歡迎您與氮化鎵（GaN）技術專家一起在CES的EPC虛擬展臺中，探索基於更高效、更小尺寸和更低成本的氮化鎵場效應電晶體和積體電路的解決方案，如何增強消費電子產品的功能和性能。

宜普電源轉換公司（EPC）宣佈在1月11日至14日舉行的全數位國際消費電子展（CES）展示其eGaN^®技術如何改變了消費電子應用的遊戲規則，並且提高產品性能，包括全自動駕駛車輛、電動交通運輸、無人機、機器人和48 V電源轉換等應用。

Gallium nitride (GaN) transistors have been in mass production for over 10 years. In their first few years of availability, the fast switching speed of the new devices – up to 10 times faster than the venerable Si MOSFET – was the main reason for designers to use GaN FETs. As the pricing of GaN devices normalized with the MOSFET, coupled with the expansion of a broad range of devices with different voltage ratings and power handling capabilities, much wider acceptance was realized in mainstream applications such as DC-DC converters for computers, motor drives for robots, and e-mobility bikes and scooters. The experience gained from the early adopters has led the way for later entrants into the GaN world get into production faster. This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their GaN-based designs at the lowest cost. The three topics are: (1) layout considerations; (2) thermal design for maximum power handling; and, (3) EMI reduction techniques for lowest cost.

Bodo’s Power Systems
January, 2021
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Brushless DC (BLDC) motors are a popular choice and are finding increasing application in robotics, drones, electric bicycles, and electric scooters. All these applications are particularly sensitive to size, weight, cost, and efficiency. A monolithically integrated GaN power stage is demonstrated powering a 400 W capable BLDC motor with low switching losses and significant savings in size and weight.

Power Electronics Europe
May, 2020
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