Small satellites bring a more cost-effective approach to low-Earth-orbit (LEO) missions, helping to deliver low-cost internet access across the globe. For this application, GaN FETs partnered with a radiation tolerant pulse width modulation controller and GaN fet driver allow more efficient switching, higher frequency operation, reduced gate drive voltage and smaller solution sizes compared to the traditional silicon counterparts.

Electronics Weekly
July, 2019
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EPC及Spirit Electronics公司攜手為客戶提供領導業界的氮化鎵功率元件的特定製造批次的資料服務。

宜普電源轉換公司（EPC）宣佈與Spirit Electronics公司攜手為客戶提供一系列氮化鎵功率元件的特定批次的數據。

宜普公司首席執行長及共同創辦人Alex Lidow說：「Spirit Electronics具備與國防及宇航客戶的豐富合作經驗，我們攜手為嚴峻應用環境所需，為客戶增值而提供氮化鎵（eGaN）功率半導體的特定批次的資料包。」

目前的氮化鎵場效應電晶體在尺寸及性能方面以飛快的速度發展，而目前為業界樹立基準的氮化鎵元件的性能還可以提升多300倍。

最早採用氮化鎵元件的應用是利用氮化鎵的超快速開關速度，例如面向全自動駕駛車輛和無人機的雷射雷達系統、機械人，以及4G/LTE基站。氮化鎵元件的產量一直在增加，而其價格跟開關速度更慢、尺寸更大型和日益陳舊的MOSFET元件相約。因此，目前正是氮化鎵元件正面攻擊MOSET的時候！。

Bodo’s Power Systems
2019年6月
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EPC proudly announces the induction of Dr. Alex Lidow, CEO and co-founder into the ISPSD Hall of Fame 2019

El Segundo, Calif. – May 2019 – Efficient Power Conversion (EPC) Corporation proudly announces that Dr. Alex Lidow, CEO and co-founder, is inducted into the ISPSD Hall of Fame 2019. This prestigious honor is bestowed upon an honored contributor to advancing power semiconductor technology and sustaining the success of ISPSD. This Hall of Fame award was announced on May 20^th, 2019 at 31^st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2019 at the Marriott Parkview Hotel, Shanghai, China.

eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters.

EDN
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From the heart of Silicon Valley comes a new buzzword. Gallium nitride is the future of power technology. Tech blogs are touting gallium nitride as the silicon of the future, and you are savvy enough to get in on the ground floor. Knowing how important gallium nitride is makes you a smarter, better consumer. You are at the forefront of your peer group because you know of an up and coming technology, and this one goes by the name of gallium nitride.

HACKADAY
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EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.

For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.

Compound Semiconductor
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This year’s PCIM Europe was attended by a record number of visitors, over 12,000. Over half (54%) were from outside Germany. They came to see over 500 exhibitors and while the subject matter was diverse and wide-ranging, there were some themes that emerged. GaN and SiC jostled for attention at this year’s PCIM Europe. Showing the potential that GaN has already realised, Efficient Power Conversion (EPC) had a stand that was well-stocked with examples of the eGaN FET technology that the company introduced in 2009.

Electronic Specifier
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宜普電源轉換公司（EPC）將於歐洲PCIM展會現場演示優越的氮化鎵技術如何提升多種應用所需的電源供電效率，包括運算、通信及運輸行業。

EPC團隊將於5月7日至9日在德國的Nuremberg、歐洲PCIM展覽及研討會的會場，進行7場關於氮化鎵（GaN）技術及應用的演講，並於7號展館、335展覽攤位與工程師會面並分享最新的、基於eGaN^® FET及積體電路的終端客戶產品。

宜普電源轉換公司（EPC）進一步擴大車規級氮化鎵產品系列 -- 全新成員是面向具有高解析度的雷射雷達系統、80 V的EPC2214氮化鎵場效應電晶體，該元件成功通過國際汽車電子協會所制定的AEC Q101應力測試認證。

宜普電源轉換公司（EPC）宣佈再多一個車用氮化鎵(eGaN)元件（80 V的EPC2214）成功通過AEC Q101測試認證，可在車用及其他嚴峻環境支持多種全新應用。

宜普電源轉換公司（EPC）推出兩個全新100 V氮化鎵元件，可以支援伺服器及汽車應用的48 V轉換的要求。 我將在處理器、車用及能量存儲系統等方面探討48 V伺服器的功率轉換解決方案（可參考我的文章 “雙向DC/DC電源供電: 我們應該如何取向？”），未來將在EDN文章中看到。氮化鎵功率電晶體必需是這些不同架構的一部份 -- 我相信沒有其他更優越的元件可以替代氮化鎵元件了 。

Planet Analog
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宜普電源轉換公司的基於氮化鎵的元件乃前沿技術。在本影片，宜普公司的首席執行長Alex Lidow於APEC展會現場與 Alix Paultre分享多個design in項目，從而展示基於氮化鎵的元件的各種優勢。

Embedded Computer Design
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In this episode of PSDtv Alex Lidow, Chief Executive Officer and Co-Founder of Efficient Power Conversion (EPC) is at APEC 2019 in Anaheim and discusses why their GaN on Silicon devices make Silicon now dead.

PSDtv
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EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN^® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion.

EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET.

專為功率系統設計師而設的EPC2052功率電晶體是一種100 V、13.5 mΩ並採用超小型晶片級封裝的電晶體，可實現74 A脈衝輸出電流。面向48 V-12 V DC/DC功率轉換器，這些新一代氮化鎵場效應電晶體工作在500 kHz頻率下，可實現超過97%的效率。如果工作在1 MHz時，則實現超過96%的效率。

宜普電源轉換公司（EPC）宣佈推出100 V的EPC2052氮化鎵場效應電晶體，其占板面積只是2.25平方毫米、最大導通阻抗(R_DS(on))為13.5 mΩ及脈衝輸出電流高達74 A 以支援高效功率轉換。

New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 V_IN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions.

Power Electronic Tips
March, 2019
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EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.

EL SEGUNDO, Calif. — March 2019 — The EPC team will be delivering eleven technical presentations on gallium nitride (GaN) technology and applications at APEC 2019 in Anaheim, California from March 17^th through the 21^st. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology.

In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
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繼第一至第九階段可靠性測試報告後，EPC公司的第十階段可靠性測試報告進一步豐富知識庫。此報告對超過30,000個元件進行了超過1,800萬小時的應力測試後，沒有元件發生故障。在過去的兩年間，我們所付運的數百萬個元件沒有發生現場失效的情況。

宜普電源轉換公司（EPC）發佈第十階段可靠性測試報告，成功通過車規級AEC-Q101應力測試認證。AEC-Q101認證要求功率場效應電晶體符合最高的可靠性標準，不僅僅要求元件符合數據表內所載的條件而沒有發生故障，也同時要求在應力測試中，具有低漂移。請注意，EPC所採用的晶圓級晶片尺寸封裝（WLCSP）也符合所有針對傳統封裝的測試標準，展示出該封裝具備卓越性能之同時沒有影響到元件的穩固性或可靠性。

In this conference GaN market and technology status will be addressed and its future evolution will be debated by mixing visions from designers, manufacturers, and end users.

EL SEGUNDO, Calif. — January 2019 — Efficient Power Conversion (EPC) is joining forces with Yole Développement (Yole) and SEMI to sponsor the first ever ‘GaN Con,’ an industry networking event covering the entire power GaN industry from manufacturers to end users. The theme of GaN Con is “Power GaN: From promises to possible market explosion” and is focused on the emerging GaN market and the state-of-the-art for its underlying technology.