宜普電源轉換公司(EPC)推出200 V、10 mΩ的EPC2307，完善了額定電壓為 100 V、150 V和200 V的6個GaN電晶體系列，提供更高的性能、更小的解決方案和易於設計的DC/DC轉換、AC/DC SMPS和充電器、太陽能優化器和微型逆變器，以及馬達控制器。

全球增强型氮化鎵FET和IC領導者EPC推出 200 V、10 mΩ的EPC2307，採用耐熱增强型QFN封裝，佔位面積僅為3 mm x 5 mm。

An exploration of a GaN-based design of a 2 kW 48V/12V bi-directional power module for 48 V mild hybrid electric vehicles.

Electronics Today
January, 2023
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This panel discussion from Electronica 2022 discusses the benefits and challenges for SiC and GaN in multiple application contexts, as well as the last barriers to overcome for widespread adoption, such as large-volume capabilities and prices.

Power Electronic News
January, 2023
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EPC推出80 V、通過AEC-Q101 認證的氮化鎵場效應電晶體（GaN FET）EPC2252，為設計人員提供比矽MOSFET更小和更高效的解決方案，用於車規級光達、48 V/12 V DC/DC轉換和低電感馬達控制器。

作為增强型氮化鎵 (eGaN^®)FET和IC的全球領導者，宜普電源轉換公司（EPC）進一步擴大已有現貨供應的車規級氮化鎵電晶體系列，推出80 V、11 mΩ、在 1.5 mm x 1.5 mm封裝內提供75 A脉衝電流的EPC2252，比矽MOSFET更小和更高效，適用於自動駕駛和其他先進駕駛輔助系統應用中的車規級光達、48 V/12 V DC/DC轉換和低電感馬達控制器。

Aiming at laser time-of-flight lidar, Efficient Power Conversion (EPC) has introduced an 80V 15A pulse laser driver IC.

Electronics Weekly
January, 2023
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宜普電源轉換公司(EPC)推出新型氮化鎵積體電路EPC21701，這是一款 80 V雷射驅動器IC，可提供15 A脉衝電流，適用於飛行時間(ToF)光達應用，包括真空吸塵器、機器人、3D安全攝像頭和 3D感測器。

EPC 宣佈推出EPC21701，這是一款單晶片雷射驅動器，包含80 V、40 A FET、閘極驅動器和3.3邏輯電平輸入，用於飛行時間光達系統，包括用於機器人、監控系統和真空吸塵器。 它專為用於手勢識別、飛行時間 (ToF)測量、機器人視覺或工業安全的光達系統量身定制。

宜普電源轉換公司（EPC）和立錡科技（Richtek）携手推出新型快充參考設計，使用RT6190降壓-升壓控制器和氮化鎵場效應電晶體EPC2204，可實現超過98%的效率。

宜普電源轉換公司和立錡科技宣佈推出4開關雙向降壓-升壓控制器參考設計，可將12 V~24 V的輸入電壓轉換爲5 V~20 V的穩壓輸出電壓，並提供高達5 A的連續電流和6.5 A的最大電流。與高功率密度應用的傳統解決方案相比，新型RT6190控制器與EPC的超高效氮化鎵場效應電晶體EPC2204相結合，使得解決方案尺寸可縮小20%以上，而且在20 V和12 V輸出電壓下，可實現超過98%的效率。在不需使用散熱器和5 A連續電流下，20 V轉5 V的最大升溫低於攝氏15度，而12 V轉20 V的最高升溫則低於·攝氏55度。

Richtek, the global leading analog IC design company has teamed up with EPC, the leading provider of gallium nitride (GaN)-based power management technology to launch a new reference design for fast charging applications, achieving high power density and up to 98% efficiency.

DigiTimes
January, 2023
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Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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Efficient Power Conversion (EPC) introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs offering higher performance and smaller solution size and cost for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— December 2022 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.

