Bringing GaN to the final frontier, EPC Space introduced two new radiation-hardened GaN transistors for high-current switching in space-based applications. As the number of commercial satellites continues to increase, designers require more options for space-ready power electronics with improved current handling.

All About Circuits
September, 2023
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As more processing power and more complex loads are placed on-orbit or into deep space missions, it is sometime necessary to parallel two or more power switches. However, conventional power device packages, such as the FSMD-A/B/C/D and their I/O pad provisioning make it difficult to accomplish paralleling these devices in a performance-conscious manner. When paralleled, the gate and source-sense pads on these packages either serve to block the most efficient/shortest interconnect from package-to-package for the drain and source connections or for the gate and source-sense pads. So in parallel configurations, there is always a compromise between optimized drain-source load-circuit performance and gate-source-sense drive-loop performance. This article introduces the FSMD-G discrete HEMT package and explains how the reconfiguration of its I/O pads overcomes these limitations when paralleling GaN HEMTs.

How2Power
September, 2023
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EPC Space has introduced radiation-hardened gallium nitride devices for space-borne power converters and other rugged environments.

Electronics Weekly
August, 2023
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GaN devices offer a plethora of benefits that align well with the demands of the space industry, addressing challenges related to reliability, radiation survivability, and space heritage.

Power Electronics News
August, 2023
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Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new 40 V devices rated at 62 A and 250 A to address critical spaceborne and other high-reliability applications.

EL SEGUNDO, Calif.— July 2023 — EPC announces the introduction of two new 40 V rated radiation-hardened GaN FETs.EPC7001 is a 40 V, 4 mΩ, 250 A_Pulsed, rad-hard GaN FET in a small 7 mm² footprint. EPC7002 is a 40 V, 14.5 mΩ, 62 A_Pulsed, rad-hard GaN FET in a tiny 1.87 mm² footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm² with V_DS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package.  Packaged versions are available from EPC Space.

In this episode of Spirit: Behind the Screen, Spirit Electronics CEO Marti McCurdy chats with EPC’s CEO Alex Lidow and Marketing Director Renee Yawger about the progress of GaN. They discuss GaN’s performance under high radiation as well as the extensive testing, failure modes and device lifespan detailed in EPC’s Phase 15 reliability report. With the full potential of GaN still to be explored and new EPC products releasing frequently, including new half-bridge drivers, low-side drivers and full power stage, GaN is especially useful in New Space and commercial space applications.

Spirit: Behind the Screen
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Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new devices rated at 100 V and 200 V to address a multitude of critical spaceborne and other high-reliability .

EL SEGUNDO, Calif.— April 2023 — EPC announces the introduction of two new radiation-hardened GaN FETs. The EPC7020 is a 200 V, 11 mΩ, 170 A_Pulsed, rad-hard GaN FET in a small 12 mm² footprint. The EPC7003 is a 100 V, 30 mΩ, 42 A_Pulsed, rad-hard GaN FET in a tiny 1.87 mm² footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm² with V_DS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, EPC7019, EPC7014, EPC7004, EPC7018, EPC7007, are offered in a chip-scale package, the same as the commercial eGaN^® FET and IC family.  Packaged versions will be available from EPC Space.

GaN power devices should be the ideal choice for power conversion applications in space because they are more robust than rad hard MOSFETs when exposed to various forms of radiation. The electrical and thermal performance of GaN has also demonstrated superior operation in a space environment. In this podcast, Bel Lazar, Chief Executive Officer of EPC Space, will analyze the importance of GaN for the space industry. In addition to his role as CEO of EPC Space, Bel currently serves as COO of Efficient Power Conversion (EPC).

