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Forecasting System Reliability in Real-World Mission Profiles in EPC’s Phase 16 Report on GaN Reliability

Forecasting System Reliability in Real-World Mission Profiles in EPC’s Phase 16 Report on GaN Reliability

Efficient Power Conversion (EPC) publishes Phase-16 Reliability Report adding new findings to the extensive knowledge base on GaN reliability and mission robustness.

EL SEGUNDO, Calif.— March 2024 — EPC announces the publication of its Phase-16 Reliability Report, documenting continued work using test-to-fail methodology and adding specific guidelines for overvoltage specifications and improving thermo-mechanical reliability.

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Experts Weigh in on GaN & SiC at APEC 2024

Experts Weigh in on GaN & SiC at APEC 2024

In this video from Power Electronics News, a lineup of distinguished speakers from semiconductor companies shares insights into groundbreaking developments in gallium nitride– and silicon carbide–based power devices.

The GaN speakers address two critical questions shaping the future of wide bandgap:

  1. The significance of substrate material choice for GaN-based power devices. They elaborate on how this choice impacts device performance, reliability and manufacturability and discuss how researchers are tackling substrate-related challenges.
  2. Specific market segments where GaN devices are outperforming traditional silicon-based solutions, driving adoption and revealing the technology direction of their respective companies. The speakers include:
    • Robert Taylor, applications engineer/general manager industrial applications at Texas Instruments
    • Michael de Rooij, VP of applications engineering at EPC
    • Balu Balakrishnan, CEO of Power Integrations

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EPC推出首款具有最低1mOhm導通電阻的GaN FET

EPC推出首款具有最低1mOhm導通電阻的GaN FET

EPC推出採用緊凑型QFN封裝( 3 mm x 5 mm)的100 V、1 mOhm GaN FET (EPC2361),助力DC/DC轉換、快充、馬達控制和太陽能 MPPT等應用實現更高的功率密度。

2024 年 2 月27日 — 全球增强型氮化鎵 (GaN) 功率 FET 和 IC領域的領導者宜普電源轉換公司(EPC)推出 100 V、1 mOhm (EPC2361)。 這是市場上具有最低導通電阻的 GaN FET,與 EPC 的上一代産品相比,功率密度提高了一倍。

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Using GaN FETs with Controllers and Gate Drivers Designed for Silicon MOSFETs

Using GaN FETs with Controllers and Gate Drivers Designed for Silicon MOSFETs

Gallium Nitride (GaN) FETs have revolutionized the power electronics industry, offering advantages such as smaller size, faster switching, higher efficiency, and lower costs compared to traditional silicon MOSFETs. However, the rapid evolution of GaN technology has sometimes outpaced the development of dedicated GaN-specific gate drivers and controllers. Consequently, circuit designers often turn to generic gate drivers designed for silicon MOSFETs, necessitating careful consideration of various factors to ensure optimal performance.

Bodo’s Power Systems
February, 2024
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EPC GaN FET助力DC/DC轉換器實現高功率密度和高效率基準

EPC GaN FET助力DC/DC轉換器實現高功率密度和高效率基準

EPC GaN FET與Analog Devices驅動器和控制器相結合,為客戶簡化氮化鎵基設計、提高其效率、降低散熱成本、助力運算、工業和消費類應用的DC/DC轉換器實現最高功率密度。

宜普電源轉換公司(EPC )宣佈推出採用EPC GaN FET和Analog Devices, Inc.(ADI)控制器的各種参考設計。

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EPC GaN FET可在數奈秒內驅動雷射二極體,實現75~231A脉衝電流、 支援先進的汽車自動化

EPC GaN FET可在數奈秒內驅動雷射二極體,實現75~231A脉衝電流、 支援先進的汽車自動化

宜普電源轉換公司(EPC)推出三款雷射驅動器電路板,這些板採用了符合AEC-Q101認證標準、快速轉換的GaN FET以實現具備卓越性能的光達系統。

EPC推出三款評估板,分別是EPC9179EPC9181EPC9180,它採用75 A、125 A、231 A脉衝電流雷射驅動器和通過車規級AEC-Q101認證的EPC GaN FET - EPC2252EPC2204AEPC2218A。它比前代氮化鎵元件的體積小30%和更具成本效益。這些電路板專為長距離和短距離車載光達系統而設計,通過可選的輸入和輸出值,加快評估氮化鎵基解決方案。

