With the power architecture transition from a 12 V to a 48 V bus power distribution in modern data centers, there is an increased demand to improve 48 V power conversion efficiency and power density. In this context, DC-DC converters designed using eGaN^® FETs and ICs provide a high efficiency and high power density solution. Additionally, with the advent of 48 V power systems in mild-hybrid, hybrid and plug-in hybrid electric vehicles, GaN transistors can provide a reduction in size, weight, and Bill of Materials (BOM) cost.

Power Systems Design
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在48 V总线架构出现后，我们可采用全新、基于氮化镓（GaN）晶体管的混合式转换器，以实现超过95%峰值效率及225 W/in³ 功率密度。对于节能的数据中心来说，轻负载效率非常重要。基于氮化镓晶体管的转换器在转换至20%负载时，可保持高于90%的效率。

PowerPulse
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工研院举办无线电能传输研讨会，邀请了来自AirFuel 无线充电联盟、宜普电源转换公司（EPC）、jjPLUS和IHS Markit的业界领袖进行专家演讲。

2018年10月30日 - 人们对5G、笔记本电脑、机器人、机械工具和医疗设备等新应用的中高功率无线充电（WPT）需求不断增加，无线电力的下一个杀手级应用将会是什么?

为了解答这个问题并旨在推动基于高效无线充电标准的产业发展，台湾工业技术研究院ITRI的区域与两岸工作小组、AirFuel无线充电联盟、宜普电源转换公司（EPC）和jjPLUS公司携手支持首届“无线电能传输（WPT）结合5G新应用研讨会”。活动于2018年10月30日（星期二）在台北的国立台湾大学博理館演讲厅举行。

在此播客，我们跟宜普电源转换公司（EPC）的Alex Lidow谈论关于应用于车联网的氮化镓（GaN）技术。

Power Systems Design

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专为高效电源转换而设的氮化镓功率晶体管已经投产7年多了。全新的市场例如激光雷达、包络跟踪及无线电源，都成为氮化镓的新兴市场，因为氮化镓具备超高速的的开关速度。这些市场使得氮化镓产品得以量产、成本更低及具备优越的可靠性。这些优势为比较保守的设计工程师提供更大的利好条件，因此，DC/DC转换器工程师、AC/DC转换器及车载应用工程师都开始对氮化镓器件进行评估。要把120亿美元的硅基MOSFET市场转为氮化镓市场，还有什么壁垒呢？就是信心的问题。设计工程师、制造工程师、采购经理及管理层都必需对氮化镓技术的优势有足够的信心、相信氮化镓技术可以解决设计师对采用全新技术的风险的疑问。让我们看看3个主要构成风险的因素：供应链、成本及产品的可靠性。

IEEE Spectrum
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当全自动汽车及电力推进系统成为车载应用发展的推动力，在硅衬底上生成氮化镓的功率器件的庞大新兴市场正逐渐崛起。

Design World
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从2010年开始，自硅基氮化镓（GaN）晶体管商用化后，低压氮化镓晶体管推动了很多全新应用的发展。氮化镓器件具备超快速开关，推动全新市场诸如激光雷达、包络跟踪及无线电源市场的出现。这些全新应用进一步实现更强大的供应链、低制造成本及器件前所未有的高可靠性。这些优势使得比较保守的设计工程师在DC/DC转换器、AC/DC转换器及车载等各种应用开始对氮化镓器件进行评估。在本文章系列，我们将讨论多种发挥氮化镓器件优势的应用，实现最终产品差异化的竞争优势。首先，我们会探讨是什么因素加快了氮化镓器件的普及。

Power Systems Design
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Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization.

EL SEGUNDO, Calif. – September 2018 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication by the Institution of Engineering and Technology of Characterization of Wide Bandgap Power Semiconductor Devices co-authored by EPC Senior Applications Engineer, Dr. Edward A. Jones. This textbook provides essential tools to assist researchers, advanced students, and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications and includes examples of applying the described methodology.

宜普电源转换公司（EPC）的两个车规级氮化镓晶体管（EPC2202及EPC2203）成功通过了国际汽车电子协会所制定的AEC Q101分立器件应力测试认证，推动一系列面向车用及其它严峻环境的应用的发展。

宜普电源转换公司（EPC）的第一批通过国际汽车电子协会所制定的AEC Q101分立器件应力测试认证的氮化镓场效应晶体管（EPC2202及EPC2203），荣获《今日电子》杂志与21IC中国电子网颁发2018年度“Top-10电源产品奖—技术突破奖”。该奖项在2018年9月13日于北京举行的21iC电源技术研讨会上颁发。