EETimes
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宜普電源轉換公司(EPC)擴展了其抗輻射氮化鎵產品系列，新推的100 V產品用於要求嚴格的機載和其他高可靠性環境下的電源轉換解決方案，進一步爲這個產品系列添加第五個成員。

EPC公司宣佈推出100 V、7 mΩ、160 A_Pulsed的抗輻射GaN FET EPC7004。尺寸小至6.56 mm²，其總劑量等級大於1 Mrad，綫性能量轉移（LET）的單一事件效應（SEE）抗擾度為85 MeV/(mg/cm²)。EPC7004與EPC7014、EPC7007、EPC7019和EPC7018元件都是採用晶片級封裝，這與其他商用的氮化鎵場效應電晶體（eGaN^® FET）和IC相同。封裝元件將由EPC Space提供。

宜普電源轉換公司(EPC)擴展了其抗輻射氮化鎵產品系列，新推的100 V元件用於要求嚴格的機載和其他高可靠性環境的電源轉換解決方案，與目前市場上的任何100 V耐輻射電晶體相比，它具有最低的導通電阻。

EPC公司宣佈推出100 V、3.9 mΩ、345 A_Pulsed的抗輻射GaN FET EPC7018 r，尺寸爲13.9 mm²，其總劑量等級大於1 Mrad，綫性能量轉移（LET）的單一事件效應（SEE）抗擾度爲85 MeV/(mg/cm²)。與EPC7014、EPC7007和EPC7019耐輻射產品系列相同，都是採用晶片級封裝。封裝元件由EPC Space.提供。

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments with a device that has the lowest on-resistance of any rad hard transistor currently available on the market.

EL SEGUNDO, Calif.— March 2021 — EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 mΩ, 530 A_Pulsed, rad-hard eGaN FET in a small 13.9 mm² footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm²). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family.  Packaged versions will be available from EPC Space.

As the outer reaches of the Earth’s atmosphere and space are opened to commercial development, motors will become increasingly important to systems places there for various functions. With the inevitability of manufacturing in space, motors – including their drivers – will take on even more functions. Of equal importance will be the motor drivers selected to drive those motors efficiently and reliably.

Components in Electronics
October, 2021
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Gallium nitride (GaN) power semiconductors allow for innovation in the harsh radiation environments of space applications.

Electronics Weekly
September, 2021
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Unlike silicon, whereby specific manufacturing processes and packaging are required to insulate semiconductors from the effects of radiation, GaN devices are largely resistant to the damage caused by space radiation due to their physical characteristics and structure. In an interview with Alex Lidow, CEO at EPC, Power Electronic News have discovered the features of GaN for space applications.

Power Electronics News
September, 2021
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航太應用的技術發展是 2021 年的重要組成部份，因此更多的抗輻射元件即將問世。 最近新推兩款新型場效應電晶體，它們給航太領域帶來了甚麽？

All About Circuits
2021 年 6 月
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Gallium nitride power device technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than everachievable before. GaN power devices can also exhibit superior radiation tolerance compared with Silicon MOSFETs depending upon their device design.

Power Electronics Europe
December, 2020
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氮化鎵功率電晶體是面向嚴苛航太任務的功率和射頻應用的理想元件。 通過全新基於eGaN^®元件的解決方案，EPC Space公司提供專門為商業衛星關鍵應用而設計的氮化鎵元件，可確保元件的耐輻射性能和對單粒子效應的免疫能力。 這些元件具有極高的電子遷移率、低溫度系數和非常低的導通阻抗。

EETimes
2020年7月
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針對關鍵航太應用及其他高可靠性應用環境，合資公司EPC Space為客戶提供先進、高可靠性的氮化鎵功率轉換解決方案，從而確保更可靠的操作和任務成功。

宜普電源轉換公司（EPC）與VPT公司（海科航空公司旗下公司、NYSE交易代號為HEI.A及HEI）宣佈成立合資公司EPC Space LLC，針對衛星及高可靠性應用，從事設計和製造抗輻射、採用封裝、通過測試和經認證合格的矽基氮化鎵電晶體和積體電路。

Two space travel related stories hit my desktop this week; one that rapidly generated major international headlines and one that slid very quietly onto my email screen.

The headline-hitter was the successful launch of Elon Musk’s SpaceX rocket with its payload of a Tesla sports car, complete with a dummy driver at the wheel. The second was about Gallium Nitride technology that would be suitable for space applications.

Electro Pages
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SL70040SEH Low Side GaN FET Driver Powers ISL7002xSEH GaN FETs in Launch Vehicle and Satellite Power Supplies

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs that enable primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications. These devices power ferrite switch drivers, motor control driver circuits, heater control modules, embedded command modules, 100V and 28V power conditioning, and redundancy switching systems.

Business Wire
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