新製品発表、アプリケーション関連情報など、EPCからの最新ニュースと最新情報を得るために、今、登録してください。 EPCからの電子メール配信に登録する
For the past three decades, Silicon-based power management efficiency and cost have shown steady improvement. In the last few years, however, the rate of improvement has slowed as the Silicon power MOSFET has asymptotically approached its theoretical bounds. Gallium Nitride grown on top of a silicon substrate could displace Silicon across a significant portion of the power management market.
By Alex Lidow, PhD
Power Electronics Europe
Issue 2, 2010
Read the article
続きを読む
A startup led by chip veteran Alex Lidow has officially announced its formation, disclosed its supply-chain partners and unveiled its first products in the emerging gallium nitride (GaN) arena.
By Mark LaPedus
EE Times
March 8, 2010
Read the article
続きを読む
The enhancement mode -normally OFF- GaN technology was explicitly developed to replace power MOSFETs. Says Alex Lidow, EPC’s co-founder and CEO, enhancement mode - rather than depletion mode - is essential for GaN to become a broad-scale silicon power MOSFET replacement.
By Margery Conner
EDN
March 5, 2010
Read the article
続きを読む
A breakthrough in processing gallium nitride (GaN) on a silicon substrate has produced enhancement-mode FETs with high conductivity and hyperfast switching. Its cost structure and fundamental operating mechanism are similar to silicon-only MOSFET alternate.
Article By Sam Davis, Editor in Chief
Power Electronics Technology
March 1, 2010
Read the article
続きを読む