氮化鎵技術已經成熟至可以挑戰傳統的矽技術。從2010年起，商用的低壓矽基氮化鎵功率元件實現了很多全新應用。具備高速開關性能的氮化鎵元件也推動了全新市場的出現，例如雷射雷達、波峰追蹤及無線電源市場。這些全新應用有助供應鏈的開發、實現低製造成本及良好的元件可靠性記錄。這一切對於比較保守的DC/DC轉換器、AC/DC轉換器及車載應用的設計工程師來說，是很好的理據，是時候開始對氮化鎵元件進行評了。本文探討加快採納氮化鎵元件的各項因素。

Electronics Weekly
2019年1月
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宜普電源轉換公司（EPC）進一步擴大車規級氮化鎵產品系列 -- 再多兩個產品成功通過國際汽車電子協會所制定的AEC Q101離散式元件應力測試認證。

宜普電源轉換公司（EPC）宣佈再多兩個車用氮化鎵(eGaN)元件成功通過AEC Q101測試認證，可在車用及其他嚴峻環境支持多種全新應用。EPC2206及EPC2212是採用晶圓級晶片規模封裝（WLCS） 、分別是80 V_DS 和100 V_DS的離散電晶體。

EPC公司將於國際消費電子展CES^® 2019 的hospitality suite展示基於氮化鎵（GaN）元件的家居無線電源系統及應用於全自動駕駛車輛的、領先業界的雷射雷達系統。

EPC公司將於2019年1月8日至11日在美國拉斯維加斯舉行的國際消費電子展（CES® 2019）展示eGaN^®技術如何實現兩種改變業界遊戲規則的消費電子應用 -- 分別是無線電源及應用於全自動駕駛車輛的雷射雷達（LiDAR）。

作為為支持DC/DC、雷射雷達（LiDAR）、無線電源應用等方面不斷擴大的客戶群進行擴展的一部分，宜普電源轉換公司（EPC）擴大了其在亞洲的團隊，增加的新成員將與整個亞太地區21個地區的客戶保持密切聯繫。

2018年11月28日— 為了支援在亞太地區正在加速的銷售增長，宜普電源轉換公司（EPC）宣佈擴大亞太地區的銷售和FAE團隊，以支援其不斷擴大的客戶群，積極獲取全新的業務發展及抓緊全新的市場商機。

Last week, Anker debuted a tiny new power brick, crediting its small size with the component it uses instead of silicon: gallium nitride (GaN). It’s the latest example of the growing popularity of this transparent, glass-like material that could one day unseat silicon and cut energy use worldwide.

The Verge
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With the power architecture transition from a 12 V to a 48 V bus power distribution in modern data centers, there is an increased demand to improve 48 V power conversion efficiency and power density. In this context, DC-DC converters designed using eGaN^® FETs and ICs provide a high efficiency and high power density solution. Additionally, with the advent of 48 V power systems in mild-hybrid, hybrid and plug-in hybrid electric vehicles, GaN transistors can provide a reduction in size, weight, and Bill of Materials (BOM) cost.

Power Systems Design
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在48 V匯流排架構出現後，我們可採用全新、基於氮化鎵（GaN）電晶體的混合式轉換器，以實現超過95%峰值效率及225 W/in³ 功率密度。對於節能的數據中心來說，輕負載效率非常重要。基於氮化鎵電晶體的轉換器在轉換至20%負載時，可保持高於90%的效率。

PowerPulse
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在此播客，我們跟宜普電源轉換公司（EPC）的Alex Lidow談論關於應用於聯網汽車的氮化鎵（GaN）技術。

Power Systems Design

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Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization.

EL SEGUNDO, Calif. – September 2018 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication by the Institution of Engineering and Technology of Characterization of Wide Bandgap Power Semiconductor Devices co-authored by EPC Senior Applications Engineer, Dr. Edward A. Jones. This textbook provides essential tools to assist researchers, advanced students, and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications and includes examples of applying the described methodology.

Spirit公司的Marti McCurdy及EPC公司首席執行長Alex Lidow分享氮化鎵元件如何在性能及成本方面比矽元件優越，以及分享全球領導廠商如何與EPC公司合作，利用氮化鎵元件的優勢，開發出他們新一代的技術。

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In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs.

Power Systems Designs
By Edward A. Jones, Michael de Rooij, and David Reusch
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As GaN-on-Si becomes more common in DC-DC converter designs, questions often arise from experienced designers about the impact of the unique characteristics of GaN transistors when used as synchronous rectifiers (SRs). In particular, the third quadrant off-state characteristics, better known as “body diode” conduction in Si MOSFETs, which is activated during converter dead-time, is of interest. For this article, the focus will be on the similarities and differences of Si MOSFETs and eGaN^® FETs when operated as a “body diode” and outline their relative advantages and disadvantages.

Bodo’s Power Systems
By David Reusch & John Glaser
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The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package.  These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives.

EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum R_DS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.

EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size.

EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN^® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and are available in low inductance, extremely small, 2.9 mm x 1.1 mm BGA surface-mount passivated die.

Alex Lidow與他的團隊隊員Michael de Rooij、David Reusch及John Glaser於今天早上的專業研討會上，與專業工程師（PE）分享實用的議題 -- “發揮氮化鎵場效應電晶體及積體電路的最高性能，不僅僅替代MOSFET器件”，使得整個教室被擠得水泄不通。

Planet Analog
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Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN^® power transistors and integrated circuits.

EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based power module.

宜普公司的EPC9130五相開發板展示出採用高頻開關eGaN^®功率電晶體、極小型化及增強了效率的電源轉換方案。

宜普電源轉換公司(EPC)的EPC9130開發板是一款48 V轉換至12 V的非隔離穩壓式開發板、具用五個相位、每相具12 A、最大輸出電流為60安培，開發板的輸出功率可以超過700 W。該板具超高功率密度（每立方英寸大於1250 W），其效率高於96%。

Two space travel related stories hit my desktop this week; one that rapidly generated major international headlines and one that slid very quietly onto my email screen.

The headline-hitter was the successful launch of Elon Musk’s SpaceX rocket with its payload of a Tesla sports car, complete with a dummy driver at the wheel. The second was about Gallium Nitride technology that would be suitable for space applications.

Electro Pages
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SL70040SEH Low Side GaN FET Driver Powers ISL7002xSEH GaN FETs in Launch Vehicle and Satellite Power Supplies

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs that enable primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications. These devices power ferrite switch drivers, motor control driver circuits, heater control modules, embedded command modules, 100V and 28V power conditioning, and redundancy switching systems.

Business Wire
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Developers are hard at work on the machine learning necessary for safer and more-autonomous vehicles. But all the AI in the world won’t be enough if the car relies on inadequate sensors. That was clearly demonstrated in one fatal Tesla crash that occurred in part because the car’s camera didn’t correctly identify an oncoming truck. To ensure smart vehicles have a reliable model of surrounding objects — particularly the ones the cars identify as “threats” — most rely on one or more lidars, or laser-based remote sensors.

Extreme Tech
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