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宜普電源轉換公司將在CES 2024展示基於氮化鎵技術的消費電子應用– 智慧出行、無人機、機器人及其他應用

宜普電源轉換公司將在CES 2024展示基於氮化鎵技術的消費電子應用–  智慧出行、無人機、機器人及其他應用

EPC公司的氮化鎵專家將在國際消費電子展(CES)上分享氮化鎵技術如何增强消費電子產品的功能和性能

增强型氮化鎵(eGaN®)FET和IC領域的全球領導者宜普電源轉換公司(EPC)將在CES 2024展會展示其卓越的氮化鎵技術如何為消費電子產品在功能和性能方面做出貢獻 ,包括實現更高效率、更小尺寸和更低成本的解決方案。

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Advancements in GaN Motor Drive Inverters Revolutionize UAV Drones for Agricultural Applications

Advancements in GaN Motor Drive Inverters Revolutionize UAV Drones for Agricultural Applications

Modern agricultural techniques have been revolutionized by the integration of unmanned aerial- vehicle (UAV) drones, which are low-voltage battery-operated aircrafts. Smaller drones are utilized for terrain mapping and vegetation monitoring, while heavier, more robust variants are employed for tasks such as spraying and distributing fertilizers and insecticides as well as disseminating seeds and feed with payloads up to 50 kg loads. GaN-based inverters prove to be suitable for UAV agricultural drones since they extend the battery life by improving motor efficiency, courtesy of the higher PWM frequency with sinusoidal excitation. In addition to the efficiency considerations, the higher PWM frequency contributes to a reduction in the dimensions of the DC link, thereby reducing the size and weight of the inverter, which is vital in lightweight aircrafts.

Bodo’s Power Systems
December, 2023
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Efficient Energy Technology (EET) 的SolMate選用了EPC氮化鎵元件,使效率倍增和延長了產品使用壽命

Efficient Energy Technology (EET) 的SolMate選用了EPC氮化鎵元件,使效率倍增和延長了產品使用壽命

Efficient Energy Technology GmbH(EET)位於奧地利,是設計和生產創新、用於陽臺的小型發電廠的先驅。EET公司選用了宜普電源轉換公司(EPC)的增强型氮化鎵(eGaN®)功率電晶體(EPC2204), 用於其新型SolMate®綠色太陽能陽臺產品。EPC2204在低RDS(on)和低COSS之間實現了最佳折衷,這對於要求嚴格的硬開關應用至關重要,同時在緊凑的封裝中實現100 V的汲-源擊穿電壓。這種緊凑型設計顯著縮小了PCB的尺寸,保持較小的電流廻路和最大限度地減少EMI。

EET公司結合了EPC的氮化鎵元件和其SolMate MPPT充電轉換器,以實現多種優勢:效率損失半和整體效率從96%提高到98%。轉換器的體積縮減了70%、BOM和製造成本降低了 20%,而且同時降低了對散熱的要求。此外,由於開關頻率提高了10倍,因此無需使用易於引發問題的電解電容器,從而延長了轉換器的使用壽命。

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採用晶片級封裝的氮化鎵元件熱建模

採用晶片級封裝的氮化鎵元件熱建模

與採用傳統矽元件的轉換器相比,採用氮化鎵基高電子遷移率電晶體 (HEMT) 具有許多材料和性能優勢,已廣泛用於消費和工業用功率轉換領域。氮化鎵元件在更高的開關頻率下提高了功率轉換效率,進而實現更低的系統成本和更高的功率密度。隨著功率密度的增加,散熱分析和熱建模變得至關重要。我們將在本文分享EPC的熱量計算器。 EPC公司製造增强型 GaN HEMT 和集成電路,例如支持多種轉換器的半橋元件。

Power Electronics News
2023年11月
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GaN Technology from EPC Space Exhibits Extreme Robustness for Space Missions

GaN Technology from EPC Space Exhibits Extreme Robustness for Space Missions

Space exploration has always demanded cutting-edge technology, reliability, and resilience. The latest breakthrough in power electronics, gallium nitride (GaN) technology, has emerged as a game-changer for space-based systems offering superior radiation tolerance and unmatched electrical performance compared to traditional silicon MOSFETs. In this article, we delve into the reasons why GaN power devices are the ultimate choice for power conversion applications in space and how their resistance to radiation makes them an extremely robust solution for space missions.

