EPC推出第二代200V及100mΩ功率晶体管

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EPC2014 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – August 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2014 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2014 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free.

The EPC9004 has been recognized by Bodo’s Power Systems as the Product of the Month in the September, 2011 issue of the magazine. The EPC9004 facilitates rapid design of high frequency switching power conversion systems based on the 200 V EPC2012 with a ready-made, easy to connect development board.

Bodo's Power Systems
September, 2011

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EPC2012 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – August 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2012 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2012 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free.

EPC9004 facilitates rapid design of high frequency switching power conversion systems based on the 200 V EPC2012 with a ready-made, easy to connect development board and well-documented engineering support materials.

EL SEGUNDO, Calif.—August 2011 — Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9004 development board to make it easier for users to start designing with EPC’s 200 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as solar microinverters, class D audio amplifiers, Power over Ethernet (PoE), and synchronous rectification.

高度集成的半桥栅极驱动器提高了高压应用的功率密度和效率

EEFocus

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We know Efficient Power Conversion (EPC) has commercialized enhancement-mode GaN-on-Si FETs, or eGaN FETs as EPC calls them, for more than a year now. Concurrently, it has been working with partners to realize dedicated drivers for its eGaN FETs, which offer lower RDS(ON) at higher voltages, lower gate charge, and no reverse recovery loss (QRR)—all these properties from a smaller die size than silicon. In essence, by comparison to silicon MOSFETs, the eGaN FETs offer a dramatic reduction in figures of merit or FOM.

By Ashok Bindra
How2Power
June, 2011

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GaN (Gallium-Nitride) FETs appear poised to eat into silicon FETs market share as switching devices for high-voltage power conversion circuits.

By Margery Conner
EDN
June 20, 2011

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National Semiconductor Corp. (NYSE:NSM) today introduced the industry’s first 100V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presents significant new challenges. National’s LM5113 driver integrated circuit (IC) eliminates these challenges, enabling power designers to realize the benefits of GaN FETs in a variety of popular power topologies.

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EL SEGUNDO, Calif-May 4, 2011 — Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN®) power FETs has won the Energy Technology Award issued as part of the prestigious EE Times Annual Creativity in Electronics (ACE) Awards. These awards celebrate the creators of technology who demonstrate leadership and innovation in the global industry and shape the world we which we live.

“We are very proud to have won the ACE Award. This award substantiates that EPC’s enhancement-mode GaN power transistors represent a major breakthrough in power conversion technology. We believe that performance from silicon-based MOSFETs has reached the end of the road and that eGaN technology will lead the way for continued increases in performance in power management.” said Alex Lidow, EPC’s co-founder and Chief Executive Officer.

Microsemi is working with Efficient Power Conversion (EPC) www.epc-co.com in the development of a complete line of high performance FETS for high reliability space and military applications. A jointly researched paper entitled "Enhancement Mode Gallium Nitride Characteristics Under Long Term Stress" will be presented at the Government Microcircuit Applications and Critical Technology Conference (GOMAC), March 21-24, 2011 in Orlando, Florida. The study covers the reliability testing results and demonstrates the stability of the devices at temperature and under radiation exposure.

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Alex Lidow is interviewed by ECN's Editorial Director, Alix Paultre, on the Tinker's Toolbox, ECN's audio interview website.  The interview explores the attributes of GaN technology, applications opened as a result of GaN's superior performance to MOSFETs and reasons for the take-up of eGaN FET products over the past year.

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EL SEGUNDO, Calif. - March 15, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announce the introduction of the EPC2001 and EPC2015, two lead-free, RoHS-compliant (Restriction of Hazardous Substances) enhancement-mode gallium nitride on silicon (eGaN™) FETs.

The EPC2001 FET is a 100 V_DS device with a maximum R_DS(ON) of 7 milliohms with 5 V applied to the gate, and the EPC2015 is a 40 V_DS with a maximum R_DS(ON) of 4 milliohms. Both eGaN FETs provide significant performance advantages over similar state-of-the-art silicon-based power MOSFETs. Both devices have low on resistance, are smaller than silicon devices with similar resistance and have many times superior switching performance.

The eGaN FET is a viable and efficient alternative to standard MOSFET solutions in Power over Ethernet (PoE) applications. These FETs enable higher operating frequencies that can be leveraged into reduced converter size and cost. Both 13W and 26W PoE eGaN FET converters were built and evaluated side by side with standard MOSFET designs. In every instance, eGaN FET converters exhibited higher efficiencies with the potential of reducing system cost over their MOSFET counterparts.

By Johan Strydom, Ph.D., Vice President of Applications, EPC
Michael de Rooij, Ph.D., Director of Applications, EPC
March 1, 2011

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Efficient Power Conversion Corporation (EPC) Market Leading eGaN™ FET Named Finalist in Prestigious 2010 EDN Innovation Awards Competition

EL SEGUNDO, Calif-February 23, 2011 - Efficient Power Conversion Corporation’s EPC1010 enhancement-mode gallium nitride on silicon (eGaN™) power FET has been named a finalist in EDN’s 21st annual Innovation Awards http://innovation.edn.com/) within the Power IC’s category.

我们对功率半导体最基本的要求是性能、可靠性、管控性及成本效益。它的高频率性能，可切合稳压器系统于体积及瞬态响应方面的需要而具更高价值，并为D类功率放大器提供高保真度。一个新器件结构如果不高效、不可靠的话，根本不可能商品化。市场上有很多新结构及原料可选择，但是接受度有限。不过，现在有氮化镓(Gallium Nitride/GaN)增强型功率管控器件问世，具有高导电性、极快开关、硅器件之成本结构及基本操作模式等优异性能，其代表就是宜普公司的新产品。

Stephen Colino, Robert Beach
今日电子
2010年9月

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eGaN FETs differ from silicon MOSFETs in part because of their significantly faster switching speeds. In the second article of this series, we explore the different requirements for gate drive, layout, and thermal management.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
January 1, 2011

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EL SEGUNDO, Calif-January 6, 2011 — Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN™) power FETs have been honored with an Electronic Products’ Product of the Year award.

The editors of Electronic Products — a leading trade publication for electronic design engineers — evaluated thousands of products launched in 2010. The winning products were selected on the basis of innovative design, significant advancement in technology or application and substantial achievement in price and performance. The eGaN FETs demonstrated success in the category of discrete semiconductors.

自2004年GaN HEMT(高电迁移 率晶体管)问世以来，基于GaN材料 的新技术不断涌现，但由于成本偏 高和耗尽型 作的不方便，GaN晶体 管市场接受度一直受限，不过这一 局面有望得到改观。美国宜普公司 最近推出首款增强型硅基GaN功率晶 体管(简称eGaN FET)，可专门用于 替代MOSFET，而且使用标准硅制 造技术和设备，可以低成本大批量 生产。

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EPC, the first company to deliver enhancement mode GaN (eGaN™) FETs to the market, has been recognized by EDN for inclusion on their list of "100 Hot Products for 2010."

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