EPC GaN FET與Analog Devices驅動器和控制器相結合，為客戶簡化氮化鎵基設計、提高其效率、降低散熱成本、助力運算、工業和消費類應用的DC/DC轉換器實現最高功率密度。

宜普電源轉換公司（EPC ）宣佈推出採用EPC GaN FET和Analog Devices, Inc.(ADI)控制器的各種参考設計。

宜普電源轉換公司(EPC)和Analog Devices(ADI)公司携手新推的参考設計採用經過全面优化的新型模擬控制器来驅動EPC的氮化鎵場效應電晶體，可實現超過96.5%的效率。

宜普電源轉換公司(EPC)宣佈新推EPC9158，這是一款工作在500 kHz開關頻率的雙輸出同步降壓轉換器参考设计，可將48 V~54 V的輸入電壓轉換為12 V穩壓輸出，可提供高達每相25 A電流或50 A總連續電流。ADI的新型LTC7890同步氮化鎵降壓控制器与EPC的超高效GaN FET相结合，可為高功率密度應用提供佔板面積小且非常高效的解決方案。該解決方案在48 V/12 V 、50 A連續電流下可實現 96.5%的效率。

From Nov. 15 to 18, electronica 2022 will bring the international electronics industry together at the Munich exhibition grounds. Wide Bandgap Semiconductors, Renewable Energies, Smart Grid, and Energy Storage will be the major topics covered by the Power Electronics Forum at electronica 2022. In this podcast, onsemi president and CEO Hassane El-Khoury, Silanna Semiconductor North America CEO Mark Drucker, and of Efficient Power Conversion (EPC) CEO Alex Lidow will introduce the Power Electronics Forum. Interview with Alex Lidow starts at 31:55

EETimes
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New Motor Drive Center of Excellence (CoE) design center in Turin, Italy, to help customers exploit the power of GaN for growing motor drive applications

EL SEGUNDO, Calif.— September, 2022 —   EPC has opened a new design application center near Turin, Italy, to focus on growing motor drive applications based on GaN technology in the e-mobility, robotics, drones, and industrial automation markets.  The specialist team will support customers in accelerating their design cycles and define future Integrated Circuits for power management with state-of-the art equipment to test applications from 400 W to 10’s of kW.

Join host Dr. Sanjay Gupta and guest Alex Lidow, CEO of Efficient Power Conversion – or EPC – in episode 5 as they explore the ways GaN is advancing the future of wireless charging. As wireless power increases in maturity and adoption, the industry needs solutions that improve performance, efficiency, and user experience. Gallium Nitride is essential to enabling higher power applications than can be achieved with traditional silicon, opening the door for charging multiple devices and more diverse devices, such as laptops, drones, robots, power tools, eBikes, and industrial equipment. Wireless charging circuits employing GaN transistors are also five to ten times smaller than silicon devices able to handle the same power levels.

AirFuel Alliance
May, 2022
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Sensitron introduces the SPG025N035P1B GaN half-bridge module using the 350 V EPC2050 eGaN^® FET from Efficient Power Conversion (EPC)

EL SEGUNDO, Calif.— May 2022, Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s 350 V, EPC2050 GaN FET, Sensitron was able to reduce the size of their solution by 60% while also improving the module’s already excellent junction-to-case thermal conduction. The SPG025N035P1B from Sensitron is a high-power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500 khz. Rated at 20 A, the module can be used to control over 3 kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10" x 0.70" x 0.14") allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.