雜談GaN技術

近期氮化鎵（GaN）功率元件的進展顯示，其運作範圍已大幅擴展至 40 V 以下的低電壓應用領域。由於具備良好的導通性能、成熟且廣為理解的製造製程，以及經驗證的可靠性，矽 MOSFET 長期以來主導此電壓範圍。

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氮化鎵(GaN)是一種全新的使能技術，可實現更高的效率、顯著減小系統尺寸、更輕和在應用中取得矽元件無法實現的性能。那麽，為什麽關於氮化鎵半導體仍然有如此多的誤解？事實又是怎樣的呢？

這篇文章最初由 John Glaser 博士和 David Reusch 博士於 2016 年 6 月 13 日在 Power Systems Design 網站上發表。

增強型 GaN 功率器件（eGaN® FETs 和 ICs）為用戶提供了區分其最終產品的途徑。這項新技術在支持我們的設備和電子設備的隨處可見的電源供應和輸送電路中顯著提高了效率。

Gallium nitride (GaN) power transistors designed for efficient power conversion have been in production for seven years. New markets, such as light detection and ranging, envelope tracking, and wireless charging, have emerged due to the superior switching speed of GaN. These markets have enabled GaN products to achieve significant volumes, low production costs, and an enviable reliability reputation. All of this provides adequate incentive for the more conservative design engineers in applications such as dc–dc converters, ac–dc converters, and automotive to start their evaluation process. So what are the remaining barriers to the conversion of the US$12 billion silicon power metal–oxide–semiconductor field-effect transistor (MOSFET) market? In a word: confidence. Design engineers, manufacturing engineers, purchasing managers, and senior management all need to be confident that GaN will provide benefits that more than offset the risk of adopting a new technology. Let’s look at three key risk factors: supply chain risk, cost risk, and reliability risk.