熱阻是決定離散功率元件性能的主要因素。根據元件的熱特性，可以得出用戶應用的最大功耗和最大電流。《EPC eGaN FET 的熱性能》應用筆記描述了eGaN FET熱阻測量的測試方法和結果。

簡單和具經濟效益的熱管理策略可改善 GaN FET的熱傳導和優化熱性能。《How2AppNote012 - 如何從基於eGaN元件的轉換器獲得更多功率》中分析了從板側和背面冷却的影響。 我們總結如下。

值得注意的是，EPC GaN FET可以利用雙面散熱來最大限度地提高高功率密度設計中的散熱性能。《How2AppNote012 - 如何從基於eGaN元件的轉換器獲得更多功率》對此進行了詳細介紹。

Thermal interface materials (TIM) are a critical part of the cooling system when using top sided cooling. Since GaN devices are very small, effective cooling relies on the heat-spreading effect of the heatsink, however, the TIM layer does not benefit from this. Because of its small area, the TIM layer ends up being a significant contributor to the overall R_th,J-A, and therefore the use of high thermal conductivity materials is very beneficial. The TIM layer also has a very important second role: to electrically isolate the GaN devices from the heatsink since the top of EPC GaN FETs are connected to source potential.

EPC has gathered some information on TIM materials to help designer in their search:

TIM Pads

TIM compound and greases

使用GaN FET熱計算器. The GaN FET Thermal Calculator allows the optimization of the thermal solution once the losses have been determined.

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