专为功率系统设计师而设的EPC2051功率晶体管是一种100 V、25 mΩ并采用超小型芯片级封装的晶体管，可实现37 A脉冲输出电流。EPC2051是多种应用的理想器件，包括48 V功率转换器、激光雷达及LED照明等应用。

宜普电源转换公司（EPC）宣布推出100 V的EPC2051氮化镓场效应晶体管，其占板面积只是1.1平方毫米、最大导通阻抗(R_DS(on)))为25 mΩ及脉冲输出电流高达37 A 以支持高效功率转换。

Spirit公司的Marti McCurdy及EPC公司首席执行官Alex Lidow分享氮化镓器件如何在性能及成本方面比硅器件优越，以及分享全球领导厂商如何与EPC公司合作，利用氮化镓器件的优势，开发出他们新一代的技术。

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eGaN FET（及目前的集成电路）之可以应用于全自动车辆的激光雷达系统，以及全自动电动赛车，是因为这些器件可以实现高很多的分辨率（由于具备超短激光脉冲）、更快速的图像速度（由于短激光脉冲），及可以准确地看得更远（由于在超高电流时可以实现快速激光脉冲）。

Planet Analog
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硅基增强型氮化镓场效应晶体管及集成电路的领先供应商宜普电源转换公司（EPC）于中国上海与功率管理工程师会面并讨论关于1）针对大于30 W功率高度谐振无线功率接收器、内建同步整流FET的E类整流器； 及2）采用eGaN^® FET、120 A、少于10纳秒脉冲及占板面积小于3平方厘米的千瓦级激光驱动器。

我们诚挚邀请工程师莅临中国上海，出席我们于2018年6月26日（星期二）上午10时至10时50分、在1099号国展路上海世博展览馆1层2号展馆内举行的PCIM Asia 2018研讨会（电力转换与智能运动研讨会）的演讲。

For LiDAR systems to meet ever-higher performance specs, they must perform fast switching of high-current pulses, which is where a gallium-nitride power switch can step in to help.

Electronic Design
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LIDAR is presently a subject of great interest, primarily due to its widespread adoption in autonomous navigation systems for vehicles, robots, drones, and other mobile machines. eGaN devices are one of the main factors in making affordable, high performance LIDAR possible in a small form factor thus further fueling the LIDAR revolution.

EDN
By John Glaser
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In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs.

Power Systems Designs
By Edward A. Jones, Michael de Rooij, and David Reusch
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As GaN-on-Si becomes more common in DC-DC converter designs, questions often arise from experienced designers about the impact of the unique characteristics of GaN transistors when used as synchronous rectifiers (SRs). In particular, the third quadrant off-state characteristics, better known as “body diode” conduction in Si MOSFETs, which is activated during converter dead-time, is of interest. For this article, the focus will be on the similarities and differences of Si MOSFETs and eGaN^® FETs when operated as a “body diode” and outline their relative advantages and disadvantages.

Bodo’s Power Systems
By David Reusch & John Glaser
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AirFuel联盟公司会员jjPLUS与EPC公司携手为工程师演示如何依据最先进的AirFuel™共振标准，设计大面积无线供电桌面，从而实现无线供电家居及办公室！

先进无线通信及嵌入式无线电源解决方案的设计生产商捷佳科技股份有限公司(jjPlus)将于台北国际电脑展的InnoVEX 2018新创特展，展示新一代磁共振无线电源传输（WPT）技术。作为jjPLUS公司的技术合作伙伴EPC公司将在6月6日至8日携手参展，于TWTC的3号馆、展览摊位G0309a与工程师会面。jjPLUS与EPC公司皆是AirFuel联盟的工作委员会会员，也同时于2018年3月在深圳首次举行的AirFuel无线充电大会暨开发者论坛演讲。

Superior characteristics of eGaN^® FETs and integrated circuits, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, AirFuel™ wireless power transfer systems.

EL SEGUNDO, Calif.— May 2018 — Efficient Power Conversion Corporation (EPC) today announces the availability of a complete class 4 wireless power kit, the EPC9129. The system can transmit up to 33 W while operating at 6.78 MHz (the lowest ISM band). The kit comes complete with two receivers, each with a regulated output − one capable of 5 W capable and a second capable of delivering 27 W at 19 V.

Spirit Electronics now provides distribution support to assist customers in adopting eGaN^® FETs and ICs for leading-edge power conversion systems in the defense and aerospace market.

EL SEGUNDO, Calif.— May 2018 — To support its accelerating growth in the defense and aerospace markets, Efficient Power Conversion Corporation (EPC) is proud to announce the appointment of Spirit Electronics as a distribution partner focusing on these key market segments.  Spirit Electronics, in operation since 1979 and located in Phoenix, Arizona and Irvine, California, supplies products and services to the Department of Defense, aerospace, and telecommunication industries.