Despite the continued progress in traditional transistor scaling, the semiconductor industry has reached an inflection point. The demand for faster, smaller, smarter, and more energy-efficient chips calls for new design and manufacturing paradigms. This eBook includes contributions from technology and market experts Malcolm Penn, Future Horizons; Tim Burgess and Bernd Westhoff, Renesas Electronics; Jean-Christophe Eloy, Yole Group; Luc Van den hove, imec; Ezgi Dogmus, Poshun Chiu, and Taha Ayari, Yole Intelligence; Alex Lidow, Efficient Power Conversion; Victor Veliadis, PowerAmerica; Richard Collins and Yu-Han Chang, IDTechEx; and Jean-René Lèquepeys, CEA-Leti.

EETimes
December, 2022
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Growing computational power and miniaturization of electronics in computing and data centers is increasingly putting pressure on 48-V power delivery and conversion systems. High-efficiency and high-power–density converters enable a reduction in power losses at the system level while allowing smaller form factors. In this context, LLC resonant topologies combined with GaN technology succeed to deliver outstanding performance, as it has been demonstrated with multiple examples. This article will show the key design parameters and components to achieve beyond 4 kW/in3 of power density in a 48-V to 12-V LLC converter using eGaN^® FETs.

Power Electronics News
December, 2022
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EPC introduces two new 80 V AEC-Q101 qualified GaN FETs, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive 48 V- 12 V DC-DC conversion, infotainment, and lidar for autonomous driving.

EL SEGUNDO, Calif. — November 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN^®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 mm footprint, offering designers significantly smaller and more efficient devices than silicon MOSFETs for automotive DC-DC for 48V-12V conversion, infotainment, and lidar for autonomous driving.

宜普電源轉換公司（EPC） 與世界先進積體電路股份有限公司（VIS） 攜手合作生產八吋氮化鎵晶圓，透過VIS高品質的製造能力，進一步强化EPC在氮化鎵功率轉換市場的領導地位。

發佈單位：宜普電源轉換公司、世界先進公司

發佈日期：111年12月6日

Continue the conversation with Guy Moxey and EPC CEO and Co-Founder Alex Lidow as they explore how GaN and Wolfspeed Silicon Carbide are changing the way we live, and where the future of these technologies could take us.

Wolfspeed
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This paper deals with the application of the latest generation low voltage (up to 80 V) Gallium Nitride (GaN) devices for motor drive applications in the field of electric micro-mobility. A two-level inverter topology oriented to light electric traction (such as electric scooters) with a power rate of 1500 W has been considered. An experimental board using two GaN FETs in parallel connection for each switch of an inverter leg has been arranged. The intrinsic parameters spread of the device, as well as the leakage inductances of both the circuit and the PCB, to evaluate the impact on the current share during both the transient phase and in the steady state have been investigated. In the paper, several simulation runs have been carried out and described. Furthermore, the inverter experimental board has been used to evaluate the phase voltages and currents at different load conditions. Finally, the temperature limits versus phase current variation have been evaluated.

IEEE 2022 AEIT International Annual Conference (AEIT)
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In this interview from electronica 2022, Alex Lidow talks about technology during these 50 years of EE Times, the next challenges for our industry, and the growth of GaN. “Below 650 volts, where the MOSFET is dominant that will be written over by GaN”.

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GaN power devices should be the ideal choice for power conversion applications in space because they are more robust than rad hard MOSFETs when exposed to various forms of radiation. The electrical and thermal performance of GaN has also demonstrated superior operation in a space environment. In this podcast, Bel Lazar, Chief Executive Officer of EPC Space, will analyze the importance of GaN for the space industry. In addition to his role as CEO of EPC Space, Bel currently serves as COO of Efficient Power Conversion (EPC).

EETimes
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In this article EPC explains the improved performance in their Gen 6 GaN FETs and how the resulting devices can achieve the same R_DS(on) as previous generation devices in die that are half the size.

How2Power
November, 2022
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Efficient Power Conversion (EPC) introduces the 80 V, 4 mOhm EPC2619 GaN FET in tiny 1.5 mm x 2.5 mm footprint, offering higher performance and smaller solution size than traditional MOSFETs for high power density applications, including DC-DC conversion, motor drives, and synchronous rectification for 12 V – 20 V.

EL SEGUNDO, Calif.— November 2022 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 80 V, 4 mOhm EPC2619. This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC’s prior-generation products.