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Sharge Selects GaN FETs from EPC for High-power USB PD Charger

Sharge Selects GaN FETs from EPC for High-power USB PD Charger

EL SEGUNDO, Calif.—  March 2023 – Efficient Power Conversion (EPC), the world’s leader in enhancement-mode gallium nitride FETs and ICs, has teamed up with SHARGE Technology (SHARGE) to design a 67 W USB PD charger with a power display screen. The Retro 67 fast charger uses EPC’s 100 V GaN FET, EPC2218, which can deliver 231 A pulsed current in a tiny footprint of 3.5 mm x 1.95 mm offering designers a significantly smaller, more efficient device than silicon MOSFET for USB PD fast chargers.

EPC2218 provides SHARGE’s All-GaN fast charger with higher efficiency, state-of-the-art power density and lower system cost.

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Efficient Power Conversion (EPC) Launches 40 V eGaN FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters

Efficient Power Conversion (EPC) Launches 40 V eGaN FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters

EPC introduces the 40 V, 3 milliohm EPC2055 eGaN® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — December 2020 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. 

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EPC eGaN技術在性能及成本上實現質的飛躍

EPC eGaN技術在性能及成本上實現質的飛躍

EPC公司宣佈推出EPC2045及EPC2047氮化鎵場效應電晶體(eGaN®FET),對比前一代的產品,這些電晶體的尺寸減半,而且性能顯著提升。

全球增强型氮化鎵電晶體領袖廠商、致力於開發創新的矽基功率場效應電晶體(eGaN FET)及積體電路的宜普電源轉換公司(EPC)宣佈推出全新的EPC2045 (7 mΩ、100 V)及EPC2047(10 mΩ、200 V)電晶體,在提升產品性能的同時也可以降低成本。100 V的EPC2045應用於開放式服務器架構以實現48 V至負載的單級電源轉換、負載點(POL)轉換器、USB-C及 雷射雷達(LiDAR)等應用。200 V的EPC2047的應用例子包括無綫充電、多級AC/DC電源供電、機械人應用及太陽能微型逆變器

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