EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN^® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion.

EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET.

專為功率系統設計師而設的EPC2052功率電晶體是一種100 V、13.5 mΩ並採用超小型晶片級封裝的電晶體，可實現74 A脈衝輸出電流。面向48 V-12 V DC/DC功率轉換器，這些新一代氮化鎵場效應電晶體工作在500 kHz頻率下，可實現超過97%的效率。如果工作在1 MHz時，則實現超過96%的效率。

宜普電源轉換公司（EPC）宣佈推出100 V的EPC2052氮化鎵場效應電晶體，其占板面積只是2.25平方毫米、最大導通阻抗(R_DS(on))為13.5 mΩ及脈衝輸出電流高達74 A 以支援高效功率轉換。

New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 V_IN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions.

Power Electronic Tips
March, 2019
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EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.

EL SEGUNDO, Calif. — March 2019 — The EPC team will be delivering eleven technical presentations on gallium nitride (GaN) technology and applications at APEC 2019 in Anaheim, California from March 17^th through the 21^st. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology.

In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
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作為為支持DC/DC、雷射雷達（LiDAR）、無線電源應用等方面不斷擴大的客戶群進行擴展的一部分，宜普電源轉換公司（EPC）擴大了其在亞洲的團隊，增加的新成員將與整個亞太地區21個地區的客戶保持密切聯繫。

2018年11月28日— 為了支援在亞太地區正在加速的銷售增長，宜普電源轉換公司（EPC）宣佈擴大亞太地區的銷售和FAE團隊，以支援其不斷擴大的客戶群，積極獲取全新的業務發展及抓緊全新的市場商機。

Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN^® power transistors and integrated circuits.

EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based power module.

宜普公司的EPC9130五相開發板展示出採用高頻開關eGaN^®功率電晶體、極小型化及增強了效率的電源轉換方案。

宜普電源轉換公司(EPC)的EPC9130開發板是一款48 V轉換至12 V的非隔離穩壓式開發板、具用五個相位、每相具12 A、最大輸出電流為60安培，開發板的輸出功率可以超過700 W。該板具超高功率密度（每立方英寸大於1250 W），其效率高於96%。

During last week's PCIM Europe event in Nuremberg, Germany, direct 48V-to-1V power conversion architectures were a significant topic. “The use of GaN switches in 48V-to-1V direct dc-dc converters can improve system performance by 30%, compared with today’s best silicon-based designs,” commented Alex Lidow, CEO of Efficient Power Conversion.

PowerPulse
May 31, 2017
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資訊的數學基礎始於資訊理論之父Claude Shannon於1948的著作《通信的數學理論》。他把資訊通信簡化為1及0數位，實質上是二進位數字。該理論可以於現實世界中有雜訊的環境下，準確無誤地傳輸數據。Shannon在2016年4月30日本來是他的百年誕辰。

EDN Network
Steve Taranovich
2016年4月16日
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