EPC2218: 100 V, 231 A Enhancement-Mode GaN Power Transistor

V_DS, 100 V
R_DS(on), 3.2 mΩ
I_D, 60 A
Pulsed I_D, 231 A

Die Size: 3.5 mm x 1.95 mm

Higher Switching Frequency – Lower switching losses and lower drive power
Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint - Higher power density

Status: Active
The GaN Experts recommend EPC2088 for new designs

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EPC90135	80 V, 45 A parallel half-bridge evaluation	$200.00
EPC90123	100 V, 25 A half-bridge evaluation	$200.00
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EPC9153	High efficiency (>98%) 250 W buck converter	$309.96
EPC9157	High power density 300 W ¹⁄₁₆^th brick converter	$378.00
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EPC9166	500 W 12 V input Boost Converter	$300.00
EPC9171	90–265 V_RMS Universal AC Input	$1,440.00

Design Resources