Components in Electronics
October 2023
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Using GaN FETs to Burst Through 5 kW/in3 in a 48 V to 12 V LLC Converter

Using GaN FETs to Burst Through 5 kW/in3 in a 48 V to 12 V LLC Converter

LLC resonant converters have emerged as the preferred topology for an intermediate 48 V to 12 V conversion due to their high efficiency, high power density and good dynamic response. The outstanding performance resulting from the combination of this topology with GaN transistors has been demonstrated in the past. This article presents how the newest generation of GaN devices, such as those from EPC, continues to push the envelope even further.

Bodo’s Power Systems
November, 2023
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EPC的100 V GaN FET助力實現更小的電機驅動器, 用於電動自行車、機器人和無人機

EPC的100 V GaN FET助力實現更小的電機驅動器, 用於電動自行車、機器人和無人機

基於氮化鎵元件的EPC9194逆变器参考設計顯着提高了馬達控制系統的效率、扭矩而同时使得單位重量功率(比功率)增加了一倍以上。該逆变器非常微型,可整合到電機外殼中,從而實現最低的電磁干擾、最高的密度和最輕的重量。

宜普電源轉換公司宣佈推出三相BLDC馬達控制逆變器參考設計(EPC9194)。它的工作輸入電源電壓範圍為14V~60V,可提供高達60 Apk(40 ARMS)的輸出電流。此電壓範圍和功率使該解決方案非常適合用於各種三相BLDC馬達控制器,包括電動自行車、電動滑板車、無人機、機器人和直流伺服馬達。

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GaN in Space: Unlocking Efficiency and Performance in Satellite Systems

GaN in Space: Unlocking Efficiency and Performance in Satellite Systems

The space industry is undergoing a transformative shift to “New Space,” driven by the increasing demand for ubiquitous connectivity and the emergence of innovative business models. One of the key elements of this transformation is the adoption of gallium nitride (GaN) technology in space applications. GaN holds immense potential due to its impressive radiation hardness, high system efficiency and lightweight characteristics.

In a discussion with EE Times Europe, Taha Ayari and Aymen Ghorbel, technology and market analysts at Yole Intelligence, part of Yole Group, explained how New Space—the low Earth orbit (LEO) mission segment, with a typical satellite lifespan of three to five years and lower reliability requirements—has become a focal point for GaN adoption. As a result, power GaN devices are being adopted for various satellite systems, including DC/DC converters, point-of-load systems, motor drives and ion thrusters.

EE Times Europe
October 2023
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GaN產業版塊動盪宜普如何越級挑戰?

GaN產業版塊動盪宜普如何越級挑戰?

宜普電源轉換公司聯合創辦人暨執行長Alex Lidow表示,GaN的成本競爭力亦與Si MOSFET並駕齊驅,潛在爆發力更有過之而無不及,目前最關鍵就是得重塑諸多研究者的老舊觀念,認為GaN昂貴到碰不得。GaN的技術正迎來轉捩點,在先進運算、車用電子、太空電子及消費電子等新型應用設計多數採GaN技術,而非Si MOSFET。

DIGITIMES Asia
2023年9月
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宜普拚GaN成本優勢目標超車Si MOSFET

宜普拚GaN成本優勢目標超車Si MOSFET

宜普電源轉換公司聯合創辦人暨執行長Alex Lidow接受DIGITIMES專訪,提到GaN主要會被應用在650V及以下市場。反之碳化矽則是主導650V以上的市場,它可望取代矽基絕緣閘極雙極性電晶體。宜普也在開發對速度及尺寸特性極為要求的400V以下市場。且致力於製造比Si功率元件擁有更高性能、更具成本競爭力的GaN元件。

DIGITIMES Asia
2023年9月
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EPC Space Brings GaN to the Edge of the Atmosphere

EPC Space Brings GaN to the Edge of the Atmosphere

Bringing GaN to the final frontier, EPC Space introduced two new radiation-hardened GaN transistors for high-current switching in space-based applications. As the number of commercial satellites continues to increase, designers require more options for space-ready power electronics with improved current handling.

All About Circuits
September, 2023
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