Improving low-voltage DC/DC converter performance with GaN transistors:
The emergence of commercially available and cost-effective gallium nitride (GaN) power transistors begins a new age in power electronics. There are significant benefits in using enhancement-mode gallium nitride FET (eGaN FET) devices in power converters for existing data center and telecommunications architectures centering around an input voltage of 48 VDC with load voltages as low as 1 VDC. High-performance GaN power transistors can enable new approaches to power data center and telecommunications systems with higher efficiency and higher power density than possible with previous Si MOSFET based architectures.

Power Systems Design
David Reusch, Ph.D., and John Glaser, Ph.D.
January, 25, 2016
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DC-DC “brick” converters are familiar to many engineers, and have wide usage in telecommunications, networking, data centers, and many other applications. This is due in large part to adoption of a common footprint defined by the Distributed-power Open Standards Alliance (DOSA) and generally accepted input/output voltage ranges. These converters provide isolation and voltage step-down, and have become increasingly sophisticated, with features that enable advanced system optimization and control.

EDN Network
November 23, 2015
By: John Glaser
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宜普公司的《DC/DC轉換手册》與工程師分享如何在數據通訊設備及其他功率轉換應用中利用氮化鎵（GaN）功率電晶體提高效率及功率密度。

現今世界對訊息的需求史無前例地快速增長，而社會對通訊、計算及下載技術的渴求進一步驅使我們對訊息的需求量上升。新興技術諸如雲端運算及物聯網的出現，加上全球每分鐘估計有高達300小時的錄像被上載至YouTube平臺，可見要求更多、更快速的信息存取的趨勢不會慢下來。這個挑戰推動了我們編撰這本實用工程知識手册--《DC/DC轉換 -《氮化鎵電晶體—高效功率轉換元件》的增刊 》。

本書闡述功率轉換系統如何持續改善，從而跟上正在快速提升的運算能力的發展步伐，以及應對社會對高效數據中心的需求。此外，本書的焦點是如何發揮高效氮化鎵技術並逐步分析如何利用氮化鎵元件設計出高效的功率轉換解決方案。該分析對用於功率轉換系統中的傳統先進矽功率電晶體和氮化鎵電晶體進行比較。

The trend for electronics is to continually push towards miniaturization while increasing performance. With silicon MOSFET technology fast approaching its theoretical limit, enhancement mode gallium nitride (eGaN^®) FETs from EPC have emerged to offer a step change improvement in power FET switching performance, enabling next generation power density possibilities by decreasing size and boosting efficiency. This article will explore the recommended layout techniques required to fully extract the benefits of EPC’s eGaN FETs.

By: Ivan Chan & David Reusch, Ph.D.
EEWeb –Modern Printed Circuits
August, 2015
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