的可靠性标准,不仅仅要求器件符合数据表内所载的条件而没有发生故障,也同时要求在应力测试中,具有低漂移。请注意,EPC所采用的晶圆级芯片规模封装(WLCSP)也符合所有针对传统封装的测试标准,展示出该封装具备卓越性能之同时没有影响到器件的稳固性或可靠性。

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Efficient Power Conversion (EPC) to Sponsor Inaugural ‘GaN Con’ with Yole Développement (Yole) and SEMI Covering the Entire Power GaN Industry from Manufacturers to End Users

Efficient Power Conversion (EPC) to Sponsor Inaugural ‘GaN Con’ with Yole Développement (Yole) and SEMI Covering the Entire Power GaN Industry from Manufacturers to End Users

In this conference GaN market and technology status will be addressed and its future evolution will be debated by mixing visions from designers, manufacturers, and end users.

EL SEGUNDO, Calif. — January 2019 — Efficient Power Conversion (EPC) is joining forces with Yole Développement (Yole) and SEMI to sponsor the first ever ‘GaN Con,’ an industry networking event covering the entire power GaN industry from manufacturers to end users. The theme of GaN Con is “Power GaN: From promises to possible market explosion” and is focused on the emerging GaN market and the state-of-the-art for its underlying technology.

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GaN 的功率和演变- 第5部分:采用eGaN FET和集成电路构建低成本、高效的12 V - 1 V 负载点转换器

GaN 的功率和演变- 第5部分:采用eGaN FET和集成电路构建低成本、高效的12 V - 1 V 负载点转换器

氮化镓器件对提升主流应用的效率的贡献很大,例如在传统硅基12 V - 1 V负载点 DC/DC转换器。基于eGaN集成电路的12 V转到1 V、12 A负载转换器在5 MHz的频率下,可以实现78%峰值效率及1000 W/in3 功率密度,而成本则低于每瓦0.2美元。

Power Systems Design
2019年1月
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为什么采用氮化镓器件?

为什么采用氮化镓器件?

氮化镓技术已经成熟至可以挑战传统的硅技术。从2010年起,商用的低压硅基氮化镓功率器件实现了很多全新应用。具备高速开关性能的氮化镓器件也推动了全新市场的出现,例如激光雷达、包络跟踪及无线电源市场。这些全新应用有助供应链的开发、实现低制造成本及良好的器件可靠性记录。这一切对于比较保守的DC/DC转换器、AC/DC转换器及车载应用的设计工程师来说,是很好的理据,是时候开始对氮化镓器件进行评了。本文探讨加快采纳氮化镓器件的各项因素。

Electronics Weekly
2019年1月
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车规级eGaN FET使得激光雷达系统看到更清晰、更高效, 并且降低48 V车用功率系统的成本

车规级eGaN FET使得激光雷达系统看到更清晰、更高效, 并且降低48 V车用功率系统的成本

宜普电源转换公司(EPC)进一步扩大车规级氮化镓产品系列 – 再多两个产品成功通过国际汽车电子协会所制定的AEC Q101分立器件应力测试认证。

宜普电源转换公司(EPC)宣布再多两个车用氮化镓(eGaN)器件成功通过AEC Q101测试认证,可在车用及其它严峻环境支持多种全新应用。EPC2206EPC2212 是采用晶圆级芯片规模封装(WLCS) 、分别是80 VDS 和100 VDS的分立晶体管。

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氮化镓的强大推动力及演进 - 第四章:eGaN FET和集成电路为手术用的机械人带来精准的控制

氮化镓的强大推动力及演进 - 第四章:eGaN FET和集成电路为手术用的机械人带来精准的控制

本章讨论由于低压硅基氮化镓(GaN)器件具备超快速的开关速度,因此实现了很多全新应用的出现。这些应用推动了行业的改革,例如面向全自动驾驶汽车的激光雷达(lidar)、面向5G通信应用的包络跟踪,以及家用和用于办公室的大面积无线电源技术。此外,我们会探讨氮化镓功率器件如何为手术用的机械人带来精准的控制,从而推动了医疗行业的最新发展。

Power Systems Design
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宜普电源转换公司(EPC)于CES 2019展览展示 基于GaN技术的家居无线电源系统及针对全自动驾驶汽车的高分辨率激光雷达技术

宜普电源转换公司(EPC)于CES 2019展览展示 基于GaN技术的家居无线电源系统及针对全自动驾驶汽车的高分辨率激光雷达技术

EPC公司将于国际消费电子展CES® 2019 的hospitality suite展示基于氮化镓(GaN)器件的家居无线电源系统及应用于全自动驾驶汽车的、领先业界的激光雷达系统。

EPC公司将于2019年1月8日至11日在美国拉斯维加斯举行的国际消费电子展(CES 2019展示eGaN®技术如何实现两种改变业界游戏规则的消费电子应用 -- 分别是无线电源及应用于全自动驾驶汽车的激光雷达(LiDAR)。

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The Power and Evolution of GaN, Part 3: How to Build an Ultra-Fast High-Power Laser Driver using eGaN FETs - That Sees Farther, Better, and at a Lower Cost!

The Power and Evolution of GaN, Part 3: How to Build an Ultra-Fast High-Power Laser Driver using eGaN FETs - That Sees Farther, Better, and at a Lower Cost!

In the first article in this series, how gallium nitride (GaN)-on-silicon low voltage power devices have enabled many new applications, such as light detection and ranging (LiDAR), envelope tracking, and wireless power was discussed. In this article, more detail on one of these leading applications, LiDAR, will be explored. How GaN is being used to make LiDAR systems that see farther, with higher resolution, and at lower cost will be shown.

Power Systems Design
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EPC扩大亚洲团队,针对客户解决方案释放创新力量

EPC扩大亚洲团队,针对客户解决方案释放创新力量

作为为支持DC/DC、激光雷达(LiDAR)、无线电源应用等方面不断扩大的客户群进行扩展的一部分,宜普电源转换公司(EPC)扩大了其在亚洲的团队,增加的新成员将与整个亚太地区21个地区的客户保持密切联系。

2018年11月28日— 为了支持在亚太地区正在加速的销售增长,宜普电源转换公司(EPC)宣布扩大亚太地区的销售和FAE团队,以支持其不断扩大的客户群,积极获取全新的业务发展及抓住全新的市场商机。

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Gallium nitride is the silicon of the future

Gallium nitride is the silicon of the future

Last week, Anker debuted a tiny new power brick, crediting its small size with the component it uses instead of silicon: gallium nitride (GaN). It’s the latest example of the growing popularity of this transparent, glass-like material that could one day unseat silicon and cut energy use worldwide.

The Verge
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